Hua Li from San Jose, CA

Professional Records

Real Estate Brokers

Hua "Maggie" Li, Cupertino CA CA BRE, CPA (Inactive)

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Specialties:

Buyer's Agent
Listing Agent
Investment

Work:

Coldwell Banker
10105 S De Anza Blvd, Cupertino, CA 95014
(650) 533-7351 (Office)

Licenses:

01947004 (CA BRE)
86150 (CPA (Inactive))

Languages:

Cantonese
Mandarin

Links:

Site
LinkedIn

Business Records

Name / Title

Company / Classification

Phones & Addresses

Hua Henry Li

Cal City Investments Inc
Real Estate Agents and Managers

3155 Kearney St Ste 150, Fremont, CA 94538

Hua Li
Owner

Jeelee.com
Farm Supplies

3016 Carey Lane, Suisun City, CA 94512
Website: jeelee.com

Hua Li
Professional Engineer

Intel Corp
Office Machines

8674 Thornton Ave, Newark, CA 94560

Hua Henry Li

Cal City Investments Inc
Real Estate Agents and Managers

3155 Kearney St Ste 150, Fremont, CA 94538

Hua Li
Owner

Jeelee.com
Farm Supplies

3016 Carey Lane, Suisun City, CA 94512
Website: jeelee.com

Hua Li
Professional Engineer

Intel Corp
Office Machines

8674 Thornton Ave, Newark, CA 94560

Hua Li
Managing

Esnova LLC
Consulting Services · Engineering Services · Nonclassifiable Establishments

109 Hilary Ave, Mountain View, CA 94040

Hua Li
Professional Engineer

Intel Corp
Office Machinery Manufacturing

8674 Thornton Ave, Newark, CA 94560
(510) 578-5600

Hua Li

Cal City Investments Inc
Real Estate · Mortgage Broker · Real Estate Agents

3155 Kearney St #150, Fremont, CA 94538
(510) 623-8800

Hua Li
President

SIHA INTERNATIONAL USA LIMITED

Method And Apparatus For Suppressing Stimulated Brillouin Scattering In Fiber Links

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US Patent:

6661814, Dec 9, 2003

Filed:

Dec 31, 2002

Appl. No.:

10/335628

Inventors:

William B. Chapman - Sunnyvale CA
Andrew Daiber - Palo Alto CA
Hua Li - Fremont CA
Mark McDonald - Milpitis CA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01S 330

US Classification:

372 6, 372 9, 372 28, 372 92, 385 15, 385 24, 385 39, 359110

Abstract:

Method and apparatus for producing a laser output having stimulated Brillouin scattering (SBS) suppression characteristics. An excitation signal is provided to an optical path length adjustment element in an external cavity laser to modulate the optical path length of the cavity. This produces a laser output having a wavelength modulation frequency and line width that are a function of the frequency and amplitude of the excitation signal. Under appropriate modulation frequency and line width combinations, the laser output comprises an optical signal with SBS suppression characteristics, thus enabling a higher power signal to be launched into a fiber link since the SBS suppression characteristics raise the SBS threshold of the link. The optical path length modulation also produces an intensity (amplitude) modulation in the laser output. A detector is employed to produce a feedback signal indicative of the intensity modulation that is used for tuning the laser in accordance with a wavelength locking servo loop.

Tunable External Cavity Laser

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US Patent:

6704332, Mar 9, 2004

Filed:

Mar 15, 2002

Appl. No.:

10/099730

Inventors:

William B. Chapman - Sunnyvale CA
Alejandro Farinas - Mountain View CA
Carter Hand - Los Altos CA
Hua Li - San Jose CA
Andrew Daiber - Palo Alto CA
Nadim Maluf - Los Altos CA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01S 310

US Classification:

372 20

Abstract:

External cavity lasers apparatus and methods that allow fast tuning, high wavelength stability, low cavity losses, and form factors that are comparable to solid state, fixed wavelength lasers. The apparatus comprise a gain medium emitting a light beam, a tunable wavelength selection element positioned in the light beam and configured feed back light of a selected wavelength to the gain medium, and a microelectromechanical systems (MEMS) actuator element operatively coupled to the tunable wavelength selection element. The MEMS actuator element may be configured to actuate the tunable wavelength selection element according to a first degree of freedom to select the wavelength of the feedback to the gain medium, and to actuate the actuate the tunable wavelength selection element according to a second degree of freedom to provide phase control of the feedback. The MEMS actuator element and tunable wavelength selection element may additionally be configured such that actuation of the tunable wavelength selection element with respect to a third degree of freedom provides a selectable level of attenuation of the feedback to the gain medium.

