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Tuan V Vo

from Midway City, CA
Age ~59
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Also known as:
Tuan D Vo, Van Tuan Vo, Van Ho Vo, Tuan Vvo, Vo Van Ho, Vo Van Tuan
Phone and address:
14681 Purdy St, Midway City, CA 92655
(714) 890-7231
Related to:
Thanh K Nguyen, 52
Connected to:
Aimy T Vo, 36Alice Vo, 70Allen Vo, 59Amijane O Vo, 57Anna T Vo, 43Arnold B Vo, 27Au T Vo, 38Barbara N Vo, 28Ca V Vo, 40Chinh Q Vo, 50

Tuan Vo Phones & Addresses

  • 14681 Purdy St, Midway City, CA 92655 (714) 890-7231
  • 9561 Madison Ave, Westminster, CA 92683 (714) 775-8573 (714) 839-7357
  • Garden Grove, CA
  • Sun Valley, CA

Professional Records

License Records

Tuan M. Vo

License #:
PIC.011460 - Expired
Issued Date:
Jun 22, 1978
Expiration Date:
Dec 31, 2016
Type:
Pharmacist-in-Charge (V)

Tuan M. Vo

License #:
PST.011460 - Expired
Issued Date:
Jun 22, 1978
Expiration Date:
Dec 31, 2016
Type:
Pharmacist

Tuan Dat Vo

License #:
1206020219
Category:
Nail Technician License

Public records

Vehicle Records

Tuan Vo

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Address:
13101 Yockey St APT 138, Garden Grove, CA 92844
Phone:
(714) 468-6771
VIN:
5J6RM3H72CL046408
Make:
HONDA
Model:
CR-V
Year:
2012

Business Records

Name / Title
Company / Classification
Phones & Addresses
Tuan Vo
Owner
Ritz Nail
Beauty Shop
419 S Main St, Orange, CA 92868
Tuan Vo
President
INDOCHINE, INC
Tuan A. Vo
President
QUE ME
5126 W 138 St, Hawthorne, CA 90250
Tuan C. Vo
Principal
TV Nail
Radio/Television Repair
1151 N Euclid St, Anaheim, CA 92801

Publications

Us Patents

Gaming Device And Method For Providing Sporting Games Betting Services

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US Patent:
20110151963, Jun 23, 2011
Filed:
Dec 22, 2009
Appl. No.:
12/644325
Inventors:
Felix Roderick Zafra Doctor - Phillips Ranch CA, US
Tuan Anh Vo - San Dimas CA, US
International Classification:
A63F 9/24
US Classification:
463 25, 463 30, 463 42, 463 43
Abstract:
A gaming device for taking sports related bets wherein the house offers various sports games for betting, based upon the final score combination, allowing players to select desired game(s) to place bet by picking the slot(s) on the 10×10 matrix. At end of the selected sports game, a winning slot will be determined from the slots picked before the cut-off time. Spectators of such sports will get a higher sense of thrill and better sense of satisfaction along with the betting device and the method disclosed herein.

Method And Apparatus For Simultaneous Processing Of Multiple Functions

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US Patent:
20120236378, Sep 20, 2012
Filed:
Sep 16, 2011
Appl. No.:
13/235188
Inventors:
Adrian Stoica - Altadena CA, US
David Zhu - North Hills CA, US
Mohammad Mehdi Mojarradi - La Canada CA, US
Tuan A. Vo - Hawthorne CA, US
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
G02F 3/00
H03K 19/20
US Classification:
359108, 326104
Abstract:
Electronic logic gates that operate using N logic state levels, where N is greater than 2, and methods of operating such gates. The electronic logic gates operate according to truth tables. At least two input signals each having a logic state that can range over more than two logic states are provided to the logic gates. The logic gates each provide an output signal that can have one of N logic states. Examples of gates described include NAND/NAND gates having two inputs A and B and NAND/NAND gates having three inputs A, B, and C, where A, B and C can take any of four logic states. Systems using such gates are described, and their operation illustrated. Optical logic gates that operate using N logic state levels are also described.

Inorganic Overcoat For Particulate Transport Electrode Grid

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US Patent:
62910884, Sep 18, 2001
Filed:
Sep 30, 1998
Appl. No.:
9/163518
Inventors:
Kaiser H. Wong - Torrance CA
Tuan Anh Vo - Hawthorne CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
B32B 700
US Classification:
428698
Abstract:
An inorganic, top-surface, semiconducting dielectric overcoat, having a selected time constant permits electric field charge and dissipation at a selected rate to facilitate particulate material movement over an underlying electrode grid. The coating may be made from nitrides, oxides or oxy-nitrides of silicon, or amorphous silicon. A planarized, wear resistant, chemically stable surface, and minimized inter-electrode build-up are also provided by the overcoat.

