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Reyn Wakabayashi Phones & Addresses

  • 1550 Technology Dr UNIT 3096, San Jose, CA 95110 (808) 382-9474
  • Foster City, CA
  • Honolulu, HI
  • Gilbert, AZ
  • Santa Clara, CA

Work

Company: Solyndra Apr 2011 to Aug 2011 Position: Mechanical engineer

Education

Degree: Masters of Science School / High School: Santa Clara University 2009 to 2012 Specialities: Mechanical Design

Skills

Solidworks • Design • Analytical Skill • Equipment Design • Mechanical Design • Simulation • Analysis

Industries

Semiconductors

Resumes

Resumes

Reyn Wakabayashi Photo 1

Mechanical Engineer Iii Senior

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Location:
1550 Technology Dr, San Jose, CA 95110
Industry:
Semiconductors
Work:
Solyndra Apr 2011 - Aug 2011
Mechanical Engineer

Solyndra Jul 2010 - Apr 2011
Manufacturing Engineer

Santa Clara University Jan 2009 - Dec 2009
IRIS Nanosatellite Project Participant

Santa Clara University Sep 2007 - Jan 2009
OBSIDIAN Nanosatellite Project Participant

PAC Electric Jun 2007 - Sep 2007
Engineer Intern
Education:
Santa Clara University 2009 - 2012
Masters of Science, Mechanical Design
Santa Clara University 2005 - 2009
Bachelor of Science, Mechanical Engineering
Skills:
Solidworks
Design
Analytical Skill
Equipment Design
Mechanical Design
Simulation
Analysis

Publications

Us Patents

Methods And Apparatus For Tuning Semiconductor Processes

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US Patent:
20210287881, Sep 16, 2021
Filed:
Jan 25, 2021
Appl. No.:
17/156957
Inventors:
- Santa Clara CA, US
Carlaton WONG - Sunnyvale CA, US
Reyn Tetsuro WAKABAYASHI - San Jose CA, US
Daniel Sang BYUN - CAMPBELL CA, US
Steven BABAYAN - Los Altos CA, US
International Classification:
H01J 37/32
H01L 21/687
Abstract:
An apparatus for processing substrates that includes a process chamber with a process volume located above a substrate support assembly surrounded by an edge ring, an upper electrode located above the process volume and a conductive tuning ring surrounding the upper electrode and in electrical contact with the upper electrode. The conductive tuning ring has at least one gas port on a lower surface above the edge ring. The conductive tuning may also have at least one stepped portion on the lower surface that forms an extended bottom surface. In some embodiments, the extended bottom surface may slant radially inwardly or radially outwardly. In some embodiments, the extended bottom surface may have one or more radiused edges.

Shower Head Assembly

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US Patent:
20210238744, Aug 5, 2021
Filed:
Feb 3, 2020
Appl. No.:
16/780855
Inventors:
- Santa Clara CA, US
JOSEPH F. SOMMERS - SAN JOSE CA, US
CARLATON WONG - SUNNYVALE CA, US
REYN WAKABAYASHI - SAN JOSE CA, US
International Classification:
C23C 16/455
H01J 37/32
Abstract:
A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si); a first ring body formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the first ring body is bonded to and extends from one of the inner portion or outer portion of the gas distribution plate; and a backing plate configured to connect to the gas distribution plate via the first ring body.

Showerhead Assembly

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US Patent:
20210238745, Aug 5, 2021
Filed:
Feb 10, 2020
Appl. No.:
16/786292
Inventors:
- Santa Clara CA, US
JOSEPH F. SOMMERS - SAN JOSE CA, US
CARLATON WONG - SUNNYVALE CA, US
REYN WAKABAYASHI - SAN JOSE CA, US
JOSEPH FREDERICK BEHNKE - SAN JOSE CA, US
International Classification:
C23C 16/455
Abstract:
A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si); a connector having a circular configuration and formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the connector is bonded to at least one of the inner portion and outer portion of the gas distribution plate; and a backing plate configured to connect to the gas distribution plate via the connector.

