Siyuan Tian

20200098551, Mar 26, 2020

Sep 20, 2018

16/136799

- Fremont CA, US
Siyuan TIAN - Fremont CA, US

H01J 37/32
H01L 21/67
H01L 21/687

A connection terminal for a heating element of a substrate support in a substrate processing system include a contact plate configured to be electrically connected to a contact pad of the heating element within a ceramic layer of the substrate support. A wire connection portion extends from the contact plate and is configured to receive and retain a wire arranged to provide electrical power to the heating element. At least one of the contact plate and the wire connection portion comprises a first material having a first coefficient of thermal expansion (CTE) that is within 20% of a second CTE of the ceramic layer.

20180005857, Jan 4, 2018

Jul 1, 2016

15/200405

- Fremont CA, US
Siyuan Tian - Fremont CA, US
Eric A. Pape - Campbell CA, US
Jorge Jose Zaninovich - Walnut Creek CA, US

H01L 21/673
H01J 37/32
C23C 16/505
H01L 21/683

A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal.

20170361551, Dec 21, 2017

Dec 8, 2015

15/534312

- Houston TX, US
Demetre J. Economou - Houston TX, US
Siyuan Tian - Houston TX, US

B29D 11/00
B82Y 30/00
H01J 37/317
H01L 21/027
G03F 1/20
H01J 37/302

Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.