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Sharma V Pamarthy

from Fremont, CA
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Connected to:
Kalyan Pamarthy, 41Sudhakar Pamarti, 50Saul A Pamas, 35Darren M Pamatat, 53Erlinda C Pamatmat, 65Alejandro T Pamatz, 48Amanda W Pambianchi, 47John M Pambianco, 48Mokihana H Pambianchi, 56Paula M Pambianco, 69

Sharma Pamarthy Phones & Addresses

  • 4313 Calypso Ter, Fremont, CA 94555 (510) 745-7276
  • Austin, TX
  • San Jose, CA

Work

Company: Applied materials 1996 to 2005 Position: Process support engineer

Education

School / High School: Santa Clara University 2004 to 2007

Languages

English

Industries

Semiconductors

Public records

Vehicle Records

Sharma Pamarthy

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Address:
4313 Calypso Ter, Fremont, CA 94555
VIN:
19UUA76547A016086
Make:
ACURA
Model:
TL
Year:
2007

Resumes

Resumes

Sharma Pamarthy Photo 1

Senior Engineering Manager

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Location:
34120 Spur Way, Fremont, CA
Industry:
Semiconductors
Work:
Applied Materials 1996 - 2005
Process Support Engineer
Conductor Tecnologia Em Meios De Pagamento May 2002 - May 2003
Key Account Technologist
Applied Materials May 2002 - May 2003
Senior Engineering Manager
Education:
Santa Clara University 2004 - 2007
Oklahoma State University 1993 - 1994
Master of Science, Masters, Chemical Engineering P.g. College of Law, Basheerbagh 1988 - 1992
Languages:
English

Publications

Us Patents

Method For Etching High-Aspect-Ratio Features

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US Patent:
6897155, May 24, 2005
Filed:
Aug 14, 2002
Appl. No.:
10/219885
Inventors:
Ajay Kumar - Sunnyvale CA, US
Anisul H. Khan - Santa Clara CA, US
Dragan Podlesnik - Palo Alto CA, US
Sharma V. Pamarthy - Hayward CA, US
Axel Henke - Dresden, DE
Stephan Wege - Dresden, DE
Virinder Grewal - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L021/302
US Classification:
438706, 438714
Abstract:
A method for operating a plasma reactor to etch high-aspect-ratio features on a workpiece in a vacuum chamber. The method comprises the performance of an etch process followed by a flash process. During the etch process, a first gas is supplied into the vacuum chamber, and a plasma of the first gas is maintained for a first period of time. The plasma of the first gas comprises etchant and passivant species. During the flash process, a second gas comprising a deposit removal gas is supplied into the vacuum chamber, and a plasma of the second gas is maintained for a second period of time. The DC voltage between the workpiece and the plasma of the second gas during the second period of time is significantly less than the DC voltage between the workpiece and the plasma of the first gas during the first period of time.

Method Of Releasing Devices From A Substrate

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US Patent:
6905616, Jun 14, 2005
Filed:
Mar 5, 2003
Appl. No.:
10/382562
Inventors:
Ajay Kumar - Sunnyvale CA, US
Anisul H Khan - Santa Clara CA, US
Sanjay M Thekdi - Santa Clara CA, US
Sharma V Pamarthy - Hayward CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L021/00
US Classification:
216 2, 216 11, 216 79, 438719, 438733, 438739
Abstract:
Micro devices are formed in situ in a high density in a substrate comprising a masked silicon layer over a stop layer of a silicon compound, by anisotropically etching the desired feature in the silicon layer, overetching to form a notch at the silicon-stop layer interface, depositing a protective fluorocarbon polymer layer on the sidewalls and bottom of the etched silicon layer, and isotropically etching to separate the etched feature from the stop layer. This method avoids the problems of stiction common in other methods of forming micro devices.

Etching Multi-Shaped Openings In Silicon

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US Patent:
6979652, Dec 27, 2005
Filed:
Apr 8, 2002
Appl. No.:
10/118763
Inventors:
Anisul Khan - Santa Clara CA, US
Sharma V Pamarthy - Hayward CA, US
Sanjay Thekdi - Santa Clara CA, US
Ajay Kumar - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L021/302
H01L021/3065
US Classification:
438700, 438703, 438706, 438710
Abstract:
Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.

