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Kwok Hung Lai

from San Francisco, CA
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Also known as:
Kwok H Lai, Kwok Yuk Lai, Hung Lai Kwok, Kwok H Laik, Lai Kwok-Hung
Phone and address:
265 N Point St #304, San Francisco, CA 94133
(415) 391-1529
Related to:
David Chan, 60Lan H Chan, 73Jason Chan, 56Kenneth ChanOlga L Lee, 59
Connected to:
Adeline C Lai, 51Allen H Lai, 48Angelica Y Lai, 34Barbara E Lai, 75Bon G Lai, 69Catherine R Lai, 76Cecilia Lai, 94Cedric W Lai, 70Chiajen Lai, 56Chinh D Lai, 61

Kwok Lai Phones & Addresses

  • 265 N Point St #304, San Francisco, CA 94133 (415) 391-1529
  • 141 Del Medio Ave #116, Mountain View, CA 94040 (650) 941-4183
  • 300 Murchison Dr #313, Millbrae, CA 94030
  • 725 Vista Grande, Millbrae, CA 94030
  • 2821 Rivera Dr, Burlingame, CA 94010 (650) 259-7786
  • 1944 Garden Dr, Burlingame, CA 94010 (650) 552-9443
  • Stanford, CA
  • San Mateo, CA

Work

Company: Yeung Terry & Lai Address:

Professional Records

License Records

Kwok H Lai

License #:
03961 - Active
Category:
Accountants
Issued Date:
Apr 19, 2006
Expiration Date:
Jun 30, 2018
Type:
Certified Public Accountant

Lawyers & Attorneys

Kwok Lai Photo 1

Kwok Lai - Lawyer

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Office:
Yeung Terry & Lai
ISLN:
919768435
Admitted:
1988

Publications

Us Patents

Pvd Deposition Of Titanium And Titanium Nitride Layers In The Same Chamber Without Use Of A Collimator Or A Shutter

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US Patent:
6342133, Jan 29, 2002
Filed:
Mar 14, 2000
Appl. No.:
09/524987
Inventors:
Gerard Chris DCouto - San Jose CA
George Tkach - Santa Clara CA
Jeff Dewayne Lyons - Hayward CA
Max Biberger - Palo Alto CA
Kwok Fai Lai - Palo Alto CA
Jean Lu - Palo Alto CA
Kaihan Ashtiani - Sunnyvale CA
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
C23C 1435
US Classification:
20419217, 20419215, 20419222
Abstract:
Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.

Physical Vapor Deposition Reactor Including Magnet To Control Flow Of Ions

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US Patent:
6444105, Sep 3, 2002
Filed:
Oct 12, 2000
Appl. No.:
09/687253
Inventors:
Kwok F. Lai - Palo Alto CA
Andrew L. Nordquist - Mountain View CA
Kaihan A. Ashtiani - Mountain View CA
Larry D. Hartsough - Berkeley CA
Karl B. Levy - Los Altos CA
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
C23C 1432
US Classification:
20429821, 20429822, 20429816, 20429817, 20429819, 2042982, 20429812, 20429818
Abstract:
A novel hollow cathode magnetron source is disclosed. The source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity.

Apparatus And Method For Controlling Plasma Uniformity Across A Substrate

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US Patent:
6497796, Dec 24, 2002
Filed:
Aug 31, 2000
Appl. No.:
09/653611
Inventors:
Kaihan A. Ashtiani - Mountain View CA
Karl B. Levy - Los Altos CA
Kwok F. Lai - Palo Alto CA
Andrew L. Nordquist - Mountain View CA
Larry D. Hartsough - Berkeley CA
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
C23C 1435
US Classification:
20419212, 20429816, 20429817, 20429818, 20429819, 2042982, 20429821, 20429822
Abstract:
A magnetron source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity. Step coverage uniformity is also improved by controlling the magnetic fields, and thus the flow of ions and electrons, near the plane of the substrate.

