Wei Kin Chan from 6594 Fox Crest Ln, Lakeland, FL 33813, age 56, Phone: (707) 318-0978

Professional Records

License Records

Wei M Chan

Address:

4670 SW 75 Way, Davie, FL

888 NE 126 SUITE 101, North Miami, FL

Phone:

(786) 210-2583

License #:

9106304 - Expired

Category:

Health Care

Issued Date:

Nov 2, 2011

Effective Date:

Feb 18, 2016

Expiration Date:

Jan 31, 2016

Type:

Physician Assistant

Medicine Doctors

Wei M Chan, North Miami Beach FL

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Specialties:

Physician Assistant (PA)

Address:

100 Nw 170Th St Suite 405, North Miami Beach, FL 33169
(305) 654-5440 (Phone)

Languages:

English

Wei Min Chan

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Specialties:

Family Medicine

Work:

Caremore Medical Group
406 E Colorado St, Glendale, CA 91205
(818) 844-2778 (phone), (818) 844-2786 (fax)

Languages:

English

Description:

Ms. Chan works in Glendale, CA and specializes in Family Medicine.

Wei Min Chan, North Miami Beach FL

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Specialties:

Physician Assistant

Address:

100 Nw 170Th St, North Miami Beach, FL 33169

Wei Ki Elsie Chan, Oakland CA

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Specialties:

Psychologist

Address:

747 52Nd St, Oakland, CA 94609

Resumes

Programmer

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Industry:

Information Technology And Services

Work:

Uberfusion Sdn Bhd
Programmer

Wei Chan

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Licensed Acupuncturist At Wholesome Healing

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Location:

United States

Industry:

Alternative Medicine

Wei Chan

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Location:

United States

Wei Chan

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Business Records

Name / Title

Company / Classification

Phones & Addresses

Wei M. Chan
Physician Assistant

Sussman & Staller, M.D., PA
Medical Doctor's Office

100 NW 170 St, Miami, FL 33169
8095 NW 12 St, Miami, FL 33126
(305) 652-9704

Wei Min Chan
Cardiology

Ronald Lubetsky
Medical Doctor's Office · Internist

100 NW 170 St, Miami, FL 33169
(305) 654-5440

Wei Min Chan
Cardiology, Physician Assistant

Howard Sussman
Medical Doctor's Office

100 NW 170 St, Miami, FL 33169

News

Wimbledon 2015, day three: live - Nick Kyrgios in hot water again, ball boy ...

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Misaki Doi (Jpn) & Stephanie Vogt (Lie) v Johanna Konta (Gbr) & Maria Sanchez (USA) Timea Bacsinszky (Swi) & Chia-Jung Chuang (Tpe) v Mona Barthel (Ger) & Lyudmyla Kichenok (Ukr) Karin Knapp (Ita) & Roberta Vinci (Ita) v Chin-Wei Chan (Tpe) & Nicole Melichar (USA) Karolina Pl

Date

Jul 01, 2015

Category:

Sports

Source:

Google

The changing Chinatowns: Move over Manhattan, Sunset Park now home to most ...

View page "I lived in Chinatown before," said Wei Leng Chan, 60, as he stood smoking a cigarette on Eighth Ave. in Sunset Park one day last month. "But the apartments there are too small and expensive." Sunset Park is now New York's largest Chinatown, ...

Publications

Us Patents

Encapsidation Of Heterologous Entities Into Virus-Like Particles

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US Patent:

20100167981, Jul 1, 2010

Filed:

Nov 18, 2009

Appl. No.:

12/621416

Inventors:

Bradley C. Bundy - Mountain View CA, US
James R. Swartz - Menlo Park CA, US
Wei Chan - Sunnyvale CA, US

International Classification:

A61K 38/02
C07K 1/02
A61K 31/7088
A61K 31/713
A61K 31/715

US Classification:

514 2, 530338, 514 44 R, 514 44 A, 514 54

Abstract:

Methods are provided for the utilization of bacterial cell-free extracts in the synthesis of high yields of virus like particles with encapsidated cargo.

Methods Of Forming Void And Seam Free Metal Features

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US Patent:

20220359279, Nov 10, 2022

Filed:

May 10, 2021

Appl. No.:

17/316649

Inventors:

- Santa Clara CA, US
Mingrui ZHAO - Newark CA, US
Peiqi WANG - Campbell CA, US
Wei Min CHAN - Sunnyvale CA, US
Kai WU - Palo Alto CA, US
Yi LUO - Santa Clara CA, US
Liqi WU - San Jose CA, US

International Classification:

H01L 21/768
C23C 16/455
C23C 16/06

Abstract:

Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

Methods For Low Resistivity And Stress Tungsten Gap Fill

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US Patent:

20220336274, Oct 20, 2022

Filed:

Jul 5, 2022

Appl. No.:

17/857341

Inventors:

