Search

Wei Kin Chan

from Castro Valley, CA
Deceased
Get Report
Related to:
Andrina L GuanChi Chiang Chen, 72Sun Yee Chan, 76Zhu Guan Yu, 56George W Chan, 58Alvin G Chan, 30Jia GuanWeikin ChanWei Q Guan, 59Georgeweising ChanAndrina L GaunQiang K Guan, 57
Connected to:
Adam Chan, 59Adelfa L Chan, 62Adrienne T Chan, 45Agnes Chan, 49Ahdee Q Chan, 58Akiko Chan, 61Alicia P Chan, 44Alison Chan, 86Alissa H Chan, 28Alistair K Chan, 58

Wei Chan Phones & Addresses

  • Castro Valley, CA
  • 2331 Pacifica Ct, San Leandro, CA 94579 (510) 352-2565

Professional Records

Medicine Doctors

Wei Chan Photo 1

Wei Min Chan

View page
Specialties:
Family Medicine
Work:
Caremore Medical Group
406 E Colorado St, Glendale, CA 91205
(818) 844-2778 (phone), (818) 844-2786 (fax)
Languages:
English
Description:
Ms. Chan works in Glendale, CA and specializes in Family Medicine.
Wei Chan Photo 2

Wei Ki Elsie Chan, Oakland CA

View page
Specialties:
Psychologist
Address:
747 52Nd St, Oakland, CA 94609

Resumes

Resumes

Wei Chan Photo 3

Programmer

View page
Industry:
Information Technology And Services
Work:
Uberfusion Sdn Bhd
Programmer
Wei Chan Photo 4

Wei Chan

View page
Wei Chan Photo 5

Licensed Acupuncturist At Wholesome Healing

View page
Location:
United States
Industry:
Alternative Medicine
Wei Chan Photo 6

Wei Chan

View page
Location:
United States
Wei Chan Photo 7

Wei Chan

View page
Location:
San Francisco Bay Area
Industry:
Computer Software
Wei Chan Photo 8

Wei Chan

View page

Publications

Amazon

Aesthetic Plastic Surgery in Asians: Principles and Techniques, Two-Volume Set

View page

Aesthetic Plastic Surgery in Asians: Principles and Techniques offers a comprehensive guide to all aspects of cosmetic surgery in Asians, focusing on the differences in surgical techniques and general principles when treating these patients. With special emphasis on minimally invasive techniques and...
Binding

Hardcover

Pages

1200

Publisher

CRC Press

ISBN #

1482240874

EAN Code

9781482240870

ISBN #

1

Reconstructive Surgery of the Lower Extremity (Two-Volume Set)

View page

This volume represents the state-of-the art in reconstructive surgery of the lower extremity. The editors are assisted by more than 30 well-known experts from major centers in the United States, Asia, and Europe—each revealing new and refined techniques for lower extremity reconstruction. This compr...
Binding

Paperback

Pages

1368

Publisher

CRC Press

ISBN #

1576263207

EAN Code

9781576263204

ISBN #

6

Flaps and Reconstructive Surgery, 1e

View page

Flaps and Reconstructive Surgery, by Drs. Fu-Chan Wei and Samir Mardini, explains how to achieve excellent results while performing all major conventional and perforator flaps used as both pedicled and free flap procedures. Respected microsurgeons from around the world describe how to use these flap...
Author

Fu-Chan Wei MD FACS, Samir Mardini MD

Binding

Hardcover

Pages

624

Publisher

Saunders

ISBN #

0721605192

EAN Code

9780721605197

ISBN #

3

The King of Skittledeedoo

View page

Book by Rust, Patricia / illust.by - San Wei Chan
Author

Patricia Rust

Binding

Hardcover

Pages

32

Publisher

Markowitz Pub

ISBN #

0965589056

EAN Code

9780965589055

ISBN #

7

Microsurgical Reconstruction of the Head and Neck

View page

Book by Peter C. Neligan, Fu-Chan Wei
Author

Peter C. Neligan, Fu-Chan Wei

Binding

Hardcover

Pages

899

Publisher

Quality Medical Pub

ISBN #

1576262693

EAN Code

9781576262696

ISBN #

5

Elementary Chinese

View page
Author

San Wei Chan

Binding

Hardcover

Pages

538

Publisher

Stanford Univ Pr

ISBN #

0804704139

EAN Code

9780804704137

ISBN #

8

Us Patents

Encapsidation Of Heterologous Entities Into Virus-Like Particles

View page
US Patent:
20100167981, Jul 1, 2010
Filed:
Nov 18, 2009
Appl. No.:
12/621416
Inventors:
Bradley C. Bundy - Mountain View CA, US
James R. Swartz - Menlo Park CA, US
Wei Chan - Sunnyvale CA, US
International Classification:
A61K 38/02
C07K 1/02
A61K 31/7088
A61K 31/713
A61K 31/715
US Classification:
514 2, 530338, 514 44 R, 514 44 A, 514 54
Abstract:
Methods are provided for the utilization of bacterial cell-free extracts in the synthesis of high yields of virus like particles with encapsidated cargo.

