Jia Quan Li

7235460, Jun 26, 2007

Mar 9, 2001

09/803715

Jia Li - Dallas TX, US

STMicroelectronics, Inc. - Carrollton TX

H01L 21/322

438447, 438218, 438219, 438225, 438298, 438448, 438449, 438451, 257E2902, 257E21545, 257E21551, 257E21558

A process for forming isolation and active regions, wherein the patterning of an oxidation-barrier active stack is performed separately in the PMOS and NMOS regions. After the active stack is in place, two masking steps are used: one exposes the isolation areas on the NMOS side, for stack etch, channel-stop implant, and silicon recess etch (optional); the other masking step is exactly complementary, and performs the analogous operations on the PMOS side. After these two steps are performed (in either order), an additional nitride layer can optionally be deposited and etched to cover the sidewall of the active stack. Field oxide is then formed, and processing then proceeds in conventional fashion.

59091525, Jun 1, 1999

Feb 27, 1998

9/031636

Jia Li - Dallas TX

Texas Instruments Incorporated - Dallas TX

H03B 506
H03B 536

331116FE

A crystal-stabilized integrated-circuit oscillator which uses a filtered analog coupling to automatically disable the bias current to an auxiliary gain after startup. Positive feedback is used to ensure that the switchover is completed once it starts. Thus the device sizes and biases of the primary gain stage can be selected for very low-power operation, while assuring that the oscillator will always start-up whenever poser is valid.