Evaluation And Adjustment Of Laser Losses According To Voltage Across Gain Medium

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US Patent:

6804278, Oct 12, 2004

Filed:

Jul 6, 2001

Appl. No.:

09/900426

Inventors:

Andrew Daiber - Palo Alto CA
Hua Li - San Jose CA
William B. Chapman - Sunnyvale CA
Mark McDonald - Milpitas CA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01S 300

US Classification:

372 3801, 372 2901

Abstract:

Systems and methods for probing or evaluating optical loss characteristics associated with lasers by monitoring voltage across a laser gain medium, and a laser and method of laser operation wherein intra-cavity losses are determined by monitoring voltage across a gain medium and wherein the cavity loss profile is adjusted according to the voltage across the gain medium.

Quantum Dot Lasers

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US Patent:

6816525, Nov 9, 2004

Filed:

Oct 5, 2001

Appl. No.:

09/972303

Inventors:

Andreas Stintz - Albuquerque NM, 87110
Petros M. Varangis - Albuquerque NM, 87120
Kevin J. Malloy - Albuquerque NM, 87109-6304
Luke Lester - Albuquerque NM, 87122
Timothy C. Newell - Albuquerque NM, 87108
Hua Li - San Jose CA, 95132

International Classification:

H01S 534

US Classification:

372 45

Abstract:

A quantum dot active region is disclosed in which quantum dot layers are formed using a self-assembled growth technique. In one embodiment, growth parameters are selected to control the dot density and dot size distribution to achieve desired optical gain spectrum characteristics. In one embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In another embodiment, the optical gain is selected to increase the saturated ground state gain for wavelengths of 1260 nanometers and greater. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.

External Cavity Laser Apparatus With Orthogonal Tuning Of Laser Wavelength And Cavity Optical Pathlength

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US Patent:

6901088, May 31, 2005

Filed:

Jul 6, 2001

Appl. No.:

09/900373

Inventors:

Hua Li - San Jose CA, US
William B. Chapman - Sunnyvale CA, US
Andrew Daiber - Palo Alto CA, US
Alejandro D. Farinas - Mountain View CA, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01S003/10
H01S003/098

US Classification:

372 20, 372 18

Abstract:

An external cavity laser apparatus and method wherein wavelength or channel selection is carried independently from adjustment of external cavity optical path length. The apparatus comprises a wavelength or channel selector tuner and an external cavity tuner, wherein the wavelength tuner is uncoupled from the external cavity tuner. The tuning mechanisms for wavelength selection and cavity optical path length are configured to operate independently or orthogonally with respect to each other. The wavelength tuner may operate according to a first, channel selection signal, while the external cavity tuner operates according to a second, external cavity adjustment signal. The wavelength tuner and external cavity tuner may operate under the control of the same, or of separate controllers. The channel selection signal may be derived from a look-up table of adjustment parameter data accessed by a controller, and the external cavity adjustment signal may be derived from an error signal from a detector configured to measure external cavity loss.

External Cavity Laser Method And Apparatus With Orthogonal Tuning Of Laser Wavelength And Cavity Optical Path Length

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US Patent:

7218652, May 15, 2007

Filed:

Jan 13, 2005

Appl. No.:

11/036526

Inventors:

William B. Chapman - Sunnyvale CA, US
Alejandro D. Farinas - Mountain View CA, US
Andrew Daiber - Palo Alto CA, US
Hua Li - San Jose CA, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01S 3/10
H01S 3/098

US Classification:

372 20, 372 18

Abstract:

Non-Disruptive Failover Of Rdma Connection

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US Patent:

8627136, Jan 7, 2014

Filed:

Dec 27, 2010

Appl. No.:

12/978866

Inventors:

Hari Shankar - San Jose CA, US
Huadong Liu - Research Triangle Park NC, US
Hua Li - Research Triangle Park NC, US

Assignee:

NetApp Inc. - Sunnyvale CA

International Classification:

G06F 11/00

US Classification:

714 411, 709212, 709218, 709217

Abstract:

A novel RDMA connection failover technique that minimizes disruption to upper subsystem modules (executed on a computer node), which create requests for data transfer. A new failover virtual layer performs failover of an RDMA connection in error so that the upper subsystem that created a request does not have knowledge of an error (which is recoverable in software and hardware), or of a failure on the RDMA connection due to the error. Since the upper subsystem does not have knowledge of a failure on the RDMA connection or of a performed failover of the RDMA connection, the upper subsystem continues providing requests to the failover virtual layer without interruption, thereby minimizing downtime of the data transfer activity.

Quantum Dash Device

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US Patent:

20020079485, Jun 27, 2002

Filed:

Sep 20, 2001

Appl. No.:

09/961560

Inventors:

Andreas Stintz - Albuquerque NM, US
Petros Varangis - Albuquerque NM, US
Kevin Malloy - Albuquerque NM, US
Luke Lester - Albuquerque NM, US
Timothy Newell - Albuquerque NM, US
Hua Li - San Jose CA, US

International Classification:

H01L029/06

US Classification:

257/014000

Abstract:

Quantum dot active region structures are disclosed. In a preferred embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In one embodiment, the quantum dots are self-assembled quantum dots with a length-to-width ratio of at least three along the growth plane. In one embodiment, the quantum dots are formed in quantum wells for improved carrier confinement. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.

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