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Xueping P Xu

from Westport, CT
Age ~61
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Also known as:
Xue Ping Xu, Ping Xu Xueping, Xue-Ping Xu, Zheng Xu, Xu Xueping
Phone and address:
23 Dover Rd, Westport, CT 06880
(203) 221-3038
Related to:
Kanglin Xu, 62Jia Xu, 69Albert Chong, 66Jian Xu, 35Yingyan Xu
Connected to:
Angmai Xu, 69Baoji Xu, 61Baopei Xu, 86Beibei Xu, 41Bingxin Xu, 37Chan Xu, 62Chao Xu, 66Chengkun B Xu, 61Chenxi Xu, 32Chunchun Xu, 35

Xueping Xu Phones & Addresses

  • 23 Dover Rd, Westport, CT 06880 (203) 221-3038
  • Danbury, CT
  • 15 Central St, Stamford, CT 06906 (203) 975-0864
  • 168 Belltown Rd, Stamford, CT 06905
  • Bryan, TX
  • Cambridge, MA

Work

Company: Ws materials technology llc Address: 15 Central St, Stamford, CT 06906 Phones: (203) 918-5825 Position: Principal Industries: Commercial Physical and Biological Research

Business Records

Name / Title
Company / Classification
Phones & Addresses
Xueping Xu
Principal
Ws Materials Technology LLC
Commercial Physical and Biological Research
15 Central St, Stamford, CT 06906
Xueping Xu
President, Principal
WS MATERIALS TECHNOLOGY, LLC
15 Central St, Stamford, CT 06906
(203) 918-5825
Xueping Xu
Principal
Ws Materials Technology LLC
Commercial Physical and Biological Research
15 Central St, Stamford, CT 06906

Publications

Us Patents

Electron Emitters Coated With Carbon Containing Layer

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US Patent:
6356014, Mar 12, 2002
Filed:
Mar 27, 1997
Appl. No.:
08/826454
Inventors:
Xueping Xu - Stamford CT
George R. Brandes - Danbury CT
Christopher J. Spindt - Menlo Park CA
Colin D. Stanners - San Jose CA
John M. Macaulay - Mountain View CA
Assignee:
Candescent Technologies Corporation - San Jose CA
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
H01J 130
US Classification:
313497, 313309, 313336
Abstract:
A cathode structure suitable for a flat-panel display contains an emitter layer ( ) divided into emitter lines, a plurality of electron emitters ( , or ) situated over the emitter lines, and a gate layer ( A) having an upper surface spaced largely above the electron emitters. The gate layer has a plurality of gate holes ( B) each corresponding to one of the electron emitters. The cathode structure further includes a carbon-containing layer ( , or ) coated over the electron emitters and directly on at least part of the upper surface of the gate layer such that at least part of the carbon-containing layer extending along and above the gate layer is exposed.

Fabrication Of Electron Emitters Coated With Material Such As Carbon

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US Patent:
6379210, Apr 30, 2002
Filed:
Nov 29, 2000
Appl. No.:
09/727023
Inventors:
Xueping Xu - Stamford CT
George R. Brandes - Danbury CT
Christopher J. Spindt - Menlo Park CA
Colin D. Stanners - San Jose CA
John M. Macaulay - Mountain View CA
Assignee:
Candescent Technologies Coporation - San Jose CA
Candescent Intellectual Property Services, Inc. - San Jose CA
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
H01J 902
US Classification:
445 50, 445 24
Abstract:
A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0. 8 to 1. 0 eV.

Microelectronic And Microelectromechanical Devices Comprising Carbon Nanotube Components, And Methods Of Making Same

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US Patent:
6445006, Sep 3, 2002
Filed:
Jul 27, 1999
Appl. No.:
09/361910
Inventors:
George R. Brandes - Southbury CT
Xueping Xu - Stamford CT
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
H01L 21365
US Classification:
257 76, 438 99, 257 24, 324419
Abstract:
A microelectronic or microelectromechanical device, including a substrate and a carbon microfiber formed thereon, which may be employed as an electrical connector for the device or as a selectively translational component of a microelectromechanical (MEMS) device.