- Santa Clara CA, US
Kai WU - Palo Alto CA, US
Min HEON - Los Gatos CA, US
Wei Min CHAN - Sunnyvale CA, US
Tom Ho Wing YU - Campbell CA, US
Peiqi WANG - Campbell CA, US
Ju Ik KANG - Seoul, KR
Feihu WANG - San Jose CA, US
Nobuyuki SASAKI - Cupertino CA, US
Chunming ZHOU - Fremont CA, US

International Classification:

H01L 21/768
H01L 21/02
C23C 16/04

Abstract:

Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Methods And Apparatus For Cleaning A Showerhead

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US Patent:

20210335586, Oct 28, 2021

Filed:

Apr 22, 2020

Appl. No.:

16/855496

Inventors:

- Santa Clara CA, US
Wei Min CHAN - Sunnyvale CA, US
Peiqi WANG - Campbell CA, US
Kai WU - Palo Alto CA, US
Adolph Miller ALLEN - Oakland CA, US
Kazuya DAITO - Milipitas CA, US

International Classification:

H01J 37/32
B08B 5/00
B08B 7/00

Abstract:

Methods and apparatus for cleaning a showerhead are provided. For example, the methods includes moving a substrate support including a heater disposed therein from a substrate processing position a first distance away from the showerhead to a cleaning position a second distance away from the showerhead, wherein the second distance is less than the first distance; heating the showerhead using the heater disposed in the substrate support to a predetermined temperature; at least one of supplying at least one cleaning gas to the processing chamber to form a plasma or supplying the plasma from a remote plasma source; and providing a predetermined pressure within an inner volume of the processing chamber and maintaining the plasma within the inner volume of the processing chamber while heating the showerhead to the predetermined temperature.

Methods, Apparatuses And Systems For Conductive Film Layer Thickness Measurements

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US Patent:

20190390949, Dec 26, 2019

Filed:

Jun 5, 2019

Appl. No.:

16/432104

Inventors:

- Santa Clara CA, US
WEI MIN CHAN - Sunnyvale CA, US
PEIQI WANG - San Jose CA, US
PAUL MA - Santa Clara CA, US
EDWARD BUDIARTO - Fremont CA, US
KUN XU - Sunol CA, US
TODD J. EGAN - Fremont CA, US

International Classification:

G01B 7/06
C23C 16/52

Abstract:

A method and system for determining a thickness of a conductive film layer deposited on a wafer include at two eddy current sensors to take electrical resistivity measurements of the conductive film layer on the wafer as the wafer is being transported by a robot arm, a temperature sensor to determine a temperature change of the wafer during the electrical resistivity measurement, and a processing device to adjust a value of the electrical resistivity measurement by an amount based on the determined temperature change and to determine a thickness of the conductive film layer using the adjusted value of the electrical resistivity measurement and a previously determined correlation between electrical resistivity measurement values and respective thicknesses of conductive film layers. Alternatively, the wafer can be kept at a steady temperature when taking electrical resistivity measurements of the conductive film layer to determine a thickness of the conductive film layer.

A Method And System For High Temperature Clean

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US Patent:

20180023193, Jan 25, 2018

Filed:

Jul 19, 2017

Appl. No.:

15/654436

Inventors:

- Santa Clara CA, US
Kalyanjit GHOSH - San Jose CA, US
Mayur G. KULKARNI - Bangalore, IN
Gregory SIU - Saratoga CA, US
Praket P. JHA - San Jose CA, US
Deenesh PADHI - Sunnyvale CA, US
Lei GUO - Santa Clara CA, US
Wei Min CHAN - Sunnyvale CA, US
Ajit BALAKRISHNA - Santa Clara CA, US

International Classification:

C23C 16/44

Abstract:

Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.

Amazon

Aesthetic Plastic Surgery in Asians: Principles and Techniques, Two-Volume Set

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Aesthetic Plastic Surgery in Asians: Principles and Techniques offers a comprehensive guide to all aspects of cosmetic surgery in Asians, focusing on the differences in surgical techniques and general principles when treating these patients. With special emphasis on minimally invasive techniques and...

Binding

Hardcover

Pages

1200

Publisher

CRC Press

ISBN #

1482240874

EAN Code

9781482240870

ISBN #

Reconstructive Surgery of the Lower Extremity (Two-Volume Set)

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This volume represents the state-of-the art in reconstructive surgery of the lower extremity. The editors are assisted by more than 30 well-known experts from major centers in the United States, Asia, and Europe—each revealing new and refined techniques for lower extremity reconstruction. This compr...

Binding

Paperback

Pages

1368

Publisher

CRC Press

ISBN #

1576263207

EAN Code

9781576263204

ISBN #

Flaps and Reconstructive Surgery, 1e

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Flaps and Reconstructive Surgery, by Drs. Fu-Chan Wei and Samir Mardini, explains how to achieve excellent results while performing all major conventional and perforator flaps used as both pedicled and free flap procedures. Respected microsurgeons from around the world describe how to use these flap...

Author

Fu-Chan Wei MD FACS, Samir Mardini MD

Binding

Hardcover

Pages

624

Publisher

Saunders

ISBN #

0721605192

EAN Code

9780721605197