Qi Li Phones & Addresses
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5070 Tidewater Way, Alpharetta, GA 30005 (678) 366-2078
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236 Holcombs Pond Ct, Alpharetta, GA 30022
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Mineral Bluff, GA
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Columbia, SC
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Webster, NY
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Penfield, NY
Education
School / High School:
Columbia
Ranks
Licence:
New York - Currently registered
Date:
2002
Business Records
Name / Title
Company / Classification
Phones & Addresses
Chairman, Secretary, Treasurer
N&N CHILD DEVELOPMENT CLUB INTERNATIONAL INC
President
Sino-Gain International Investment Group Inc
Publications
Us Patents
Music Feature Extraction Using Wavelet Coefficient Histograms
View pageUS Patent:
7091409, Aug 15, 2006
Filed:
Feb 13, 2004
Appl. No.:
10/777222
Inventors:
Tao Li - Rochester NY, US
Qi Li - Newark DE, US
Mitsunori Ogihara - Pittsford NY, US
Qi Li - Newark DE, US
Mitsunori Ogihara - Pittsford NY, US
Assignee:
University of Rochester - Rochester NY
International Classification:
G10H 7/00
US Classification:
84634, 84615
Abstract:
A music classification technique computes histograms of Daubechies wavelet coefficients at various frequency subbands with various resolutions. The coefficients are then used as an input to a machine learning technique to identify the genre and emotional content of music.
Method Of Making A Perovskite Layer At High Speed
View pageUS Patent:
20220238807, Jul 28, 2022
Filed:
May 28, 2020
Appl. No.:
17/615142
Inventors:
- Rochester NY, US
Qi Li - Rochester NY, US
Thomas Nathaniel Tombs - Rochester NY, US
Stephan J. DeLuca - Meadville PA, US
Qi Li - Rochester NY, US
Thomas Nathaniel Tombs - Rochester NY, US
Stephan J. DeLuca - Meadville PA, US
International Classification:
H01L 51/00
C07F 7/24
C07F 7/24
Abstract:
A method of making a perovskite layer includes providing a flexible substrate; providing a perovskite solution comprising an initial amount of solvent and perovskite precursor materials and a total solids concentration between 30 percent and 70 percent by weight of its saturation concentration; depositing the perovskite solution on the substrate; removing a first portion of the solvent from the deposited perovskite solution and increasing the total solids concentration of the perovskite solution to at least 75 percent of its saturation concentration with a first drying step; and removing a second portion of the solvent from the deposited perovskite solution with a second drying step having a higher rate of solvent evaporation that causes saturation and a conversion reaction in the deposited perovskite solution resulting in perovskite crystal formation or formation of a perovskite intermediate phase, wherein the first drying step dwell time is at least 5 times longer than the second drying step dwell time. A continuous inline method for production of photovoltaic devices at high speed, and a perovskite solution for use in making a uniform Perovskite layer at high speed to enable low cost production of high efficiency Perovskite devices are also described.
Inline Production Of Perovskite Devices
View pageUS Patent:
20200381183, Dec 3, 2020
Filed:
May 30, 2019
Appl. No.:
16/426341
Inventors:
- Rochester NY, US
Qi Li - Rochester NY, US
Thomas Nathaniel Tombs - Rochester NY, US
Stephan J. DeLuca - Meadville PA, US
Qi Li - Rochester NY, US
Thomas Nathaniel Tombs - Rochester NY, US
Stephan J. DeLuca - Meadville PA, US
International Classification:
H01G 9/20
H01G 9/00
H01L 51/00
H01L 51/42
H01L 51/44
H01G 9/00
H01L 51/00
H01L 51/42
H01L 51/44
Abstract:
A continuous inline method for production of photovoltaic devices at high speed includes: providing a substrate; depositing a first carrier transport solution layer with a first carrier transport deposition device to form a first carrier transport layer on the substrate; depositing a Perovskite solution comprising solvent and perovskite precursor materials with a Perovskite solution deposition device on the first carrier transport layer; drying the deposited Perovskite solution to form a Perovskite absorber layer; and depositing a second carrier transport solution with a second carrier transport deposition device to form a second carrier transport layer on the Perovskite absorber layer, wherein the deposited Perovskite solution is dried at least partially with a fast drying device which causes a conversion reaction and the Perovskite solution to change in optical density by at least a factor of 2 in less than 0.5 seconds after the fast drying device first acts on the Perovskite solution.
Method Of Making A Perovskite Layer At High Speed
View pageUS Patent:
20200381642, Dec 3, 2020
Filed:
May 30, 2019
Appl. No.:
16/426191
Inventors:
- Rochester NY, US
Qi Li - Rochester NY, US
Thomas Nathaniel Tombs - Rochester NY, US
Stephan J. DeLuca - Meadville PA, US
Qi Li - Rochester NY, US
Thomas Nathaniel Tombs - Rochester NY, US
Stephan J. DeLuca - Meadville PA, US
International Classification:
H01L 51/42
H01L 51/44
H01L 51/44
Abstract:
A method of making a perovskite layer includes providing a flexible substrate; providing a perovskite solution comprising an initial amount of solvent and perovskite precursor materials and a total solids concentration between 30 percent and 70 percent by weight of its saturation concentration; depositing the perovskite solution on the flexible substrate; removing a first portion of the solvent from the deposited perovskite solution and increasing the total solids concentration of the perovskite solution to at least 75 percent of its saturation concentration with a first drying step; and removing a second portion of the solvent from the deposited perovskite solution with a second drying step having a higher rate of solvent evaporation that causes saturation and a conversion reaction in the deposited perovskite solution resulting in perovskite crystal formation or formation of a perovskite intermediate phase, wherein the first drying step dwell time is at least 5 times longer than the second drying step dwell time.