Showerhead Assembly

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US Patent:
20210238746, Aug 5, 2021
Filed:
Mar 19, 2020
Appl. No.:
16/823898
Inventors:
- Santa Clara CA, US
JOSEPH F. SOMMERS - SAN JOSE CA, US
CARLATON WONG - SUNNYVALE CA, US
REYN WAKABAYASHI - SAN JOSE CA, US
Joseph Frederick BEHNKE - San Jose CA, US
International Classification:
C23C 16/455
Abstract:
A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si), wherein a bonding layer is provided on a back surface of at least one of the inner portion or outer portion; a backing plate formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the backing plate is bonded to at least one of the back surface of at least one of the inner portion or outer portion of the gas distribution plate.

Edge Ring Assembly For A Substrate Support In A Plasma Processing Chamber

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US Patent:
20210043428, Feb 11, 2021
Filed:
Oct 22, 2020
Appl. No.:
17/077871
Inventors:
- Santa Clara CA, US
Anwar HUSAIN - Pleasanton CA, US
Reyn WAKABAYASHI - San Jose CA, US
International Classification:
H01J 37/32
H01L 21/683
H01L 21/687
Abstract:
The present disclosure generally relates to apparatuses and methods for controlling a plasma sheath near a substrate edge. The apparatus relates to a processing chamber and/or a substrate support that includes an edge ring assembly with an edge ring electrode and an electrostatic chuck with a chucking electrode. The edge ring assembly is positioned adjacent the electrostatic chuck, such as with the edge ring assembly positioned exterior to or about the electrostatic chuck. The edge ring assembly includes a base and a cap positioned above the base with the edge ring electrode positioned between the cap and the base. The base of the edge ring electrode may include an inner recess and/or an outer recess with the cap including one or more lips that extend into the inner recess and/or the outer recess. One or more silicon rings and/or insulating rings are positioned adjacent the edge ring assembly.

Apparatus For Reduction Or Prevention Of Arcing In A Substrate Support

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US Patent:
20200411355, Dec 31, 2020
Filed:
Jun 12, 2020
Appl. No.:
16/900102
Inventors:
- Santa Clara CA, US
Anwar HUSAIN - PLEASANTON CA, US
Kartik RAMASWAMY - San Jose CA, US
Sergio Fukuda SHOJI - San Jose CA, US
Reyn Tetsuro WAKABAYASHI - San Jose CA, US
International Classification:
H01L 21/683
H01L 21/67
H01J 37/32
Abstract:
Embodiments of a plug for use in an electrostatic chuck are provided herein. In some embodiments, a plug for use in an electrostatic chuck includes a polymer sleeve having a central opening; a core press-fit in the central opening of the polymer sleeve and having a gas flow channel disposed therethrough; a cap disposed on the polymer sleeve and covering the core, the cap having a through hole through the cap; and an annular channel disposed between the core and the cap, wherein the core, the cap, and the annular channel define a gas flow path through the plug.

Edge Ring Assembly For A Substrate Support In A Plasma Processing Chamber

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US Patent:
20200066495, Feb 27, 2020
Filed:
May 17, 2019
Appl. No.:
16/415723
Inventors:
- Santa Clara CA, US
Anwar HUSAIN - Pleasanton CA, US
Reyn WAKABAYASHI - San Jose CA, US
International Classification:
H01J 37/32
H01L 21/683
H01L 21/687
Abstract:
The present disclosure generally relates to apparatuses and methods for controlling a plasma sheath near a substrate edge. The apparatus relates to a processing chamber and/or a substrate support that includes an edge ring assembly with an edge ring electrode and an electrostatic chuck with a chucking electrode. The edge ring assembly is positioned adjacent the electrostatic chuck, such as with the edge ring assembly positioned exterior to or about the electrostatic chuck. The edge ring assembly includes a base and a cap positioned above the base with the edge ring electrode positioned between the cap and the base. The base of the edge ring electrode may include an inner recess and/or an outer recess with the cap including one or more lips that extend into the inner recess and/or the outer recess. One or more silicon rings and/or insulating rings are positioned adjacent the edge ring assembly.
Reyn T Wakabayashi from San Jose, CA, age ~37 Get Report