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Satish Ba Bhusarapu

from Sugar Land, TX
Age ~46

Satish Bhusarapu Phones & Addresses

  • 406 Trillium Dr, Sugar Land, TX 77479
  • Houston, TX
  • Rochester, NY
  • 120 Paradise Ln, Tonawanda, NY 14150
  • 316 Laurel St, Saint Louis, MO 63112 (314) 725-8038
  • 730 Interdrive, Saint Louis, MO 63130 (314) 725-8038
  • 6448 Enright Ave, Saint Louis, MO 63130 (314) 726-9964

Work

Company: Sunedison Apr 2014 Position: R and d director

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Washington University In St. Louis 2000 to 2005 Specialities: Chemical Engineering

Industries

Chemicals

Resumes

Resumes

Satish Bhusarapu Photo 1

R And D Director

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Location:
316 Laurel St, Saint Louis, MO 63112
Industry:
Chemicals
Work:
Sunedison
R and D Director

Memc Electronic Materials Jan 2012 - Apr 2014
Manager, Polysilicon R and D and Associate Fellow

Samsung Memc Polysilicon Jan 2012 - Apr 2014
Director of Technology

Memc Electronic Materials Jun 2008 - Dec 2011
Senior R and D Engineer

Harper International Corporation May 2005 - May 2008
Senior Process Development Engineer
Education:
Washington University In St. Louis 2000 - 2005
Doctorates, Doctor of Philosophy, Chemical Engineering
Indian Institute of Technology, Madras 1996 - 2000
Bachelors, Bachelor of Technology, Chemical Engineering
Space Central School

Publications

Us Patents

Production Of Polycrystalline Silicon In Substantially Closed-Loop Systems

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US Patent:
8449848, May 28, 2013
Filed:
Oct 22, 2010
Appl. No.:
12/910553
Inventors:
Satish Bhusarapu - Houston TX, US
Yue Huang - Midlothian VA, US
Puneet Gupta - Houston TX, US
Assignee:
MEMC Electronic Materials, Inc. - St. Peters MO
International Classification:
B01J 8/04
B01J 8/18
US Classification:
422630, 422139, 422141, 422234, 422235, 423349, 423350, 423342
Abstract:
Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.

Systems And Methods For Particle Size Determination And Control In A Fluidized Bed Reactor

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US Patent:
8452547, May 28, 2013
Filed:
Dec 29, 2010
Appl. No.:
12/981084
Inventors:
Satish Bhusarapu - Houston TX, US
Arif Nawaz - Cypress TX, US
Puneet Gupta - Houston TX, US
Karthik Balakrishnan - Houston TX, US
Assignee:
MEMC Electronic Materials, Inc. - St. Peters MO
International Classification:
G01N 15/088
G01N 15/08
US Classification:
702 29, 702 55
Abstract:
Systems and methods are provided for determining the size of particles within a fluidized bed reactor. The pressure of gas adjacent a gas inlet and adjacent a gas outlet of the reactor are measured with pressure sensors. An algorithm is applied to at least one of the pressure measurements to determine the size of particles within the reactor. The determined size of the particles can be used to control the operation of the reactor. A dosing system and method is provided for measuring defined volumes of particles for transport to the reactor.

Methods For Producing Silicon Tetrafluoride

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US Patent:
8529860, Sep 10, 2013
Filed:
Dec 15, 2010
Appl. No.:
12/969089
Inventors:
Satish Bhusarapu - Houston TX, US
Puneet Gupta - Houston TX, US
Assignee:
MEMC Electronics Materials, Inc. - St. Peters MO
International Classification:
C01B 33/107
C01B 33/04
US Classification:
423341, 423342, 423347, 423483, 423488
Abstract:
Methods for producing silicon tetrafluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce silicon tetrafluoride.

Systems For Producing Silicon Tetrafluoride From Fluorosilicates In A Fluidized Bed Reactor

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US Patent:
20100150789, Jun 17, 2010
Filed:
Dec 17, 2009
Appl. No.:
12/640346
Inventors:
Satish Bhusarapu - Houston TX, US
Puneet Gupta - Houston TX, US
Assignee:
MEMC ELECTRONIC MATERIALS, INC. - St. Peters MO
International Classification:
B01J 8/36
US Classification:
422145
Abstract:
Systems for preparing silicon tetrafluoride by the thermal decomposition of an alkali or alkaline earth-metal fluorosilicate. The system includes a drying apparatus for removing moisture from a fluorosilicate feed; a fluidized bed reactor comprising a reaction chamber for thermal decomposition of fluorosilicate into silicon tetrafluoride gas and an alkali or alkaline earth-metal fluoride; a heater apparatus and an exhaust gas treatment system for treating gases discharged from the fluidized bed reactor.

