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Xufan Li

from Fremont, CA
Age ~42
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Also known as:
Li Xufan
Related to:
Li XufanJie Li
Connected to:
Ai Q Li, 64Ai H Li, 81Aida Li, 67Aijun Li, 65Aiwen Q Li, 56Aiyan Li, 61Alan Li, 80Alice Li, 46Alida Li, 59Alisha Li, 31

Xufan Li Phones & Addresses

  • Fremont, CA
  • Dublin, OH
  • Knoxville, TN
  • 345 Research Dr, Athens, GA 30605 (706) 850-5375

Work

Education

School / High School: Shanghai Jiaotong University 2005 Specialities: MS in Materials Science

Skills

Differential Scanning Calorimetry • Scanning Electron Microscopy • Powder X Ray Diffraction • Tem • Afm • Materials Science • Nanomaterials • Nanostructures • Solid State Lighting • Transistors • Thin Films • Photocatalysis • Photovoltaics • Solar Energy • Inorganic Synthesis • Cvd • Pvd • Epitaxy • Hydrothermal • Sol Gel • Sintering • Transmission Electron Microscopy • X Ray Microdiffraction • Optical Microscopy • Energy Dispersive X Ray Spectroscopy • Photoluminescence • Uv Vis Nir • Xps • Lifetime • Raman Spectroscopy • Absorption Spectroscopy • Data Analysis • Matlab • Originlab • Proposal Writing • Scientific Papers

Languages

English • Mandarin

Industries

Nanotechnology

Resumes

Resumes

Xufan Li Photo 1

Senior Scientist

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Location:
184 Stevenson Blvd, Fremont, CA 94538
Industry:
Nanotechnology
Work:
University of Georgia - Athens, GA since Aug 2008
Graduate research assistant
Shanghai Jiao Tong University - Shanghai, China Sep 2005 - Jul 2008
Graduate student, Research assistant
Education:
The University of Georgia 2008 - 2013
Doctor of Philosophy (Ph.D.), Materials Sciences Shanghai Jiao Tong University 2005 - 2008
Master of Engineering (M.E.), Materials Science Shanghai Jiao Tong University 2001 - 2005
Bachelor of Engineering (B.E.), Materials Science and Engineering
Skills:
Differential Scanning Calorimetry
Scanning Electron Microscopy
Powder X Ray Diffraction
Tem
Afm
Materials Science
Nanomaterials
Nanostructures
Solid State Lighting
Transistors
Thin Films
Photocatalysis
Photovoltaics
Solar Energy
Inorganic Synthesis
Cvd
Pvd
Epitaxy
Hydrothermal
Sol Gel
Sintering
Transmission Electron Microscopy
X Ray Microdiffraction
Optical Microscopy
Energy Dispersive X Ray Spectroscopy
Photoluminescence
Uv Vis Nir
Xps
Lifetime
Raman Spectroscopy
Absorption Spectroscopy
Data Analysis
Matlab
Originlab
Proposal Writing
Scientific Papers
Languages:
English
Mandarin
Xufan Li Photo 2

Xufan Li Athens, GA

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Education:
Shanghai Jiaotong University
2005 to 2008
MS in Materials Science
Shanghai Jiaotong University
Jun 2005
Bachelor of Engineering in Materials Science and Engineering

Publications

Us Patents

Eu2+-Activated Aluminates Nanobelts, Whiskers, And Powders, Methods Of Making The Same, And Uses Thereof

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US Patent:
20120319049, Dec 20, 2012
Filed:
Feb 10, 2011
Appl. No.:
13/510460
Inventors:
Zhengwei Pan - Bogart GA, US
Feng Liu - Athens GA, US
Xufan Li - Athens GA, US
International Classification:
C09K 11/80
US Classification:
2523014R
Abstract:
Embodiments of the present disclosure relate to visible luminescent phosphors, visible luminescent nanobelt phosphors, methods of making visible luminescent phosphors, methods of making visible luminescent nanobelt phosphors, mixtures of visible luminescent phosphors, methods of using visible luminescent phosphors, waveguides including visible luminescent phosphors, white light emitting phosphors, and the like.

