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Ying Wang Holden

from Chandler, AZ
Age ~60
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Also known as:
Ying W Holden, Ying Te Holden, Ying Wang Wang, Ying Jian Wang, Ying J Wang, Ying O Wang, Yin G Wang, Ying Bi, Yingjian Wang, Ying Lai
Related to:
Bin Wang, 37
Connected to:
Allen L Holden, 50Anastacia R Holden, 39Barbara Holden, 86Berman Holden, 36Blaine Holden, 24Brendt D Holden, 53Carvel A Holden, 60Christie L Holden, 49Christy B Holden, 48Clifford R Holden, 51

Ying Holden Phones & Addresses

  • Chandler, AZ
  • Milpitas, CA
  • Redwood City, CA
  • Santa Clara, CA
  • San Mateo, CA
  • Sunnyvale, CA
  • Newark, CA
  • Fremont, CA
  • Hayward, CA
  • San Jose, CA
  • Davis, CA

Publications

Us Patents

Systems And Methods For Two-Sided Etch Of A Semiconductor Substrate

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US Patent:
6624082, Sep 23, 2003
Filed:
Jul 16, 2001
Appl. No.:
09/907127
Inventors:
Laizhong Luo - Fremont CA
Ying Holden - San Jose CA
Rene George - San Jose CA
Robert Guerra - Fremont CA
Allan Wiesnoski - Pleasanton CA
Nicole Kuhl - Sunnyvale CA
Craig Ranft - Fremont CA
Sai Mantripragada - Sunnyvale CA
Assignee:
Mattson Technology, Inc. - Fremont CA
International Classification:
H01L 21302
US Classification:
438724, 216 67
Abstract:
A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Systems And Methods For Two-Sided Etch Of A Semiconductor Substrate

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US Patent:
20010009177, Jul 26, 2001
Filed:
Jul 12, 1999
Appl. No.:
09/351257
Inventors:
LAIZHONG LUO - FREMONT CA, US
YING HOLDEN - FREMONT CA, US
RENE GEORGE - SAN JOSE CA, US
ROBERT GUERRA - FREMONT CA, US
ALLAN WEISNOSKI - PLEASANTON CA, US
NICOLE KUHL - SUNNYVALE CA, US
CRAIG RANFT - FREMONT CA, US
SAI MANTRIPRAGADA - SUNNYVALE CA, US
MASAYUKI KOJIMA - TOKYO, JP
MAKI SHIMODA - TOKYO, JP
TAKAHIRO CHIBA - IBARAKI, JP
HIDEYUKI SUGA - TOKYO, JP
KAZUBIKO KAWAI - TOKYO, JP
International Classification:
H01L021/00
US Classification:
156/345000
Abstract:
A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Systems And Methods For Two-Sided Etch Of A Semiconductor Substrate

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US Patent:
6335293, Jan 1, 2002
Filed:
Jul 12, 1999
Appl. No.:
09/351259
Inventors:
Laizhong Luo - Fremont CA
Ying Holden - San Jose CA
Rene George - San Jose CA
Robert Guerra - Fremont CA
Allan Wiesnoski - Pleasanton CA
Nicole Kuhl - Sunnyvale CA
Craig Ranft - Fremont CA
Sai Mantripragada - Sunnyvale CA
Assignee:
Mattson Technology, Inc. - Fremont CA
International Classification:
H01L 2100
US Classification:
438730, 438710, 216 67, 216 68, 156345
Abstract:
A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.
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Ying Wang Holden from Chandler, AZ, age ~60 Get Report