Ying Li

6921711, Jul 26, 2005

Sep 9, 2003

10/605106

Cyril Cabral, Jr. - Ossining NY, US
Paul C. Jamison - Hopewell Junction NY, US
Victor Ku - Yorktown Heights NY, US
Ying Li - Poughkeepsie NY, US
Vijay Narayanan - New York NY, US
An L Steegen - Stamford CT, US
Yun-Yu Wang - Poughquag NY, US
Kwong H. Wong - Wappingers Falls NY, US

International Business Machines Corporation - Armonk NY

H01L021/443

438589, 438592, 438595

A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.

6989318, Jan 24, 2006

Oct 22, 2003

10/605727

Bruce B. Doris - Brewster NY, US
Ying Li - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

H01L 21/76
H01L 29/00

438433, 438242, 257501, 257506

A method for reducing shallow trench isolation (STI) consumption during semiconductor device processing includes forming a hardmask over a semiconductor substrate, patterning the hardmask and forming a trench within the substrate. The trench is filled with an insulative material that is implanted with boron ions and thereafter annealed.

7306983, Dec 11, 2007

Dec 10, 2004

10/905024

Dureseti Chidambarrao - Weston CT, US
Ying Li - Newburgh NY, US
Rajeev Malik - Pleasantville NY, US
Shreesh Narasimha - Beacon NY, US

International Business Machines Corporation - Armonk NY

H01L 21/8238

438199, 438230, 438581, 438583, 438791, 438FOR 431, 257E21292, 257E21293

The present invention provides a semiconductor device having dual nitride liners, a silicide layer, and a protective layer beneath one of the nitride liners for preventing the etching of the silicide layer. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a protective layer to a device, applying a first silicon nitride liner to the device, removing a portion of the first silicon nitride liner, removing a portion of the protective layer, and applying a second silicon nitride liner to the device.

7348635, Mar 25, 2008

Dec 10, 2004

10/905025

Dureseti Chidambarrao - Weston CT, US
Ying Li - Newburgh NY, US
Rajeev Malik - Pleasantville NY, US
Shreesh Narasimha - Beacon NY, US
Haining Yang - Wappingers Falls NY, US
Huilong Zhu - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

H01L 31/00

257369, 257E27062

The present invention provides a semiconductor device having dual nitride liners, which provide an increased transverse stress state for at least one FET and methods for the manufacture of such a device. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a first silicon nitride liner to the device and applying a second silicon nitride liner adjacent the first silicon nitride liner, wherein at least one of the first and second silicon nitride liners induces a transverse stress in a silicon channel beneath at least one of the first and second silicon nitride liner.

7380005, May 27, 2008

Nov 20, 2007

11/943150

Ying Li - Mohegan Lake NY, US
Robert E. Strom - Ridgefield CT, US

International Business Machines Corporation - Armonk NY

G06F 15/173
G06F 9/46

709226, 718101, 718102, 718104, 718105, 718106

Systems, methods and computer program products for improving overall end-to-end runtime latency of flow graphs of message transformations which are placed onto an overlay network of broker machines by aggressively replicating stateless transformations. Exemplary embodiments include a method including defining a message transformation graph, receiving information about measured and estimated properties of a message flow, receiving information about physical brokers and links in the overlay network onto which the message transformation graph is deployed, labeling each of a plurality of stateless transformations associated with the flow graph as replicable, heuristically determining a number of replicas and a corresponding load partitioning ratios among the number of replicas for each stateless transformation, converting the message transformation graph into an enhanced flow graph, running a placement algorithm with the enhanced flow graph and consolidating each of the plurality of virtual replicas that are assigned to a common message broker.

7382933, Jun 3, 2008

Aug 24, 2005

11/210305

Chitra Dorai - Chappaqua NY, US
Ying Li - Mohegan Lake NY, US
Youngja Park - Edgewater NJ, US

International Business Machines Corporation - Armonk NY

G06K 9/36

382276, 382164, 382168, 382171, 382173

System and method for partitioning a video into a series of semantic units where each semantic unit relates to a generally complete thematic topic. A computer implemented method for partitioning a video into a series of semantic units wherein each semantic unit relates to a theme or a topic, comprises dividing a video into a plurality of homogeneous segments, analyzing audio and visual content of the video, extracting a plurality of keywords from the speech content of each of the plurality of homogeneous segments of the video, and detecting and merging a plurality of groups of semantically related and temporally adjacent homogeneous segments into a series of semantic units in accordance with the results of both the audio and visual analysis and the keyword extraction. The present invention can be applied to generate important table-of-contents as well as index tables for videos to facilitate efficient video topic searching and browsing.

7446062, Nov 4, 2008

Dec 10, 2004

10/905027

Dureseti Chidambarrao - Weston CT, US
Ying Li - Newburgh NY, US
Rajeev Malik - Pleasantville NY, US
Shreesh Narasimha - Beacon NY, US

International Business Machines Corporation - Armonk NY

H01L 21/318
H01L 21/44

438791, 438655, 438682

The present invention provides a semiconductor device having dual silicon nitride liners and a reformed silicide layer and related methods for the manufacture of such a device. The reformed silicide layer has a thickness and resistance substantially similar to a silicide layer not exposed to the formation of the dual silicon nitride liners. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a first silicon nitride liner to a silicide layer, removing a portion of the first silicon nitride liner, reforming a portion of the silicide layer removed during the removal step, and applying a second silicon nitride liner to the silicide layer.

7446395, Nov 4, 2008

Aug 28, 2007

11/845888

Dureseti Chidambarrao - Weston CT, US
Ying Li - Newburgh NY, US
Rajeev Malik - Pleasantville NY, US
Shreesh Narasimha - Beacon NY, US

International Business Machines Corporation - Armonk NY

H01L 23/58

257640, 257641, 257649, 257760, 257E21148, 438FOR 127

The present invention provides a semiconductor device having dual nitride liners, a silicide layer, and a protective layer beneath one of the nitride liners for preventing the etching of the silicide layer. A first aspect of the invention provides a semiconductor device comprising a protective layer adjacent a first device, a first silicon nitride liner over the protective layer, a second silicon nitride liner adjacent a second device, and a first silicide layer adjacent the first device and a second silicide layer adjacent the second device, wherein a thickness is substantially the same in the first and second silicide layers.