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Ming Te Li

from Wilsonville, OR
Age ~57
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Also known as:
Min G Li, Li Ming
Related to:
Lijie Sun, 47Benny Li, 61Wang Kam, 51Li Liwei, 52Li Li, 55Li Xiang, 43
Connected to:
Ai Q Li, 64Ai H Li, 81Aida Li, 67Aijun Li, 65Aiwen Q Li, 56Aiyan Li, 61Alan Li, 80Alice Li, 46Alida Li, 59Alisha Li, 31

Ming Li Phones & Addresses

  • Wilsonville, OR
  • Vancouver, WA
  • Sherwood, OR
  • Oregon City, OR
  • Portland, OR
  • Keaau, HI
  • West Linn, OR
  • Berkeley, CA

Education

School / High School: The Sydney Law School

Ranks

Licence: New York - Currently registered Date: 2012

Professional Records

Medicine Doctors

Ming Li Photo 1

Ming O. Li

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Specialties:
Endocrinology, Diabetes & Metabolism
Work:
Pacific Endocrinology Diabetes Health Center
55 N 13 St, San Jose, CA 95112
(408) 993-8764 (phone), (408) 993-8765 (fax)
Education:
Medical School
Capital Univ of Med Scis, Training Ctr of Gen Prac, Beijing City, China
Graduated: 1982
Conditions:
Diabetes Mellitus (DM)
Disorders of Lipoid Metabolism
Hyperthyroidism
Hypothyroidism
Metabolic Syndrome
Languages:
Chinese
English
Description:
Dr. Li graduated from the Capital Univ of Med Scis, Training Ctr of Gen Prac, Beijing City, China in 1982. She works in San Jose, CA and specializes in Endocrinology, Diabetes & Metabolism. Dr. Li is affiliated with Regional Medical Center Of San Jose.
Ming Li Photo 2

Ming Li

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Specialties:
Endocrinology, Diabetes & Metabolism
Work:
Carl T Hayden VA Medical Center Endocrinology
650 E Indian School Rd, Phoenix, AZ 85012
(602) 277-5551 (phone), (602) 200-6004 (fax)
Education:
Medical School
Beijing Med Univ, Beijing City, Beijing, China
Graduated: 1996
Languages:
English
Description:
Dr. Li graduated from the Beijing Med Univ, Beijing City, Beijing, China in 1996. He works in Phoenix, AZ and specializes in Endocrinology, Diabetes & Metabolism. Dr. Li is affiliated with Carl T Hayden VA Medical Center.
Ming Li Photo 3

Ming Dong Li

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Specialties:
Acupuncturist
Work:
UCLA Medical GroupUCLA Center East West Medicine
2336 Santa Monica Blvd STE 301, Santa Monica, CA 90404
(310) 998-9118 (phone), (310) 829-9318 (fax)
Languages:
English
Spanish
Description:
Dr. Li works in Santa Monica, CA and specializes in Acupuncturist. Dr. Li is affiliated with Ronald Reagan UCLA Medical Center and Santa Monica UCLA Medical Center.
Ming Li Photo 4

Ming Jia Li

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Specialties:
Internal Medicine
Work:
Ohio State University Hospital Medicine
320 W 10 Ave STE M112, Columbus, OH 43210
(614) 293-7499 (phone), (614) 366-2360 (fax)
Languages:
English
Description:
Dr. Li works in Columbus, OH and specializes in Internal Medicine. Dr. Li is affiliated with Nationwide Childrens Hospital and Ohio State University Wexner Medical Center.
Ming Li Photo 5

Ming Li

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Ming Li Photo 6

Ming Li

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Lawyers & Attorneys

Ming Li Photo 7

Ming Li - Lawyer

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Address:
Yingda Law Firm
(390) 711-1386 (Office)
Licenses:
New York - Currently registered 2012
Education:
The Sydney Law School

Business Records

Name / Title
Company / Classification
Phones & Addresses
Ming Li
GLOBAL PROCESS CONTROLS, INC
Ming Wen Li
BAMBOO HOUSE LEE INC
Ming Li
manager
Candragon LLC
INVESTMENT/CONSULTING/RESEARCH/MANAGEMENT
Ming S. Li
Principal
Daiyang LLC
Nonclassifiable Establishments
1819 SW 5 Ave, Portland, OR 97201
Ming Li
President, Secretary
Wealthcraft Systems Inc

Publications

Us Patents

Methods Of Forming Moisture Barrier For Low K Film Integration With Anti-Reflective Layers

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US Patent:
7642202, Jan 5, 2010
Filed:
Jun 27, 2005
Appl. No.:
11/168013
Inventors:
Ming Li - West Linn OR, US
Bart Van Schravendijk - Sunnyvale CA, US
Tom Mountsier - San Jose CA, US
Chiu Chi - San Jose CA, US
Kevin Ilcisin - Beaverton OR, US
Julian Hsieh - Pleasanton CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
H01L 21/469
US Classification:
438786, 438624, 438783, 257E21627, 257E21277
Abstract:
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.

