Ying Li

6921711, Jul 26, 2005

Sep 9, 2003

10/605106

Cyril Cabral, Jr. - Ossining NY, US
Paul C. Jamison - Hopewell Junction NY, US
Victor Ku - Yorktown Heights NY, US
Ying Li - Poughkeepsie NY, US
Vijay Narayanan - New York NY, US
An L Steegen - Stamford CT, US
Yun-Yu Wang - Poughquag NY, US
Kwong H. Wong - Wappingers Falls NY, US

International Business Machines Corporation - Armonk NY

H01L021/443

438589, 438592, 438595

A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.

6989318, Jan 24, 2006

Oct 22, 2003

10/605727

Bruce B. Doris - Brewster NY, US
Ying Li - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

H01L 21/76
H01L 29/00

438433, 438242, 257501, 257506

A method for reducing shallow trench isolation (STI) consumption during semiconductor device processing includes forming a hardmask over a semiconductor substrate, patterning the hardmask and forming a trench within the substrate. The trench is filled with an insulative material that is implanted with boron ions and thereafter annealed.

7035435, Apr 25, 2006

May 7, 2002

10/140511

Ying Li - Los Angeles CA, US
Tong Zhang - Mountain View CA, US
Daniel R. Tretter - San Jose CA, US

Hewlett-Packard Development Company, L.P. - Houston TX

G06K 1/00

382107, 382173, 348700, 7071041

A method and system for automatically summarizing a video document. The video document is decomposed into scenes, shots and frames, and an importance value is assigned to each scene, shot and frame. Keyframes are allocated among the shots based on the importance value of each shot. The allocated number of keyframes are then selected from each shot. The number of keyframes may be altered for greater or lesser detail in response to user input.

7047494, May 16, 2006

May 7, 2002

10/140794

Peng Wu - Mountain View CA, US
Ying Li - Los Angeles CA, US
Daniel Tretter - Palo Alto CA, US

Hewlett-Packard Development Company, L.P. - Houston TX

G06F 13/00

715723, 715719

A system and method for merging scenes in a video sequence and constructing a keyframe to represent the underlying merged video content includes decomposing a video sequence into a series of component scenes, merging component scene pairs until a predetermined number of scene sets remain, extracting a keyframe from each scene set containing a single component scene, and constructing a new keyframe for each scene set containing a plurality of component scenes.

7244644, Jul 17, 2007

Jul 21, 2005

11/161067

Huilong Zhu - Poughkeepsie NY, US
Brian L. Tessier - Poughkeepsie NY, US
Huicai Zhong - Wappingers Falls NY, US
Ying Li - Newburgh NY, US

International Business Machines Corporation - Armonk NY
Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 21/8238

438199, 438736, 438738, 438743, 438744

Methods are disclosed for forming dual stressed layers in such a way that both undercutting and an undesirable residual spacer of the first-deposited stressed layer are prevented. In one embodiment, a method includes forming a first stressed silicon nitride layer over the NFET and the PFET, forming a sacrificial layer over the first stressed silicon nitride layer such that the sacrificial layer is thinner over substantially vertical surfaces than over substantially horizontal surfaces, forming a mask over a first one of the NFET and the PFET, removing the first stressed silicon nitride layer over a second one of the NFET and the PFET, and forming a second stressed silicon nitride layer over the second one of the NFET and the PFET. The sacrificial layer prevents undercutting and forming of an undesirable residual spacer during removal of the first-deposited stressed layer.

7306983, Dec 11, 2007

Dec 10, 2004

10/905024

Dureseti Chidambarrao - Weston CT, US
Ying Li - Newburgh NY, US
Rajeev Malik - Pleasantville NY, US
Shreesh Narasimha - Beacon NY, US

International Business Machines Corporation - Armonk NY

H01L 21/8238

438199, 438230, 438581, 438583, 438791, 438FOR 431, 257E21292, 257E21293

The present invention provides a semiconductor device having dual nitride liners, a silicide layer, and a protective layer beneath one of the nitride liners for preventing the etching of the silicide layer. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a protective layer to a device, applying a first silicon nitride liner to the device, removing a portion of the first silicon nitride liner, removing a portion of the protective layer, and applying a second silicon nitride liner to the device.

7344983, Mar 18, 2008

Mar 18, 2005

10/907061

Sadanand V. Deshpande - Fishkill NY, US
Ying Li - Newburgh NY, US
Kevin E. Mello - Fishkill NY, US
Renee T. Mo - Briarcliff Manor NY, US
Wesley C. Natzle - New Paltz NY, US
Kirk D. Peterson - Jericho VT, US
Robert J. Purtell - Mohegan Lake NY, US

International Business Machines Corporation - Armonk NY

H01L 21/44

438682, 438664, 438680, 438708, 438723, 257E21165

A cluster tool is provided for the implementing of a clustered and integrated surface pre-cleaning of the surface of semiconductor devices. More particularly, there is provided a cluster tool and a method of utilization thereof in an integrated semiconductor device surface pre-cleaning, which is directed towards a manufacturing aspect in which a chamber for performing a dry processing chemical oxide removal (COR) on the semiconductor device surface is clustered with other tools, such as a metal deposition tool for silicide or contact formation, including the provision of a vacuum transfer module in the cluster tool.

7348635, Mar 25, 2008

Dec 10, 2004

10/905025

Dureseti Chidambarrao - Weston CT, US
Ying Li - Newburgh NY, US
Rajeev Malik - Pleasantville NY, US
Shreesh Narasimha - Beacon NY, US
Haining Yang - Wappingers Falls NY, US
Huilong Zhu - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

H01L 31/00

257369, 257E27062

The present invention provides a semiconductor device having dual nitride liners, which provide an increased transverse stress state for at least one FET and methods for the manufacture of such a device. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a first silicon nitride liner to the device and applying a second silicon nitride liner adjacent the first silicon nitride liner, wherein at least one of the first and second silicon nitride liners induces a transverse stress in a silicon channel beneath at least one of the first and second silicon nitride liner.