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Lana H Chan

from Los Gatos, CA
Age ~51
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Also known as:
Lana Hiului Chan, Lana Sun Chan, Hiului L Chan, Lana Chan Hiului, Lana H Sun, I Chan
Related to:
Sun Lee, 60Sun H Park, 53Melvin D Chan, 72Sun Park, 55Minho Kim, 44
Connected to:
Adam Chan, 59Adelfa L Chan, 62Adrienne T Chan, 45Agnes Chan, 49Ahdee Q Chan, 58Akiko Chan, 61Alicia P Chan, 44Alison Chan, 86Alissa H Chan, 28Alistair K Chan, 58

Lana Chan Phones & Addresses

  • Los Gatos, CA
  • Saratoga, CA
  • Cupertino, CA
  • 9 Milestone Ln, Northborough, MA 01532 (508) 393-1609
  • Marlborough, MA
  • Santa Clara, CA
  • San Jose, CA
  • Troy, NY
  • New Haven, CT
  • Latham, NY
  • Flushing, NY
  • 20780 Granada Ct, Saratoga, CA 95070

Work

Company: United states postal service - Oakland, CA Oct 2010 Position: Manager safety (a)

Education

School / High School: OSHA Region IX- Pleasanton, CA 2012 Specialities: Certificate in 40hrs General Construction Safety and Health

Resumes

Resumes

Lana Chan Photo 1

Lana Chan

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Location:
San Francisco, CA
Industry:
Biotechnology
Work:
Proteinsimple Jul 2014 - Sep 2016
Process Engineering Manager
Integrated Pv 2011 - 2012
Director of Engineering
Evergreen Solar 2010 - 2011
Manager, Wafer Product Development
Evergreen Solar 2008 - 2010
Senior Member, Technical Staff
Novellus Systems 2007 - 2008
Technologist
Education:
Yale University 1996 - 2001
Doctorates, Doctor of Philosophy, Chemical Engineering The Cooper Union For the Advancement of Science and Art 1992 - 1996
Bachelor of Engineering, Bachelors, Chemical Engineering
Skills:
Semiconductors
Cvd
Photovoltaics
Product Development
Project Management
Root Cause Analysis
Silicon
Global Experience
Technology Transfer
Product Management
Process Development
Customer and Vendor Management
Root Cause Problem Solving
Thin Film Deposition
Thin Film Characterization
Vacuum Technology
Ald
Tungsten
Dry Etch
Silicon Carbide
Languages:
Mandarin
Lana Chan Photo 2

Lana Chan

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Lana Chan Photo 3

Lana Chan San Leandro, CA

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Work:
United States Postal Service
Oakland, CA
Oct 2010 to Jul 2011
Manager Safety (A)
UNITED STATES POSTAL SERVICES
Oakland, CA
Dec 1999 to Sep 2010
Safety Specialist (Team Leader)
United States postal service
Oakland, CA
Nov 1987 to Dec 1999
Distribution Clerk
Education:
OSHA Region IX
Pleasanton, CA
2012 to 2012
Certificate in 40hrs General Construction Safety and Health
GSA, OSHA Partner training site
San Francisco, CA
2011 to 2011
Certificate in 30 hours Occupation Safety and Health training
OSHA Region IX,
Mountain View, CA
2010 to 2010
Certificate in 5450 Evaluating Safety and Heath Management Systems for Special Government Employees(SGE) with Voluntary Protection Programs (VPP).
National Center Development Center USPS
Normal, OK
2008 to 2008
Certificate in Leadership Effectiveness for Safety Manager
COEH UC Berkeley
Berkeley, CA
2006 to 2006
License in Building Inspections & Management Planning for Asbestos
COEH UC Berkeley - Berkeley, CA
Berkeley, CA
2006 to 2006
License in Building and Lead Inspection
OSHA Training Institute
San Diego, CA
2005 to 2005
Certificate in OSHA 6000 (Collateral Duty Course)
National Safety Council
San Mateo, CA
2002 to 2002
Certificate of completion in Advance Safety Training (Fundamentals of Industrial Hygiene, Safety Manager Techniques, Principle of Occupational Safety & Health

Publications

Us Patents

Methods For Growing Low-Resistivity Tungsten Film

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US Patent:
7589017, Sep 15, 2009
Filed:
Nov 1, 2005
Appl. No.:
11/265531
Inventors:
Lana Hiului Chan - Santa Clara CA, US
Panya Wongsenakhum - Fremont CA, US
Joshua Collins - Sunnyvale CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/4763
US Classification:
438648, 438679, 438680, 438681, 438685, 257E23163, 257E21593
Abstract:
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.

Methods For Improving Uniformity And Resistivity Of Thin Tungsten Films

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US Patent:
7655567, Feb 2, 2010
Filed:
Jul 24, 2007
Appl. No.:
11/782570
Inventors:
Juwen Gao - Fremont CA, US
Lana Hiului Chan - Santa Clara CA, US
Panya Wongsenakhum - San Francisco CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 23/48
H01L 23/52
H01L 29/40
H01L 21/4763
H01L 21/44
US Classification:
438685, 438648, 438656, 438674, 438677, 438680, 257750, 257751, 257761, 257763, 257768
Abstract:
The methods described herein relate to deposition of low resistivity, highly conformal tungsten nucleation layers. These layers serve as a seed layers for the deposition of a tungsten bulk layer. The methods are particularly useful for tungsten plug fill in which tungsten is deposited in high aspect ratio features. The methods involve depositing a nucleation layer by a combined PNL and CVD process. The substrate is first exposed to one or more cycles of sequential pulses of a reducing agent and a tungsten precursor in a PNL process. The nucleation layer is then completed by simultaneous exposure of the substrate to a reducing agent and tungsten precursor in a chemical vapor deposition process. In certain embodiments, the process is performed without the use of a borane as a reducing agent.

