Bin Li

6392474, May 21, 2002

Aug 30, 2000

09/651156

Bin Li - Fairfax VA
Dave C. Lawson - Hartwood VA
Joseph Yoder - Oakton VA

BAE Systems Information and Electronic Systems Integration Inc. - Rockville MD

H03K 500

327551, 327208, 327210

A circuit for filtering single event effect (SEE) induced glitches is disclosed. The circuit for filtering SEE induced glitches comprises an SEE immune latch circuit and a delay element. The SEE immune latch circuit includes a first input, a second input, and an output. The SEE immune latch changes from one state to another state only upon having incoming input signals of identical polarity being applied contemporaneously at both the first input and the second input. The first input of the SEE immune latch circuit is directly connected to a signal input, and the second input of the SEE immune latch circuit is connected to the signal input via the delay element. The delay element provides a signal delay time equal to or greater than a pulse width of an SEE induced glitch but less than a pre-determined pulse width of an incoming signal at the signal input under normal operation. By connecting the delay element between the signal input and the second input of the SEE immune latch circuit, a temporal separation greater that the duration of an SEE induced glitch can be achieved on the data being drive into the first and the second inputs of the SEE immune latch circuit. As a result, SEE induced glitches will not be written into the SEE immune latch circuit.

6944041, Sep 13, 2005

Mar 26, 2004

10/811454

Bin Li - Chantilly VA, US
Kenneth R. Knowles - Manassas VA, US
David C. Lawson - Haymarket VA, US

BAE Systems Information and Electronic Systems Integration, Inc. - Nashua NH

G11C013/00
G11C011/00

365113, 365163

A circuit for accessing a chalcogenide memory array is disclosed. The chalcogenide memory array includes multiple subarrays with rows and columns formed by chalcogenide storage elements. The chalcogenide memory array is accessed by discrete read and write circuits. Associated with a respective one of the subarrays, each of the write circuits includes an independent write 0 circuit and an independent write 1 circuit. Also associated with a respective one of the subarrays, each of the read circuits includes a sense amplifier circuit. In addition, a voltage level control module is coupled to the read and write circuits to ensure that voltages across the chalcogenide storage elements within the chalcogenide memory array do not exceed a predetermined value during read and write operations.

6965521, Nov 15, 2005

Jul 31, 2003

10/631174

Bin Li - Chantilly VA, US
Kenneth R. Knowles - Manassas VA, US
David C. Lawson - Haymarket VA, US

BAE Systems, Information and Electronics Systems Integration, Inc. - Nashua NH

G11C011/00

365148, 365163, 365113, 36518901

A read/write circuit for accessing chalcogenide non-volatile memory cells is disclosed. The read/write circuit includes a chalcogenide storage element, a voltage limiting circuit, a current-to-voltage converter, and a buffer circuit. The voltage limiting circuit, which is coupled to the chalcogenide storage element, ensures that voltages across the chalcogenide storage element will not exceed a predetermined value during a read operation. During a read operation, the current-to-voltage converter, which is coupled to the voltage limiting circuit, converts a current pulse read from the chalcogenide storage element to a voltage pulse. By sensing the voltage pulse from the current-to-voltage converter, the buffer circuit can determine a storage state of the chalcogenide storage element.

7099187, Aug 29, 2006

Sep 14, 2005

11/225953

Bin Li - Chantilly VA, US
Kenneth R. Knowles - Manassas VA, US
David C. Lawson - Haymarket VA, US

BAE Systems Information and Electronic Systems Integration Inc. - Nashua NH
Ovonyx, Inc. - Rochester Hills MI

G11C 11/00

365163, 365113

A read/write circuit for accessing chalcogenide non-volatile memory cells is disclosed. The read/write circuit includes a chalcogenide storage element, a voltage limiting circuit, a current-to-voltage converter, and a buffer circuit. The voltage limiting circuit, which is coupled to the chalcogenide storage element, ensures that voltages across the chalcogenide storage element will not exceed a predetermined value during a read operation. During a read operation, the current-to-voltage converter, which is coupled to the voltage limiting circuit, converts a current pulse read from the chalcogenide storage element to a voltage pulse. By sensing the voltage pulse from the current-to-voltage converter, the buffer circuit can determine a storage state of the chalcogenide storage element.