Method For Achieving Improved Epitaxy Quality (Surface Texture And Defect Density) On Free-Standing (Aluminum, Indium, Gallium) Nitride ((Al,In,Ga)N) Substrates For Opto-Electronic And Electronic Devices

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US Patent:
6447604, Sep 10, 2002
Filed:
Jun 28, 2000
Appl. No.:
09/605195
Inventors:
Jeffrey S. Flynn - Litchfield CT
George R. Brandes - Southbury CT
Robert P. Vaudo - New Milford CT
David M. Keogh - San Diego CA
Xueping Xu - Stamford CT
Barbara E. Landini - New Milford CT
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C30B 2514
US Classification:
117 89, 117 93, 117 94, 117 95, 117952
Abstract:
A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e. g. , of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10 , nitrogen source material partial pressure in a range of from about 1 to about 10 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0. 1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

High Surface Quality Gan Wafer And Method Of Fabricating Same

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US Patent:
6488767, Dec 3, 2002
Filed:
Jun 8, 2001
Appl. No.:
09/877437
Inventors:
Xueping Xu - Stamford CT
Robert P. Vaudo - New Milford CT
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C30B 2502
US Classification:
117 2, 117 1, 117 90, 117 92, 117 97, 117106, 117109
Abstract:
A high quality wafer comprising Al Ga In N, wherein 0y1 and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10Ã10 m area at its Ga-side. Such wafer is chemically mechanically polished (CMP) at its Ga-side, using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. The process of fabricating such high quality Al Ga In N wafer may include steps of lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. The CMP process is usefully employed to highlight crystal defects on the Ga-side of the Al Ga In N wafer.

Amorphous Silicon Carbide Thin Film Coating

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US Patent:
6680489, Jan 20, 2004
Filed:
Apr 25, 2000
Appl. No.:
09/557165
Inventors:
George R. Brandes - Southbury CT
Chris S. Christos - Brookfield CT
Xueping Xu - Stamford CT
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
H01L 310312
US Classification:
257 77, 257 76, 438105
Abstract:
Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e. g. , by sputtering at low temperatures.

High Surface Quality Gan Wafer And Method Of Fabricating Same

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US Patent:
6951695, Oct 4, 2005
Filed:
Oct 17, 2002
Appl. No.:
10/272761
Inventors:
Xueping Xu - Stamford CT, US
Robert P. Vaudo - New Milford CT, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
B32B009/04
B24B001/00
H01L021/302
US Classification:
428698, 428689, 428697, 438691, 438692, 438693, 451 36, 451 37, 451 57
Abstract:
AlGaInN, wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10×10 μmarea. The AlGaInN may be in the form of a wafer, which is chemically mechanically polished (CMP) using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. High quality AlGaInN wafers can be fabricated by steps including lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. CMP processing may be usefully employed to highlight crystal defects of an AlGaInN wafer.

Gan Boule Grown From Liquid Melt Using Gan Seed Wafers

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US Patent:
7097707, Aug 29, 2006
Filed:
Dec 23, 2002
Appl. No.:
10/328223
Inventors:
Xueping Xu - Stamford CT, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
C30B 15/04
US Classification:
117 13, 117 14, 117 20, 117 81, 117 82, 117 83
Abstract:
A method of making a single crystal GaN boule, comprising contacting a GaN seed wafer with a GaN source environment under process conditions including a thermal gradient in the GaN source environment producing growth of gallium nitride on the GaN seed wafer, thereby forming the GaN boule. The GaN source environment in various implementations includes gallium melt in an ambient atmosphere of nitrogen or ammonia, or alternatively, supercritical ammonia containing solubilized GaN. The method produces single crystal GaN boules >10 millimeters in diameter, of device quality suitable for production of GaN wafers useful in the fabrication of microelectronic, optoelectronic and microelectromechanical devices and device precursor structures therefor.
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Xueping P Xu from Westport, CT, age ~61 Get Report