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Guo Yao Li

from San Francisco, CA
Deceased

Guo Li Phones & Addresses

  • San Francisco, CA
  • San Diego, CA

Resumes

Resumes

Guo Li Photo 1

Guo Fu Li San Francisco, CA

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Work:
CITI Garden Hotel

Aug 2006 to 2000
Maintenance Engineerer

Education:
South China Engineering University
Guangdong, China
1982 to 1984
N/A in mechanical engineering

Guo Li Photo 2

Guo Ping Li Perth WA

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Work:
Challenger Institute of Technology
Perth WA
2008 to Feb 2014
Patient Care Assistant (PCA)

South Lake Takeaway

2006 to 2007
Caf Owner

Canning Vale

2003 to 2003
Cashier

The Esplanade Hotel

2003 to 2003
Housekeeper

Liner Care

2002 to 2002
Clothes sorter

Nanhei Hotel

1992 to 1995
Waitress

Packager

1989 to 1991
Navy Base Beijing

Education:
Challenger Institute of Technology/St. John of God Hospital
2013
Certificate III in Orthopaedic

Travel and Tourism College - Aberdeen Central TAFE
2004
Certificate III in Tourism

Travel and Tourism College - Aberdeen Central TAFE
2004
Diploma in IATA/UFTAA Foundation Course

Travel and Tourism College - Aberdeen Central TAFE
2003
Certificate

Guo Li Photo 3

Guo Li

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Work:
OpenX

Dec 2012 to 2000
Senior Software Engineer

CityGrid Media

Feb 2012 to Dec 2012
Senior Software Engineer

Ebay GSI

Sep 2011 to Feb 2012
Senior Software Engineer

Oracle Corporation

Sep 2005 to Sep 2011
Application Engineer

Education:
Temple University
Jun 2002
M.S. in Computer Science

Business Records

Name / Title
Company / Classification
Phones & Addresses
Guo Yu Li
President
Bow Hon Food Products
Eating Place Ret Groceries
850 Grant Ave, San Francisco, CA 94108
Guo Wei Li
President
FLL TRADE INVESTMENT
Investor · Investors, Nec
3253 Msn St, San Francisco, CA 94110
Guo Li
Principal
Dragon City Laundromat
Coin-Operated Laundry
823 Webster St, Oakland, CA 94607
Guo T. Li
Principal
Li Guo Tong
Nonclassifiable Establishments
13259 Deron Ave, San Diego, CA 92129
Guo Qiang Li
President
Gq Enterprise Inc
13840 Torrey Del Mar Dr, San Diego, CA 92130
3555 Arville St, Las Vegas, NV 89103
Guo Yu Li
President
BOW HON RESTAURANT, INC
Oriental Restaurants
850 Grant Ave, San Francisco, CA 94108
(415) 362-0601
Guo Chang Li
President
WALL BULLION, INC
625 Larkin St #203B, San Francisco, CA 94109
Guo Qiang Li
President
PHOENIX B & K, INC
3232 Park Blvd, Oakland, CA 94606

Publications

Us Patents

Calibration Of Print Contrast Using An Optical-Electronic Sensor

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US Patent:
6431679, Aug 13, 2002
Filed:
Apr 4, 2000
Appl. No.:
09/543162
Inventors:
Guo Li - San Diego CA
David Charles Towery - San Diego CA
Francis Bockman - San Diego CA
Assignee:
Hewlett-Packard Company - Palo Alto CA
International Classification:
B41J 201
US Classification:
347 19
Abstract:
The present invention is embodied in a system and method for automatically calibrating the print contrast of an inkjet printing system using an optical-electronic sensor to detect an ink drop volume. The print contrast calibration system includes an optical-electronic sensor that obtains test pattern data from a printed test pattern, a calibration module that contains calibration data for the printing system, an installation module that determines a drop volume score by using the test pattern data and the calibration data and a printing module that determines a print contrast setting based on the drop volume score. The present invention also includes a method for calibrating print contrast in a printing system by storing standard calibration curves for the printing system, comparing the standard calibration curves with a printhead assembly calibration curve to determine a drop volume score, and setting the print contrast based on the drop volume score.