Methods Of Forming Void And Seam Free Metal Features

View page
US Patent:
20220359279, Nov 10, 2022
Filed:
May 10, 2021
Appl. No.:
17/316649
Inventors:
- Santa Clara CA, US
Mingrui ZHAO - Newark CA, US
Peiqi WANG - Campbell CA, US
Wei Min CHAN - Sunnyvale CA, US
Kai WU - Palo Alto CA, US
Yi LUO - Santa Clara CA, US
Liqi WU - San Jose CA, US
International Classification:
H01L 21/768
C23C 16/455
C23C 16/06
Abstract:
Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

Methods For Low Resistivity And Stress Tungsten Gap Fill

View page
US Patent:
20220336274, Oct 20, 2022
Filed:
Jul 5, 2022
Appl. No.:
17/857341
Inventors:
- Santa Clara CA, US
Kai WU - Palo Alto CA, US
Min HEON - Los Gatos CA, US
Wei Min CHAN - Sunnyvale CA, US
Tom Ho Wing YU - Campbell CA, US
Peiqi WANG - Campbell CA, US
Ju Ik KANG - Seoul, KR
Feihu WANG - San Jose CA, US
Nobuyuki SASAKI - Cupertino CA, US
Chunming ZHOU - Fremont CA, US
International Classification:
H01L 21/768
H01L 21/02
C23C 16/04
Abstract:
Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Methods And Apparatus For Cleaning A Showerhead

View page
US Patent:
20210335586, Oct 28, 2021
Filed:
Apr 22, 2020
Appl. No.:
16/855496
Inventors:
- Santa Clara CA, US
Wei Min CHAN - Sunnyvale CA, US
Peiqi WANG - Campbell CA, US
Kai WU - Palo Alto CA, US
Adolph Miller ALLEN - Oakland CA, US
Kazuya DAITO - Milipitas CA, US
International Classification:
H01J 37/32
B08B 5/00
B08B 7/00
Abstract:
Methods and apparatus for cleaning a showerhead are provided. For example, the methods includes moving a substrate support including a heater disposed therein from a substrate processing position a first distance away from the showerhead to a cleaning position a second distance away from the showerhead, wherein the second distance is less than the first distance; heating the showerhead using the heater disposed in the substrate support to a predetermined temperature; at least one of supplying at least one cleaning gas to the processing chamber to form a plasma or supplying the plasma from a remote plasma source; and providing a predetermined pressure within an inner volume of the processing chamber and maintaining the plasma within the inner volume of the processing chamber while heating the showerhead to the predetermined temperature.

Methods, Apparatuses And Systems For Conductive Film Layer Thickness Measurements

View page
US Patent:
20190390949, Dec 26, 2019
Filed:
Jun 5, 2019
Appl. No.:
16/432104
Inventors:
- Santa Clara CA, US
WEI MIN CHAN - Sunnyvale CA, US
PEIQI WANG - San Jose CA, US
PAUL MA - Santa Clara CA, US
EDWARD BUDIARTO - Fremont CA, US
KUN XU - Sunol CA, US
TODD J. EGAN - Fremont CA, US
International Classification:
G01B 7/06
C23C 16/52
Abstract:
A method and system for determining a thickness of a conductive film layer deposited on a wafer include at two eddy current sensors to take electrical resistivity measurements of the conductive film layer on the wafer as the wafer is being transported by a robot arm, a temperature sensor to determine a temperature change of the wafer during the electrical resistivity measurement, and a processing device to adjust a value of the electrical resistivity measurement by an amount based on the determined temperature change and to determine a thickness of the conductive film layer using the adjusted value of the electrical resistivity measurement and a previously determined correlation between electrical resistivity measurement values and respective thicknesses of conductive film layers. Alternatively, the wafer can be kept at a steady temperature when taking electrical resistivity measurements of the conductive film layer to determine a thickness of the conductive film layer.

A Method And System For High Temperature Clean

View page
US Patent:
20180023193, Jan 25, 2018
Filed:
Jul 19, 2017
Appl. No.:
15/654436
Inventors:
- Santa Clara CA, US
Kalyanjit GHOSH - San Jose CA, US
Mayur G. KULKARNI - Bangalore, IN
Gregory SIU - Saratoga CA, US
Praket P. JHA - San Jose CA, US
Deenesh PADHI - Sunnyvale CA, US
Lei GUO - Santa Clara CA, US
Wei Min CHAN - Sunnyvale CA, US
Ajit BALAKRISHNA - Santa Clara CA, US
International Classification:
C23C 16/44
Abstract:
Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.
Control profile
Wei Kin Chan from Castro Valley, CADeceased Get Report