Method Of Forming A Deep Trench In A Substrate

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US Patent:
8158522, Apr 17, 2012
Filed:
Sep 10, 2010
Appl. No.:
12/879874
Inventors:
Khalid M. Sirajuddin - San Jose CA, US
Digvijay Raorane - Chandler AZ, US
Jon C. Farr - Vallejo CA, US
Sharma V. Pamarthy - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/311
US Classification:
438696, 257E21218
Abstract:
Methods of forming deep trenches in substrates are described. A method includes providing a substrate with a patterned film disposed thereon, the patterned film including a trench having a first width and a pair of sidewalls, the trench exposing the top surface of the substrate. The method also includes forming a material layer over the patterned film and conformal with the trench. The method also includes etching the material layer to form sidewall spacers along the pair of sidewalls of the trench, the sidewall spacers reducing the first width of the trench to a second width. The method also includes etching the substrate to form a deep trench in the substrate, the deep trench undercutting at least a portion of the sidewall spacers.

Apparatus For Etching High Aspect Ratio Features

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US Patent:
8475625, Jul 2, 2013
Filed:
May 3, 2006
Appl. No.:
11/381523
Inventors:
Sharma Pamarthy - Hayward CA, US
Huutri Dao - San Jose CA, US
Xiaoping Zhou - San Jose CA, US
Kelly A. McDonough - San Jose CA, US
Jivko Dinev - Cupertino CA, US
Farid Abooameri - San Ramon CA, US
David E. Gutierrez - San Jose CA, US
Jim Zhongyi He - Sunnyvale CA, US
Robert S. Clark - San Jose CA, US
Dennis M. Koosau - Hayward CA, US
Jeffrey William Dietz - San Jose CA, US
Declan Scanlan - Sunnyvale CA, US
Subhash Deshmukh - San Jose CA, US
John P. Holland - San Jose CA, US
Alexander Paterson - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/3065
US Classification:
15634533, 15634524, 438689, 118715
Abstract:
Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

Method For Increasing Capacitance In Stacked And Trench Capacitors

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US Patent:
20030052088, Mar 20, 2003
Filed:
Sep 19, 2001
Appl. No.:
09/957000
Inventors:
Anisul Khan - Sunnyvale CA, US
Ajay Kumar - Sunnyvale CA, US
Sharma Pamarthy - Hayward CA, US
Sanjay Thekdi - Santa Clara CA, US
International Classification:
H01L021/3065
US Classification:
216/067000, 216/079000, 438/719000, 438/733000
Abstract:
Trench and stacked capacitors are commonly used in the construction of DRAMs utilized in electronic devices. Conventional methods of manufacture typically result in capacitor structures having relatively smooth sidewall profiles which are integrated into a capacitor structure. The present invention provides a novel method by which the capacitance density of both trench and stacked capacitors can be increased, without increasing the footprint or depth of the capacitor structure, by increasing the surface area of the sidewall profiles of the capacitor structures using an iterative etch process that comprises an isotropic plasma etching step to achieve an enlarged sidewall profile.

Method And Apparatus For Providing Modulated Bias Power To A Plasma Etch Reactor

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US Patent:
20030153195, Aug 14, 2003
Filed:
Feb 13, 2002
Appl. No.:
10/076721
Inventors:
Elisabeth Weikmann - Reichersbeuern, DE
Aduato Diaz - Mountain View CA, US
Sharma Pamarthy - Hayward CA, US
Ajay Kumar - Sunnyvale CA, US
Padmapani Nallan - San Jose CA, US
Assignee:
Applied Materials, Inc.
International Classification:
H01L021/302
H01L021/461
US Classification:
438/714000
Abstract:
A method and apparatus for modulating the bias power applied to a wafer support pedestal within a plasma etch reactor. The modulation has an on/off duty cycle of between 10 and 90 percent. Such modulation of the bias power substantially improves the verticality of the etched features located near the edge of a semiconductor wafer as the wafer is being etched in a plasma etch reactor.

Method And Apparatus Of A Substrate Etching System And Process

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US Patent:
20090272717, Nov 5, 2009
Filed:
Mar 19, 2009
Appl. No.:
12/407548
Inventors:
Sharma V. Pamarthy - Hayward CA, US
Jon C. Farr - Sunnyvale CA, US
Khalid Sirajuddin - San Jose CA, US
Ezra Robert Gold - Sunnyvale CA, US
James P. Cruse - Soquel CA, US
Scott Olszewski - Sunnyvale CA, US
Roy C. Nangoy - Santa Clara CA, US
Saravjeet Singh - Santa Clara CA, US
Jared Ahmad Lee - Santa Clara CA, US
Chunlei Zhang - Santa Clara CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23F 1/00
US Classification:
216 37, 216 41, 137596, 137 1
Abstract:
Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
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Sharma V Pamarthy from Fremont, CA Get Report