Digital Image Processing

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US Patent:
6947593, Sep 20, 2005
Filed:
Oct 5, 2001
Appl. No.:
09/972693
Inventors:
Charles Jia - San Diego CA, US
Guo Li - San Diego CA, US
Assignee:
Hewlett-Packard Development Company, LP. - Houston TX
International Classification:
G06K009/00
US Classification:
382167, 382162, 382169, 382254, 348587
Abstract:
A method of processing a color digital image file provides a “metallic,” or a “sepia,” or an “antiqued” image file. The resulting image files may be viewed, for example, on a computer monitor, or may be printed out in hard copy form using a black-and-white or color printer. A color photocopy machine which has a digital image output may be used to produce the original image file, and such a color photocopier (if it will accept digital image files), may also be used to produce the output hard copy printouts of processed image files. Thus, such a digital photocopier may be configured internally to also process image files, and may be employed to selectively process images copied on the machine into the user's choice of a metallic, a sepia, or an antiqued image on the output hardcopy of the color photocopier.

Distributed Amplifier Optical Modulators

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US Patent:
7039258, May 2, 2006
Filed:
Aug 13, 2004
Appl. No.:
10/917927
Inventors:
Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-By-The-Sea CA, US
Assignee:
Luxtera, Inc. - Carlsbad CA
International Classification:
G02F 1/025
US Classification:
385 1, 385 3, 385 14
Abstract:
High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.

Doping Profiles In Pn Diode Optical Modulators

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US Patent:
7085443, Aug 1, 2006
Filed:
Aug 11, 2004
Appl. No.:
10/916857
Inventors:
Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-by-the-Sea CA, US
Assignee:
Luxtera, Inc. - Carlsbad CA
International Classification:
G02F 1/035
G02B 6/12
US Classification:
385 14, 385 3, 385 40, 359245
Abstract:
High speed optical modulators can be made of a lateral PN diode formed in a silicon optical waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

Method And System For Enhancing Images Using Edge Orientation

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US Patent:
7088474, Aug 8, 2006
Filed:
Sep 13, 2001
Appl. No.:
09/953003
Inventors:
Guo Li - San Diego CA, US
Clayton Brian Atkins - Mountain View CA, US
Assignee:
Hewlett-Packard Development Company, LP. - Houston TX
International Classification:
H04N 1/40
US Classification:
358 327, 382260
Abstract:
A method and system for enhancing images utilizes the direction of a detected edge within an image block of an input image to selectively smooth or sharpen a pixel of the input image that corresponds to that image block. The direction of a detected edge within the image block is determined by computing the horizontal gradient and the vertical gradient, and then using the ratio of the computed gradients. In an exemplary embodiment, the method and system is designed to exclusively use bit shifting to perform multiplications, rather than using digital signal processing. Consequently, the method and system is suitable for implementation in printer firmware and/or hardware.

Pn Diode Optical Modulators Fabricated In Rib Waveguides

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US Patent:
7116853, Oct 3, 2006
Filed:
Aug 11, 2004
Appl. No.:
10/917204
Inventors:
Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-by-the-Sea CA, US
Assignee:
Luxtera, Inc. - Carlsbad CA
International Classification:
G02B 6/12
US Classification:
385 14, 385 3, 257499
Abstract:
High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

Pn Diode Optical Modulators Fabricated In Strip Loaded Waveguides

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US Patent:
7136544, Nov 14, 2006
Filed:
Aug 11, 2004
Appl. No.:
10/916839
Inventors:
Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-by-the-Sea CA, US
Assignee:
Luxtera, Inc. - Carlsbad CA
International Classification:
G02F 1/025
G02B 6/10
US Classification:
385 3, 385129, 385 14
Abstract:
High speed optical modulators can be made of a lateral PN diode formed in a strip loaded optical waveguide on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Due to differences in fabrication methods, forming strip loaded waveguides with consistent properties for use in PN diode optical modulators is much easier than fabricating similar rib waveguides.

Doping Profiles In Pn Diode Optical Modulators

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US Patent:
7251408, Jul 31, 2007
Filed:
Apr 5, 2006
Appl. No.:
11/400163
Inventors:
Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-By-The-Sea CA, US
Assignee:
Luxtera, Inc. - Carlsbad CA
International Classification:
G02B 6/10
G02B 6/26
G02F 1/035
US Classification:
385132, 385 3, 385 40
Abstract:
High speed optical modulators can be made of a lateral PN diode formed in a silicon optical rib waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

Wikipedia References

Guo Li Photo 4

Guo Li

Wikipedia

Guo Li Zhuang

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Guo Li Zhuang (Chinese: ; pinyin: Gu Li Zhung Din; literally "the strength inside the pot") is a restaurant brand that specializes in dishes prepared ...

Guo Yao Li from San Francisco, CADeceased Get Report