Xu U Li

6593282, Jul 15, 2003

Mar 9, 1998

09/037586

Xu Li - Santa Clara CA
Yuexing Zhao - Milpitas CA
Diane J. Hymes - San Jose CA
John M. de Larios - Palo Alto CA

Lam Research Corporation - Fremont CA

C11D 1700

510175, 510109, 510176, 510245, 510257, 510434

A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

20020077260, Jun 20, 2002

Aug 31, 2001

09/945110

Xu Li - San Jose CA, US
Yuexing Zhao - San Jose CA, US
Diane Hymes - San Jose CA, US
John de Larios - Palo Alto CA, US

C11D001/00

510/175000, 510/178000

A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.

63035510, Oct 16, 2001

May 9, 2000

9/568793

Xu Li - San Jose CA
Yuexing Zhao - San Jose CA
Diane J. Hymes - San Jose CA
John M. de Larios - Palo Alto CA

Lam Research Corporation - Fremont CA

B08B 500

510175

A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0. 18% by weight to about 0. 22% by weight and the amount of ammonia is in a range from about 0. 0225% by weight to about 0. 0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.

62940279, Sep 25, 2001

Jan 7, 1999

9/227494

Xu Li - Santa Clara CA
Yuexing Zhao - Milpitas CA
Diane J. Hymes - San Jose CA
John M. de Larios - Palo Alto CA

Lam Research Corporation - Fremont CA

B08B 100

134 3

A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

20220247972, Aug 4, 2022

Oct 21, 2021

17/507331

- San Jose CA, US
Jin Li - Los Gatos CA, US
Xu Hua Li - San Jose CA, US

H04N 7/14
G06F 16/738

A method includes receiving a request for an interaction with an agent of a contact center. The method includes establishing a private web session when the agent is unavailable. The method includes determining an estimated wait time for the interaction. The method includes selecting visual content based on matching the estimated wait time with one or more visual content items. The method includes outputting the visual content to the private web session.

20230030581, Feb 2, 2023

Aug 22, 2022

17/892695

- San Jose CA, US
Xu Hua Li - San Jose CA, US
Fengkai Zhang - Hefei, CN

H04M 3/523
H04M 3/51

The number of agents to which incoming queries to a customer interaction center agent group may be distributed is limited based on skip criteria. The skip criteria is defined based on information associated with agent devices, such as locked status of a device, in-memory status of a client application at the device, or whether a telephone number provisioned for use with the device is from an external public switched telephone network. Agents which fail to satisfy the skip criteria are excluded from distributions of queries to improve wait times for customer interaction center users. Thus, queries are distributed from a queue to agents which satisfy the skip criteria.

20230035543, Feb 2, 2023

Jul 30, 2021

17/390617

- San Jose CA, US
Xu Hua Li - San Jose CA, US
Fengkai Zhang - Hefei, CN

H04M 3/523
H04M 3/51

The distribution of incoming queries to a customer interaction center agent group is parallel processed amongst agents of that group to improve queue wait times. A threshold number of queries that may be processed by agent devices associated with the agent group at a given time are defined based on a number of agents of the agent group that are available at the given time. In response to determining that the number of queries is satisfies the threshold number of queries based on the number of agents that are available at a current time, a number of queries awaiting processing are distributed to one or more agent devices of the agent group. The threshold number of queries may be based on half of the number of agents that are available at the given time.

20230036923, Feb 2, 2023

Jul 30, 2021

17/390771

- San Jose CA, US
Xu Hua Li - San Jose CA, US

H04M 3/523
H04M 3/51
G10L 15/26
G06N 20/00

A contact center system correlates one or more past user interactions to a current user interaction with the contact center system. The current user interaction may in some cases use a different communication modality (e.g., chat, voice, video, SMS, email, or social) than a past user interaction. The contact center system may automatically alert a supervisor agent when the system detects that a certain user warrants more attention. Real-time assistance may be provided to an agent of the contact center system based on aggregated data from a user's history of user interactions across modalities.