Connie Han Li

20230028020, Jan 26, 2023

Sep 28, 2022

17/955072

- Arlington VA, US
Connie H. Li - Alexandria VA, US
Kathleen M. McCreary - Washington DC, US
Olaf M.J. van 't Erve - Falls Church VA, US

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

H01L 29/66
H01L 21/02
H01L 21/18
H01L 29/786
H01L 33/00
G01N 27/414

Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

20230014134, Jan 19, 2023

Sep 28, 2022

17/955155

- Arlington VA, US
Connie H. Li - Alexandria VA, US
Kathleen M. McCreary - Washington DC, US
Olaf M.J. van 't Erve - Falls Church VA, US

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

H01L 29/66
H01L 33/00
G01N 27/414
H01L 21/02
H01L 29/786
H01L 21/18

Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

20190064553, Feb 28, 2019

Oct 29, 2018

16/173724

- Arlington VA, US
Connie H. Li - Alexandria VA, US
Berend T. Jonker - Waldorf MD, US
Aubrey T. Hanbicki - Washington DC, US
Kathleen M. Mccreary - Washington DC, US

G02F 1/01
G02F 1/035

The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A acentral area of an outer surface of an added layer atop a spin Hall material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.

20180158934, Jun 7, 2018

Nov 21, 2017

15/819959

- Arlington VA, US
Connie H. Li - Alexandria VA, US
Kathleen M. McCreary - Washington DC, US
Olaf M.J. van 't Erve - Falls Church VA, US

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

H01L 29/66
H01L 33/00
H01L 33/04
H01L 33/26
H01L 29/24
H01L 21/02
H01L 29/786
G01N 27/414

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

20180158955, Jun 7, 2018

Nov 21, 2017

15/819987

- Arlington VA, US
Connie H. Li - Alexandria VA, US
Kathleen M. McCreary - Washington DC, US

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

H01L 29/78
G11C 11/22
H01L 29/66
H01L 29/51
G11C 11/56
G11C 11/02
H01L 29/68

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains and surface charges in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields and surface charges can control the structural phase of the two-dimensional material, which in turn determines whether the two-dimensional material layer is insulating or metallic, has a band gap or no band gap, and whether it is magnetic or non-magnetic. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

20170194468, Jul 6, 2017

Mar 20, 2017

15/463229

Adam L. Friedman - Silver Spring MD, US
Olaf M. T. van 't Erve - Falls Church VA, US
Connie H. Li - Alexandria VA, US
Jeremy T. Robinson - Washington DC, US
Berend T. Jonker - Waldorf MD, US

The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC

H01L 29/66
H01L 21/04
H01L 29/45
H01L 29/167
H01L 21/02
H01L 29/16

This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

20160320641, Nov 3, 2016

Apr 27, 2016

15/140191

- Arlington VA, US
Connie H. Li - Alexandria VA, US
Berend T. Jonker - Waldorf MD, US
Aubrey T. Hanbicki - Washington DC, US
Kathleen M. McCreary - Washington DC, US

G02F 1/01
G02F 1/09
G01N 21/21
G02F 1/00

The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.

20160118465, Apr 28, 2016

Oct 1, 2015

14/872308

Connie H. Li - Alexandria VA, US
Glenn G. Jernigan - Waldorf MD, US
Berend T. Jonker - Waldorf MD, US
Ramasis Goswami - Alexandria VA, US
Carl S. Hellberg - Bethesda MD, US

The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC

H01L 29/16
H01L 29/04
H01L 21/306
H01L 21/02
H01L 21/324

A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C-SiC buffer layer on Si(001) comprising a porous buffer layer of 3C-SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.