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Ching-Hua Su Phones & Addresses

  • 14001 Mount Hope Pl SE, Huntsville, AL 35803 (256) 650-5327

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Us Patents

Method Of Promoting Single Crystal Growth During Melt Growth Of Semiconductors

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US Patent:
8535440, Sep 17, 2013
Filed:
Apr 12, 2010
Appl. No.:
12/758169
Inventors:
Ching-Hua Su - Huntsville AL, US
Assignee:
The United States of America as Represented by the Administrator of the National Aeronautics and Space Administration - Washington DC
International Classification:
C30B 11/14
US Classification:
117 81, 117 82, 117 83
Abstract:
The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.
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