Ning Li

20170040240, Feb 9, 2017

Aug 7, 2015

14/821271

- Armonk NY, US
Jeehwan Kim - Los Angeles CA, US
Ning Li - White Plains NY, US
Wencong Liu - Shandong, CN
Devendra K. Sadana - Pleasantville NY, US

H01L 23/31
H01L 21/56
H01L 29/06
H01S 5/22
H01S 5/028

A semiconductor device includes a mesa structure having vertical sidewalls, the mesa structure including an active area comprising a portion of its height. A stressed passivation liner is formed on the vertical sidewalls of the mesa structure and over the portion of the active area. The stressed passivation liner induces strain in the active area to permit tuning of performance parameters of the mesa structure.

20170033305, Feb 2, 2017

Jul 31, 2015

14/815556

- Armonk NY, US
Jeehwan Kim - Los Angeles CA, US
Ning Li - White Plains NY, US

H01L 51/44
H01L 51/42

A photovoltaic device that includes an organic or quantum dot sensitizer layer for absorbing light spectra and providing excitons. The sensitizer layer may include metal particles embedded therein for increased exciton transfer efficiency. The photovoltaic device may further include a junction comprising an electron donor layer and electron acceptor layer for charge carrier transport.

20170005229, Jan 5, 2017

Jun 30, 2015

14/788018

- Armonk NY, US
Jeehwan Kim - Los Angeles CA, US
Ning Li - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US

H01L 33/30
H01L 33/38
H01L 33/14
H01L 33/42
H01L 33/00

A light emitting diode (LED) includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. A p-type confinement layer is provided on the p-type substrate. An emission layer is provided on the p-type confinement layer. An n-type confinement layer is provided on the emission layer. A transparent II-VI n-type contact layer is formed on the n-type confinement layer as a replacement for a current spreading layer, a III-V contact layer and an n-type ohmic contact.

20160276524, Sep 22, 2016

Jun 19, 2015

14/744786

- Armonk NY, US
Jeehwan Kim - Los Angeles CA, US
Ning Li - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US

H01L 33/00
H01L 51/52
H01L 33/32
H01L 51/56
H01L 33/22
H01L 33/30

A light emitting diode (LED) containing device including a light emitting diode (LED) structure, and a light transmissive substrate in contact with the LED structure. The light transmissive substrate has a texture surface tuned to include features with dimensions greater than a wavelength of light produced by the LED structure. In some embodiments, increasing the feature size of the texture to be comparable to the wavelength of light produced by the LED increases light extraction from the LED in comparison to when the feature size of the texture is substantially less or substantially larger than the wavelength of light.

20160276628, Sep 22, 2016

Mar 16, 2015

14/659114

- Armonk NY, US
Jeehwan Kim - Los Angeles CA, US
Ning Li - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US

H01L 51/52
H01L 33/58

A light emitting diode (LED) containing device including a light emitting diode (LED) structure, and a light transmissive substrate in contact with the LED structure. The light transmissive substrate has a texture surface tuned to include features with dimensions greater than a wavelength of light produced by the LED structure. In some embodiments, increasing the feature size of the texture to be comparable to the wavelength of light produced by the LED increases light extraction from the LED in comparison to when the feature size of the texture is substantially less or substantially larger than the wavelength of light.