Inventors:
John L. Sturtevant - Beaverton OR, US
Yiming Gu - Hillsboro OR, US
Dyiann Chou - Portland OR, US
Chantha Lom - Beaverton OR, US
Assignee:
Integrated Device Technology, Inc. - Santa Clara CA
International Classification:
G03F007/20
Abstract:
A method for generating a photoresist structure is disclosed in which a layer of photoresist is deposited over a semiconductor substrate. In a first exposure, the layer of photoresist is exposed to deep ultraviolet light. A second exposure is then performed using a different wavelength of light to pattern the layer of photoresist. The photoresist is then developed so as to form a photoresist structure having reduced thickness and rounded corners. This gives a photoresist structure having a reduced shadow area. An angled ion implant can then be performed using the photoresist structure as a mask.