Methods Of Forming Moisture Barrier For Low K Film Integration With Anti-Reflective Layers

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US Patent:
8003549, Aug 23, 2011
Filed:
Nov 20, 2009
Appl. No.:
12/623305
Inventors:
Ming Li - West Linn OR, US
Bart Van Schravendijk - Sunnyvale CA, US
Tom Mountsier - San Jose CA, US
Chiu Chi - San Jose CA, US
Kevin Ilcisin - Beaverton OR, US
Julian Hsieh - Pleasanton CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
H01L 21/469
US Classification:
438786, 438624, 438783, 257E21627, 257E21277
Abstract:
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.

Method And Apparatus To Reduce Defects In Liquid Based Pecvd Films

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US Patent:
8017527, Sep 13, 2011
Filed:
Dec 16, 2008
Appl. No.:
12/336386
Inventors:
Arul N. Dhas - Sherwood OR, US
Ming Li - West Linn OR, US
Joseph Bradley Laird - Sherwood OR, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
H01L 21/469
A23G 3/24
B05C 3/00
B01D 47/00
F02M 37/00
F02M 69/02
F02M 5/08
B01F 5/04
US Classification:
438778, 438780, 438781, 257E21094, 257E21477, 118429, 118723 E, 118 29, 261 341, 261 38, 261 42, 261 442, 261 76
Abstract:
Apparatuses and methods for diverting a flow of a liquid precursor during flow stabilization and plasma stabilization stages during PECVD processes are effective at eliminating particle defects in PECVD films deposited using a liquid precursor.

Plasma-Activated Deposition Of Conformal Films

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US Patent:
8101531, Jan 24, 2012
Filed:
Sep 23, 2010
Appl. No.:
12/889132
Inventors:
Ming Li - West Linn OR, US
Hu Kang - Tualatin OR, US
Mandyam Sriram - Beaverton OR, US
Adrien LaVoie - Portland OR, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/469
US Classification:
438788, 438789, 438792, 427535, 257E21576
Abstract:
Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the surface active species and generate the thin conformal film; and in a second purge phase, purging residual reactant from the process station.

Plasma-Activated Deposition Of Conformal Films

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US Patent:
8524612, Sep 3, 2013
Filed:
Jan 21, 2011
Appl. No.:
13/011569
Inventors:
Ming Li - West Linn OR, US
Hu Kang - Tualatin OR, US
Mandyam Sriram - Beaverton OR, US
Adrien LaVoie - Portland OR, US
Assignee:
Novellus Systems, Inc. - Fremont CA
International Classification:
H01L 21/31
H01L 21/469
H01L 21/44
US Classification:
438762, 438667, 438778, 438787
Abstract:
Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.

Precursor Vapor Generation And Delivery System With Filters And Filter Monitoring System

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US Patent:
8628618, Jan 14, 2014
Filed:
Sep 28, 2010
Appl. No.:
12/892279
Inventors:
Damien Slevin - Salem OR, US
Brad Laird - Sherwood OR, US
Curtis Bailey - West Linn OR, US
Ming Li - West Linn OR, US
Sirish Reddy - Hillsboro OR, US
James Sims - Tigard OR, US
Mohamed Sabri - Beaverton OR, US
Assignee:
Novellus Systems Inc. - San Jose CA
International Classification:
C23C 16/52
C23C 16/448
C23C 16/455
C23C 16/50
C23C 16/00
US Classification:
118715, 118726, 118723 R
Abstract:
A vapor delivery system for supplying vapor to a chamber in a plasma-enhanced chemical vapor deposition (PECVD) system includes a vapor supply that supplies vapor by vaporizing at least one liquid precursor in a carrier gas. A first path includes a first filter that filters the vapor flowing from the vapor supply to the chamber. At least one second path is parallel to the first path and includes a second filter that filters vapor flowing from the vapor supply to the chamber. A plurality of valves are configured to switch delivery of the vapor to the chamber between the first path and the second path.

Nitrogen-Free Fluorine-Doped Silicate Glass

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US Patent:
20040091717, May 13, 2004
Filed:
Nov 13, 2002
Appl. No.:
10/294301
Inventors:
Ming Li - West Linn OR, US
Yang Zhuang - West Linn OR, US
Jason Tian - West Linn OR, US
Zhiyuan Fang - West Linn OR, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H05H001/24
B32B017/06
US Classification:
428/426000, 427/579000
Abstract:
Nitrogen-free reactant gas containing silicon, oxygen, and fluorine atoms is flowed to a nitrogen-free CVD reaction chamber. Preferably, SiHgas, SiFgas, and COare flowed to the reaction chamber. Radio-frequency power is applied to form a plasma. Preferably, the reaction chamber is part of a dual-frequency PECVD or HPD-CVD apparatus. Reactive components formed in the plasma react to form low-dielectric-constant nitrogen-free fluorine-doped silicate glass (FSG) on a substrate surface.

Temperature Controlled Showerhead For High Temperature Operations

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US Patent:
20110146571, Jun 23, 2011
Filed:
Dec 18, 2009
Appl. No.:
12/642497
Inventors:
Christopher M. Bartlett - Beaverton OR, US
Ming Li - West Linn OR, US
Jon Henri - West Linn OR, US
Marshall R. Stowell - Wilsonville OR, US
Mohammed Sabri - Beaverton OR, US
International Classification:
C23C 16/52
C23C 16/00
US Classification:
118667
Abstract:
A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.
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Ming Te Li from Wilsonville, OR, age ~57 Get Report