Apparatus And Method For Depositing Superior Ta(N)/Copper Thin Films For Barrier And Seed Applications In Semiconductor Processing

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US Patent:
6541371, Apr 1, 2003
Filed:
Jan 26, 2000
Appl. No.:
09/491853
Inventors:
Kaihan A. Ashtiani - Sunnyvale CA
Maximilian A. Biberger - Palo Alto CA
Erich R. Klawuhn - San Jose CA
Kwok Fai Lai - Palo Alto CA
Karl B. Levy - Los Altos CA
J. Patrick Rymer - Livermore CA
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 214763
US Classification:
438627, 438629, 438653, 438656
Abstract:
A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about -70Â C. to about 0Â C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

Null-Field Magnetron Apparatus With Essentially Flat Target

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US Patent:
6683425, Jan 27, 2004
Filed:
Feb 5, 2002
Appl. No.:
10/068772
Inventors:
Kwok F. Lai - Palo Alto CA
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01J 2300
US Classification:
315500, 20429812
Abstract:
In one embodiment, a magnetron apparatus includes an essentially flat target having a low height-to-width ratio. The essentially flat target may be planar, dish-shaped, or stepped-shape, for example. A main magnet is located behind the flat target to provide main magnetic fields. Magnets located near the target and underneath a substrate may be configured to maintain a high density plasma and to control the flow of plasma onto the substrate.

Apparatus And Method For Depositing Superior Ta (N) Copper Thin Films For Barrier And Seed Applications In Semiconductor Processing

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US Patent:
6905959, Jun 14, 2005
Filed:
Dec 31, 2002
Appl. No.:
10/335464
Inventors:
Kaihan A. Ashtiani - Sunnyvale CA, US
Maximilian A. Biberger - Palo Alto CA, US
Erich R. Klawuhn - San Jose CA, US
Kwok Fai Lai - Palo Alto CA, US
Karl B. Levy - Los Altos CA, US
J. Patrick Rymer - Livermore CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L021/4763
US Classification:
438648, 438643, 438627, 438653, 438656, 438685
Abstract:
A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70 C. to about 0 C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

Rotating Magnet Arrays For Magnetron Sputtering Apparatus

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US Patent:
7585399, Sep 8, 2009
Filed:
Mar 31, 2005
Appl. No.:
11/097464
Inventors:
Kwok F. Lai - Palo Alto CA, US
Houchin Tang, legal representative - San Jose CA, US
Kang Song - San Jose CA, US
Douglas B. Hayden - San Jose CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
C23C 14/00
US Classification:
20429816, 20429819, 2042982, 20429812
Abstract:
In one embodiment, a magnetron sputtering apparatus includes one or more magnet arrays for moving ions or charged particles on at least two plasma discharge paths on a target. Charged particles on one of the plasma discharge paths are moved in one direction, while charged particles on the other plasma discharge path are moved in the opposite direction to reduce rotational shifting of deposition flux on the patterned substrates. The plasma discharge paths may be formed by two symmetric magnet arrays or a single asymmetric magnet array rotated from behind the target.

Real Time Angioscopy Imaging System

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US Patent:
49989723, Mar 12, 1991
Filed:
Mar 23, 1989
Appl. No.:
7/328760
Inventors:
Albert K. Chin - Palo Alto CA
Anthony A. Nobles - Carson CA
Kwok Y. Lai - Los Angeles CA
International Classification:
A61B 106
US Classification:
128 6
Abstract:
An angioscopy imaging system which operates under the control of a computer system includes an optical scanning system which is inserted into a vessel, such as an artery, for generation of an image. An irrigation system provides pulsatile introduction of flush solution to the vessel to create clear a viewing field within the vessel for the optical scanning system. The computer system controls both the optical scanning system and the irrigation system such that the generation of the image is synchronized with the pulsatile introduction of the flush solution.
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Kwok Hung Lai from San Francisco, CA Get Report