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Xingcai C Su

from San Jose, CA
Age ~57
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Also known as:
Xingcai Cai Su, Xingcai Xu, I Su
Phone and address:
3742 Evangelho Cir, San Jose, CA 95148
Connected to:
Baolei Su, 66Beihan Su, 52Bogong Su, 86Bowei Su, 31Bryan J Su, 39Carrie J Su, 39Ching-Hua Su, 70Chunming M Su, 54Danielle Su, 31Daqing S Su, 54

Xingcai Su Phones & Addresses

  • 3742 Evangelho Cir, San Jose, CA 95148
  • 5172 Apennines Cir, San Jose, CA 95138
  • 1047 Vardin Ter, Fremont, CA 94536
  • Albany, CA
  • Alameda, CA

Industries

Semiconductors

Resumes

Resumes

Xingcai Su Photo 1

Technical Director At Lam Research

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Location:
San Francisco Bay Area
Industry:
Semiconductors

Publications

Us Patents

Method For Selectively Etching Organosilicate Glass With Respect To A Doped Silicon Carbide

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US Patent:
7041230, May 9, 2006
Filed:
Jan 21, 2003
Appl. No.:
10/348724
Inventors:
Xingcai Su - Fremont CA, US
Bi Ming Yen - Fremont CA, US
Peter Loewenhardt - Pleasanton CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/00
US Classification:
216 80, 216 41, 216 58, 438691, 438706, 438740
Abstract:
A semiconductor chip formed on a substrate is provided. An oxygen-doped silicon carbide etch stop layer is formed over the substrate. An organosilicate glass layer is formed over the oxygen-doped silicon carbide etch stop layer. A feature is selectively etched in the organosilicate glass layer using an etch with an organosilicate glass to oxygen-doped silicon carbide selectivity greater than 5:1.

Gas Distribution System With Tuning Gas

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US Patent:
7169231, Jan 30, 2007
Filed:
Dec 13, 2002
Appl. No.:
10/318612
Inventors:
Dean J. Larson - Pleasanton CA, US
Babak Kadkhodayan - Hayward CA, US
Di Wu - Newark CA, US
Kenji Takeshita - Fremont CA, US
Xingcai Su - Fremont CA, US
Peter Loewenhardt - Pleasanton CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23C 16/52
C23C 16/455
C23C 16/00
H01L 21/306
US Classification:
118715, 15634529, 15634533
Abstract:
An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is provided. A tuning gas system in fluid connection to at least one of the legs of the plurality of legs is provided.

Uniform Etch System

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US Patent:
7371332, May 13, 2008
Filed:
Aug 14, 2003
Appl. No.:
10/642083
Inventors:
Dean J. Larson - Pleasanton CA, US
Babak Kadkhodayan - Hayward CA, US
Di Wu - Newark CA, US
Kenji Takeshita - Fremont CA, US
Xingcai Su - Fremont CA, US
Peter Loewenhardt - Pleasanton CA, US
Assignee:
LAM Research Corporation - Fremont CA
International Classification:
H01L 21/306
US Classification:
216 58, 216 67, 15634529, 15634533
Abstract:
Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

Uniform Etch System

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US Patent:
20040112540, Jun 17, 2004
Filed:
Oct 14, 2003
Appl. No.:
10/685739
Inventors:
Dean Larson - Pleasanton CA, US
Babak Kadkhodayan - Hayward CA, US
Di Wu - Newark CA, US
Kenji Takeshita - Fremont CA, US
Xingcai Su - Fremont CA, US
William Denty - San Jose CA, US
Peter Loewenhardt - Pleasanton CA, US
Assignee:
Lam Research Corporation
International Classification:
H01L021/306
US Classification:
156/345330
Abstract:
An apparatus for providing a gas from a gas supply to at least two different zones in a process chamber is provided. A flow divider provides a fluid connection to the gas supply, where the flow divider splits gas flow from the gas supply into a plurality of legs. A master leg is in fluid connection with the flow divider, where the master leg comprises a master fixed orifice. A first slave leg is in fluid connection with the flow divider and in parallel with the master leg, where the first slave leg comprises a first slave leg valve and a first slave leg fixed orifice.

Uniform Etch System

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US Patent:
20080210377, Sep 4, 2008
Filed:
Mar 25, 2008
Appl. No.:
12/055212
Inventors:
Dean J. Larson - Pleasanton CA, US
Babak Kadkhodayan - Hayward CA, US
Di Wu - Newark CA, US
Kenji Takeshita - Fremont CA, US
Xingcai Su - Fremont CA, US
William M. Denty - San Jose CA, US
Peter Loewenhardt - Pleasanton CA, US
Assignee:
LAM RESEARCH CORPORATION - Fremont CA
International Classification:
C23F 1/08
US Classification:
15634529
Abstract:
Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
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Xingcai C Su from San Jose, CA, age ~57 Get Report