Compact Design For Combination Of An Electrical Circuit With A Segmented Electrode Development Roll

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US Patent:
58226524, Oct 13, 1998
Filed:
Mar 28, 1997
Appl. No.:
8/829710
Inventors:
Abdul M. Elhatem - Redondo Beach CA
William H. Wayman - Ontario NY
Paul C. Tien - Torrance CA
Tuan Anh Vo - Hawthorne CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
G03G 1508
G03G 1500
US Classification:
399 90
Abstract:
There is disclosed a compact design for the electronic circuits required to provide electrical contact to a SED roll of a segmented electrode development unit. In this invention, all the required high voltage and low voltage circuitry is placed on a printed flexible circuit which is folded and rolled into a cylindrical circuit to be connected to the SED roll. The flexible printed circuit has a plurality of output terminals each of which will be connected to one of the electrodes of the SED roll. In this invention, a spool is used to support the connection of the cylindrical circuit to the SED roll.

Stacked High Voltage Transistor Unit

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US Patent:
53828267, Jan 17, 1995
Filed:
Dec 21, 1993
Appl. No.:
8/170848
Inventors:
Mohamad M. Mojaradi - Los Angeles CA
Tuan A. Vo - Hawthorne CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
H01L 2358
H01L 2976
H03K 17687
US Classification:
257489
Abstract:
A high current, high voltage transistor which can be easily electrically stacked to extend the voltage range and uses less silicon area than a conventional stacked transistor configuration and a configuration of field plates that provide the greatest breakdown voltages with the highest ohmic values. Also, a star shaped field plate design which provides the greatest breakdown voltages with the highest ohmic values. The field plate is constructed using several concentric rings connected by fingers that are wider at towards the center of the concentric rings and narrower towards the perimeter of the concentric rings.

High Current High Voltage Vertical Pmos In Ultra High Voltage Cmos

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US Patent:
53492234, Sep 20, 1994
Filed:
Dec 14, 1993
Appl. No.:
8/166400
Inventors:
Mohamad M. Mojaradi - Los Angeles CA
Tuan A. Vo - Hawthorne CA
Steven A. Buhler - Redondo Beach CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
H01L 2968
H01L 2978
H01L 2940
US Classification:
257329
Abstract:
A vertical transistor which is built in a substrate of a given first carrier type utilizing standard processes but which has a unique layout which facilitates high voltage, high current operation while still conserving space. The transistor is built utilizing a repeatable combination gate/source area that is built in the upper area of the substrate such that the remaining lower portion of the substrate underneath the combination gate/source area is the drain area of the transistor.

Method Of Fabricating Nmos And Pmos Fet's In A Cmos Process

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US Patent:
54242266, Jun 13, 1995
Filed:
Apr 11, 1994
Appl. No.:
8/225673
Inventors:
Tuan A. Vo - Hawthorne CA
Mohamad M. Mojaradi - Los Angeles CA
Guillermo Lao - Hawthorne CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
H01L 21266
H01L 21336
H01L 218238
H01L 218236
US Classification:
437 30
Abstract:
A FET which can be formed on a silicon substrate and which can operate in the enhancement mode. The n+ source and drain are centrally located within n-wells which extend under the gate area, and are separated by a distance. By appropriately choosing the distance between n-wells, different threshold voltages can be obtained for several transistors on the same chip.

Flexible Donor Belt

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US Patent:
57179867, Feb 10, 1998
Filed:
Jun 24, 1996
Appl. No.:
8/668759
Inventors:
Tuan Anh Vo - Hawthorne CA
Mohammad M. Mojarradi - Pullman WA
Dennis W. Sandstrom - Sylmar CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
G03G 1506
US Classification:
399291
Abstract:
A development system which includes a flexible donor belt having groups of electrode array near the surface of the belt is disclosed. The Electrode array has group areas in which perform the function of: Loading; Transferring; Developing; Transferring and Unloading. Each electrode array group area is independently addressable and operatively connected to voltage source in order to supply a voltage in the order of. quadrature. 0-1000 volts AC or DC to each group area. The electrodes array group area picks up the toner from the magnetic brush. An electrode array group area connected to the voltage source via phase shifting circuitry such that a traveling wave pattern is established. The electrostatic field forming the traveling wave pattern pushes the charged toner particles about the surface of the donor belt from the magnetic brush to the photoconductive belt where they are transferred to the latent electrostatic images on the belt by an electrode group area which generates a toner cloud in the development zone. Thereafter, toner is moved by an electrode array group area where an electrode group area is bias to unload remaining toner off the belt.
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Tuan V Vo from Midway City, CA, age ~59 Get Report