Inventors:
MICHAEL G. WARD - Niskayuna NY, US
IGOR V. PEIDOUS - Loudonville NY, US
SUNNY CHIANG - Loudonville NY, US
YEN B. TA - Pomona CA, US
ANDREW DARLAK - Niskayuna NY, US
PETER I. PORSHNEV - Poway CA, US
SWAMINATHAN SRINIVASAN - Pleasanton CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
H01L 21/28
Abstract:
Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.