Processes For Producing Silicon Tetrafluoride From Fluorosilicates In A Fluidized Bed Reactor

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US Patent:
20100150808, Jun 17, 2010
Filed:
Dec 17, 2009
Appl. No.:
12/640337
Inventors:
Satish Bhusarapu - Houston TX, US
Puneet Gupta - Houston TX, US
Assignee:
MEMC ELECTRONIC MATERIALS, INC. - St. Peters MO
International Classification:
C01B 33/08
US Classification:
423341
Abstract:
Processes for preparing silicon tetrafluoride by the thermal decomposition of an alkali or alkaline earth-metal fluorosilicate in a fluidized bed reactor. A portion of silicon tetrafluoride that is generated in the decomposition reaction may be recycled to the reactor and used as a fluidizing gas to suspend the fluorosilicate material. Alkali or alkaline earth-metal fluoride residue generated in the decomposition reaction may be discharged from the reactor and reacted with fluorosilicic acid to produce an alkali or alkaline earth-metal fluorosilicate that may be introduced to the reactor for further generation of silicon tetrafluoride.

Methods For Producing Aluminum Trifluoride

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US Patent:
20110158896, Jun 30, 2011
Filed:
Dec 15, 2010
Appl. No.:
12/969058
Inventors:
Puneet Gupta - Houston TX, US
Satish Bhusarapu - Houston TX, US
Assignee:
MEMC ELECTRONIC MATERIALS, INC. - St. Peters MO
International Classification:
C01F 7/50
US Classification:
423489
Abstract:
Methods for producing aluminum trifluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce aluminum trifluoride.

Angle Of Repose Valve

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US Patent:
20110297861, Dec 8, 2011
Filed:
Jun 8, 2010
Appl. No.:
12/796355
Inventors:
Robert Cronin - Houston TX, US
Robert Cook - O'Fallon MO, US
Lee Ferry - St. Charles MO, US
Satish Bhusarapu - Houston TX, US
Assignee:
MEMC ELECTRONIC MATERIALS, INC. - St. Peters MO
International Classification:
F16K 5/00
US Classification:
251304, 137 1508
Abstract:
An angle of repose valve for controlling the flow of granules and a method of repairing a leak in an angle of repose valve are disclosed herein. The angle of repose valve has a housing with an interior cavity, an inlet, and an outlet. A gas is used to convey granules through the valve and the housing has a thickness such that the gas can have a pressure of at least 70 psi. A saddle is disposed in the interior cavity of the housing and is coupled to a rotatable shaft that passes through an opening in the housing. A chevron seal is disposed between the shaft and a sealing member. A compression member is threadably engaged with the sealing member and is operable to exert force on the chevron seal to expand the chevron seal against the shaft and/or the housing to prevent and/or repair leaks of gas therethrough.

Trichlorosilane Vaporization System

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US Patent:
20110300050, Dec 8, 2011
Filed:
Jun 8, 2010
Appl. No.:
12/796360
Inventors:
Zhihui Gu - Houston TX, US
Satish Bhusarapu - Houston TX, US
Timothy Truong - Pearland TX, US
Puneet Gupta - Houston TX, US
Assignee:
MEMC ELECTRONIC MATERIALS, INC. - St. Peters MO
International Classification:
C01B 33/03
F28D 1/04
F28F 1/40
US Classification:
423349, 165163, 165181, 392397
Abstract:
A heat exchanger for vaporizing a liquid and a method of using the same are disclosed herein. The heat exchanger includes a housing, a tube, a heater, and a plurality of non-reactive members. The tube is disposed in the interior of the housing and has an inlet and an outlet. The heater is configured to heat the tube. The plurality of non-reactive members are disposed in an interior cavity of the tube in an arrangement such that a plurality of voids are defined between the members and the tube. The arrangement also permits liquid to pass through the voids and travel from the inlet of the tube to the outlet of tube. The plurality of non-reactive members and the tube transfer heat to the liquid as the liquid passes through the plurality of voids in order to vaporize the liquid.
Satish Ba Bhusarapu from Sugar Land, TX, age ~46 Get Report