Search

Xufan Li

from Dublin, OH
Get Report
Related to:
Li XufanJie Li
Connected to:
Ai Q Li, 64Ai H Li, 81Aida Li, 67Aijun Li, 65Aiwen Q Li, 56Aiyan Li, 61Alan Li, 80Alice Li, 46Alida Li, 59Alisha Li, 31

Xufan Li Phones & Addresses

  • Dublin, OH

Work

Company: University of georgia Aug 2008 Address: Athens, GA Position: Graduate research assistant

Education

Degree: Doctor of Philosophy (Ph.D.) School / High School: The University of Georgia 2008 to 2013 Specialities: Materials Sciences

Skills

Differential Scanning Calorimetry • Scanning Electron Microscopy • Powder X Ray Diffraction • Tem • Afm • Materials Science • Nanomaterials • Nanostructures • Solid State Lighting • Transistors • Thin Films • Photocatalysis • Photovoltaics • Solar Energy • Inorganic Synthesis • Cvd • Pvd • Epitaxy • Hydrothermal • Sol Gel • Sintering • Transmission Electron Microscopy • X Ray Microdiffraction • Optical Microscopy • Energy Dispersive X Ray Spectroscopy • Photoluminescence • Uv Vis Nir • Xps • Lifetime • Raman Spectroscopy • Absorption Spectroscopy • Data Analysis • Matlab • Originlab • Proposal Writing • Scientific Papers

Languages

English • Mandarin

Industries

Nanotechnology

Resumes

Resumes

Xufan Li Photo 1

Senior Scientist

View page
Location:
184 Stevenson Blvd, Fremont, CA 94538
Industry:
Nanotechnology
Work:
University of Georgia - Athens, GA since Aug 2008
Graduate research assistant
Shanghai Jiao Tong University - Shanghai, China Sep 2005 - Jul 2008
Graduate student, Research assistant
Education:
The University of Georgia 2008 - 2013
Doctor of Philosophy (Ph.D.), Materials Sciences Shanghai Jiao Tong University 2005 - 2008
Master of Engineering (M.E.), Materials Science Shanghai Jiao Tong University 2001 - 2005
Bachelor of Engineering (B.E.), Materials Science and Engineering
Skills:
Differential Scanning Calorimetry
Scanning Electron Microscopy
Powder X Ray Diffraction
Tem
Afm
Materials Science
Nanomaterials
Nanostructures
Solid State Lighting
Transistors
Thin Films
Photocatalysis
Photovoltaics
Solar Energy
Inorganic Synthesis
Cvd
Pvd
Epitaxy
Hydrothermal
Sol Gel
Sintering
Transmission Electron Microscopy
X Ray Microdiffraction
Optical Microscopy
Energy Dispersive X Ray Spectroscopy
Photoluminescence
Uv Vis Nir
Xps
Lifetime
Raman Spectroscopy
Absorption Spectroscopy
Data Analysis
Matlab
Originlab
Proposal Writing
Scientific Papers
Languages:
English
Mandarin

Publications

Us Patents

Method For Growth Of Atomic Layer Ribbons And Nanoribbons Of Transition Metal Dichalcogenides

View page
US Patent:
20220325415, Oct 13, 2022
Filed:
Jun 29, 2022
Appl. No.:
17/853419
Inventors:
- Tokyo, JP
Xufan Li - Dublin OH, US
International Classification:
C23C 16/54
C23C 16/30
C23C 16/56
C23C 16/02
C23C 16/40
C23F 1/00
C23C 8/12
Abstract:
A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Moisture Governed Growth Method Of Atomic Layer Ribbons And Nanoribbons Of Transition Metal Dichalcogenides

View page
US Patent:
20210324515, Oct 21, 2021
Filed:
Jan 13, 2021
Appl. No.:
17/148129
Inventors:
- Tokyo, JP
Xufan LI - Dublin OH, US
International Classification:
C23C 16/455
C23C 16/44
C23C 16/448
C23C 16/56
C01G 39/06
Abstract:
A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Method For Growth Of Atomic Layer Ribbons And Nanoribbons Of Transition Metal Dichalcogenides

View page
US Patent:
20210324522, Oct 21, 2021
Filed:
Jun 25, 2020
Appl. No.:
16/912077
Inventors:
- Tokyo, JP
Xufan LI - Dublin OH, US
International Classification:
C23C 16/54
C23C 16/02
C23C 16/56
C23C 16/30
Abstract:
A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
Control profile
Xufan Li from Dublin, OH Get Report