7916527, Mar 29, 2011

Nov 26, 2008

12/525482

Bin Li - Chantilly VA, US
Adam Matthew Bumgarner - Duluth GA, US
Daniel Pirkl - Centreville VA, US

BAE Systems Information and Electronic Systems Integration Inc. - Nashua NH
Ovonyx, Inc. - Rochester Hills MI

G11C 11/00

365163, 365203, 36518909

A read reference circuit for a sense amplifier within a chalcogenide memory device is disclosed. The read reference circuit provides a reference voltage level to the sense amplifier for distinguishing between a logical “0” state and a logical “1” state within a chalcogenide memory cell. In conjunction with a precharge circuit, the read reference circuit generates a selectable read reference current to the sense amplifier in order to detect the logical state of the chalcogenide memory cell. The precharge circuit precharges the bitlines of the chalcogenide memory cell before the sense amplifier detects the logical state of the chalcogenide memory cell.

7965541, Jun 21, 2011

Nov 25, 2008

12/525458

Bin Li - Chantilly VA, US
John C. Rodgers - Fairfax VA, US
Nadim F. Haddad - Oakton VA, US

BAE Systems Information and Electronic Systems Integration Inc. - Nashua NH
Ovonyx, Inc. - Rochester Hills MI

G11C 11/00

365156, 365154, 365163

A non-volatile single-event upset (SEU) tolerant latch is disclosed. The non-volatile SEU tolerant latch includes a first and second inverters connected to each other in a cross-coupled manner. The gates of transistors within the first inverter are connected to the drains of transistors within the second inverter via a first feedback resistor. Similarly, the gates of transistors within the second inverter are connected to the drains of transistors within the first inverter via a second feedback resistor. The non-volatile SEU tolerant latch also includes a pair of chalcogenide memory elements connected to the inverters for storing information.

7986550, Jul 26, 2011

Nov 26, 2008

12/525510

Bin Li - Chantilly VA, US
Adam Matthew Bumgarner - Duluth GA, US

BAE Systems Information and Electronics Systems Integration Inc. - Nashua NH
Ovonyx, Inc. - Rochester Hills MI

G11C 7/00

365163, 36518915, 365151

An analog access circuit for characterizing chalcogenide memory cells is disclosed. The analog access circuit includes an analog access control module, an address and data control module, and an analog cell access and current monitoring module. The analog access control module selectively controls whether a normal memory access or an analog memory access should be performed on a specific chalcogenide memory cell. The address and data control module allows a normal memory access to the chalcogenide memory cell according to an input address. The analog cell access and current monitoring module performs an analog memory access to the chalcogenide memory cell according to the input address, and monitors a reference current from a sense amplifier associated with the chalcogenide memory cell.

8027191, Sep 27, 2011

Dec 1, 2008

12/531849

Bin Li - Chantilly VA, US
George Michael - High Point NC, US

BAE Systems Information and Electronic Systems Integration Inc. - Nashua NH
Ovonyx, Inc. - Rochester Hills MI

G11C 11/00

365163, 365148

A write circuit for providing distinctive write currents to a chalcogenide memory cell is disclosed. The write circuit includes a current amplitude trim module, a current amplification and distribution module, and a write current shaping module. The current amplitude trim module provides a well-compensated current across a predetermined range of temperatures, voltage supplies and process corners intended for programming a chalcogenide memory cell. The current amplification and distribution module amplifies the well-compensated current in order to meet a programming requirement of the chalcogenide memory cell. The write current shaping module supplies an appropriate amount of write “0” current or write “1” current, based on the amplified current, to program the chalcogenide memory cell accordingly.