Method For Improving Uniformity And Adhesion Of Low Resistivity Tungsten Film

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US Patent:
7772114, Aug 10, 2010
Filed:
Dec 5, 2007
Appl. No.:
11/951236
Inventors:
Lana Hiului Chan - Santa Clara CA, US
Feng Chen - Milpitas CA, US
Karl B. Levy - Los Altos CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/443
US Classification:
438656, 438680, 438685, 257E21168
Abstract:
Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.

Cdr Control Architecture For Robust Low-Latency Exit From The Power-Saving Mode Of An Embedded Cdr In A Programmable Integrated Circuit Device

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US Patent:
7925913, Apr 12, 2011
Filed:
Sep 18, 2007
Appl. No.:
11/857141
Inventors:
Divya Vijayaraghavan - Mountain View CA, US
Michael Menghui Zheng - Fremont CA, US
Lana May Chan - Mountain View CA, US
Chong H. Lee - San Ramon CA, US
Assignee:
Altera Corporation - San Jose CA
International Classification:
G06F 1/00
H04L 7/00
H04L 7/02
US Classification:
713500, 713501, 375355, 375359
Abstract:
Clock data recovery (CDR) circuitry of a high-speed serial interface on a programmable integrated circuit device toggles, during the electrical idle period of the receiver of the interface, between its “lock-to-reference” (“LTR”) state and its normal “lock-to-data” (“LTD”) state. Whenever during this toggling mode the CDR circuitry toggles to the LTD state, it remains in that state for a predetermined interval and then returns to the LTR state, unless, while it is in the LTD state, it receives a signal from elsewhere in the receiver that data have been received and byte synchronization has occurred. The predetermined toggling interval preferably is long enough to obtain an LTR lock to minimize frequency drift, but short enough to avoid unnecessary delay in detection of the synchronization signal. Preferably, this interval is programmable by the user within limits determined by the characterization of the programmable device. Unreliable analog signal detection is thereby avoided.

Methods For Growing Low-Resistivity Tungsten For High Aspect Ratio And Small Features

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US Patent:
7955972, Jun 7, 2011
Filed:
Feb 13, 2008
Appl. No.:
12/030645
Inventors:
Lana Hiului Chan - Santa Clara CA, US
Kaihan Ashtiani - Sunnyvale CA, US
Joshua Collins - Sunnyvale CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/4763
US Classification:
438648, 438679, 438680, 438681, 438685, 257E23163, 257E21593
Abstract:
The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e. g. , as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

Methods For Growing Low-Resistivity Tungsten Film

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US Patent:
8048805, Nov 1, 2011
Filed:
Aug 10, 2009
Appl. No.:
12/538770
Inventors:
Lana Hiului Chan - Northborough MA, US
Panya Wongsenakhum - San Francisco CA, US
Joshua Collins - Sunnyvale CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/44
US Classification:
438685, 438618, 438648, 438679, 438680, 438681, 257E2117
Abstract:
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.

Method For Depositing Thin Tungsten Film With Low Resistivity And Robust Micro-Adhesion Characteristics

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US Patent:
8058170, Nov 15, 2011
Filed:
Mar 19, 2009
Appl. No.:
12/407541
Inventors:
Anand Chandrashekar - Sunnyvale CA, US
Mirko Glass - Freital, DE
Raashina Humayun - Fremont CA, US
Michael Danek - Cupertino CA, US
Kaihan Ashtiani - Cupertino CA, US
Feng Chen - Sunnyvale CA, US
Lana Hiului Chan - Northborough MA, US
Anil Mane - Sunnyvale CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/44
US Classification:
438677, 438685, 257E21575
Abstract:
Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

Methods For Improving Uniformity And Resistivity Of Thin Tungsten Films

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US Patent:
8101521, Jan 24, 2012
Filed:
Dec 11, 2009
Appl. No.:
12/636616
Inventors:
Juwen Gao - Fremont CA, US
Lana Hiului Chan - Northborough MA, US
Panya Wongsenakhum - San Francisco CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/44
US Classification:
438680, 438656, 438677, 438679, 438681, 438682, 438683, 438684, 438685, 438761, 42724919, 42725515, 42725528, 427509, 257E2116, 257E21171
Abstract:
The methods described herein relate to deposition of low resistivity, highly conformal tungsten nucleation layers. These layers serve as a seed layers for the deposition of a tungsten bulk layer. The methods are particularly useful for tungsten plug fill in which tungsten is deposited in high aspect ratio features. The methods involve depositing a nucleation layer by a combined PNL and CVD process. The substrate is first exposed to one or more cycles of sequential pulses of a reducing agent and a tungsten precursor in a PNL process. The nucleation layer is then completed by simultaneous exposure of the substrate to a reducing agent and tungsten precursor in a chemical vapor deposition process. In certain embodiments, the process is performed without the use of a borane as a reducing agent.
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Lana H Chan from Los Gatos, CA, age ~51 Get Report