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Shizu Li

from San Jose, CA
Age ~56
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Also known as:
Yansong Li, Li Shizu
Phone and address:
1438 Stone Creek Dr, San Jose, CA 95132
Related to:
Albert H Chen, 53Donna J Norman, 68Yongmei Chen, 59Mei H Chen, 68Shih-Chou Chen, 70Chin Chiang LiYansong Li, 28Mou Chen HongRichard H Chen, 77Chin Chiang Li, 54Li Chin Chiang
Connected to:
Ai Q Li, 63Ai H Li, 80Aida Li, 67Aijun Li, 65Aiwen Q Li, 56Aiyan Li, 61Alan Li, 80Alice Li, 46Alida Li, 58Alisha Li, 30

Shizu Li Phones & Addresses

  • 1438 Stone Creek Dr, San Jose, CA 95132
  • Cupertino, CA
  • Milpitas, CA
  • Sunnyvale, CA
  • Geyserville, CA

Work

Company: On semiconductor Sep 2003 to Oct 2006 Position: Senior engineer

Education

School / High School: Nanyang Technological University 1998 to 2001 Specialities: Electronics Engineering

Skills

Analog Circuit Design • Layout and Verification • Foundry Management • Engineering Management

Industries

Industrial Automation

Resumes

Resumes

Shizu Li Photo 1

Engineering Director

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Location:
San Jose, CA
Industry:
Industrial Automation
Work:
On Semiconductor Sep 2003 - Oct 2006
Senior Engineer
X-Scan Imaging Corporation Sep 2003 - Oct 2006
Engineering Director
Education:
Nanyang Technological University 1998 - 2001
Institute of Semiconductors, Chinese Academy of Sciences 1995 - 1998
Doctorates, Doctor of Philosophy, Physics Institute of Semiconductors, Chinese Academy of Sciences 1990 - 1993
Masters, Physics Beijing University of Posts and Telecommunications 1986 - 1990
Bachelors, Applied Physics
Skills:
Analog Circuit Design
Layout and Verification
Foundry Management
Engineering Management

Business Records

Name / Title
Company / Classification
Phones & Addresses
Shizu Li
President
SALMA SOLUTIONS CORP
Nonclassifiable Establishments
1438 Stone Crk Dr, San Jose, CA 95132

Publications

Us Patents

Linear X-Ray Detector With Monolithic Detector Chip Including Both Photodiode Array And Peripheral Circuits Spaced Apart

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US Patent:
8124938, Feb 28, 2012
Filed:
Aug 18, 2008
Appl. No.:
12/228809
Inventors:
Hsin-Fu Tseng - San Jose CA, US
Shizu Li - San Jose CA, US
Assignee:
X-Scan Imaging Corporation - San Jose CA
International Classification:
H01L 27/146
H01L 27/00
US Classification:
25037009, 2502081
Abstract:
A radiation damage resistant linear X-ray detector array system based on a unique buttable monolithic image sensor design and precision chip-on-board assembly technology includes at least one of the detector chips. Multiple chips of the image sensor may be butted end-to-end on a common printed circuit board to accommodate larger detection systems. A layer of scintillating material, such as GdOS:Tb (GOS), CsI(Tl), or CdWO, is placed on the image sensor to convert the impinging X-ray energies into visible light which can be detected efficiently by the image sensor array. A protective metal shield is fastened to the substrate to protect the sensitive circuits of the image sensor from X-ray radiation damage. A proper separation of sensitive circuits from the photodiode array on the sensor chip, coupled with precision registration of the sensor chips on the substrate, allows easy installation of the protective metal shield.

Cmos Time Delay Integration Sensor For X-Ray Imaging Applications

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US Patent:
8039811, Oct 18, 2011
Filed:
Nov 30, 2010
Appl. No.:
12/927961
Inventors:
Shizu Li - San Jose CA, US
Chinlee Wang - Saratoga CA, US
Assignee:
X-Scan Imaging Corporation - San Jose CA
International Classification:
G01T 1/24
US Classification:
25037014
Abstract:
A CMOS TDI image sensor consists of M pixels where each pixel is formed by a column of N TDI stages. Each TDI stage contains a photodiode that collects photo-charge and a pre-amplifier that proportionally converts the photo-charge to a voltage. Each TDI stage also has a set of capacitors, amplifiers, and switches for storage of the integrated signal voltages, where Correlated Double Sampling (CDS) technique (true or pseudo) maintains both photo-signal and reset voltages simultaneously. The CDS signal voltages can be passed from one TDI stage to the next TDI stage along a column for summing. The CDS signal voltages of the last TDI stages of M pixels are read out with a differential amplifier. This CMOS TDI structure is especially advantageous for implementing X-ray scanning detector systems requiring large pixel sizes and signal processing circuitry that is physically separated from the photodiode array for X-ray shielding.
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Shizu Li from San Jose, CA, age ~56 Get Report