Catalyst Compositions, Processes For Forming The Catalyst Compositions, And Uses Thereof

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US Patent:
20220411944, Dec 29, 2022
Filed:
Mar 30, 2022
Appl. No.:
17/709130
Inventors:
- Tokyo, JP
Shutang CHEN - Livermore CA, US
Xufan LI - Fremont CA, US
International Classification:
C25B 11/089
C25B 1/04
Abstract:
Aspects of the present disclosure generally relate to catalyst compositions, processes for producing such catalyst compositions, and uses of such catalyst compositions. In an embodiment, a composition is provided. The composition includes an electrolyte material or an ion thereof, an amphiphile material or an ion thereof, and a metal component, the metal component comprising an alloy having the formula (M)(M), wherein Mis a Group 10-11 metal of the periodic table of the elements, Mis a first Group 8-11 metal of the periodic table of the elements, Mand Mare different, and a and b are positive numbers. In another embodiment, a device is provided that includes an electrolyte material or ion thereof, an amphiphile material or ion thereof, and a metal component disposed on an electrode, the metal component comprising a bimetallic nanoframe, a trimetallic nanoframe, or a combination thereof.

Bilayer Metal Dichalcogenides, Syntheses Thereof, And Uses Thereof

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US Patent:
20220406923, Dec 22, 2022
Filed:
Jun 17, 2021
Appl. No.:
17/350384
Inventors:
- Tokyo, JP
Xufan Li - Fremont CA, US
International Classification:
H01L 29/76
H01L 29/06
H01L 29/24
H01L 21/02
Abstract:
The present disclosure generally relates to bilayer metal dichalcogenides, to processes for forming bilayer metal dichalcogenides, and to uses of bilayer metal dichalcogenides in devices for quantum electronics. In an aspect, a device is provided. The device includes a gate electrode, a substrate disposed over at least a portion of the gate electrode, and a bottom layer including a first metal dichalcogenide, the bottom layer disposed over at least a portion of the substrate. The device further includes a top layer including a second metal dichalcogenide, the top layer disposed over at least a portion of the bottom layer, the first metal dichalcogenide and the second metal dichalcogenide being the same or different. The device further includes a source electrode and a drain electrode disposed over at least a portion of the top layer.

Method For Growth Of Atomic Layer Ribbons And Nanoribbons Of Transition Metal Dichalcogenides

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US Patent:
20220325415, Oct 13, 2022
Filed:
Jun 29, 2022
Appl. No.:
17/853419
Inventors:
- Tokyo, JP
Xufan Li - Dublin OH, US
International Classification:
C23C 16/54
C23C 16/30
C23C 16/56
C23C 16/02
C23C 16/40
C23F 1/00
C23C 8/12
Abstract:
A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Moisture Governed Growth Method Of Atomic Layer Ribbons And Nanoribbons Of Transition Metal Dichalcogenides

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US Patent:
20210324515, Oct 21, 2021
Filed:
Jan 13, 2021
Appl. No.:
17/148129
Inventors:
- Tokyo, JP
Xufan LI - Dublin OH, US
International Classification:
C23C 16/455
C23C 16/44
C23C 16/448
C23C 16/56
C01G 39/06
Abstract:
A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Method For Growth Of Atomic Layer Ribbons And Nanoribbons Of Transition Metal Dichalcogenides

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US Patent:
20210324522, Oct 21, 2021
Filed:
Jun 25, 2020
Appl. No.:
16/912077
Inventors:
- Tokyo, JP
Xufan LI - Dublin OH, US
International Classification:
C23C 16/54
C23C 16/02
C23C 16/56
C23C 16/30
Abstract:
A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
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Xufan Li from Fremont, CA, age ~42 Get Report