Eric W Li

7169687, Jan 30, 2007

Nov 3, 2004

10/980943

Eric J. Li - Chandler AZ, US
Sergei L. Voronov - Chandler AZ, US
Christopher L. Rumer - Chandler AZ, US

Intel Corporation - Santa Clara CA

H01L 21/00

438463

A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser uses multiphoton absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece. In an alternative embodiment, a first laser uses high energy single-photon absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece.

7279362, Oct 9, 2007

Mar 31, 2005

11/097424

Eric J. Li - Chandler AZ, US
Daoqiang Lu - Chandler AZ, US
Christopher L. Rumer - Chandler AZ, US
Paul A. Koning - Chandler AZ, US
Darcy E. Fleming - Tempe AZ, US
Gudbjorg H. Oskarsdottir - Chandler AZ, US
Tiffany Byrne - Chandler AZ, US

Intel Corporation - Santa Clara CA

H01L 21/00

438114, 438115, 257E21508, 257E21599

Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.

7393468, Jul 1, 2008

Feb 23, 2005

11/066704

Daoqiang Lu - Chandler AZ, US
Eric J. Li - Chandler AZ, US

Intel Corporation - Santa Clara CA

C09K 11/06
G01N 21/64
C09J 9/00
C09J 133/12
C09J 133/08

25230125, 25230116, 25230134, 252961, 427 8, 427157, 524 87, 524 88, 524 89, 524 90, 524110, 525351, 525374, 526 75, 526204, 526209, 526213, 526215, 526266, 526280, 526326, 526268, 526269, 526270, 526271

An adhesive adapted with particular optical properties, and its use to couple a substrate to a substrate holder during substrate processing are disclosed. After processing the substrate, the optical properties of the adhesive may be exploited to locate and/or remove adhesive residue that may be present on the substrate.

7504318, Mar 17, 2009

Sep 19, 2005

11/230367

Daoqiang Lu - Chandler AZ, US
Eric J. Li - Chandler AZ, US

Intel Corporation - Santa Clara CA

H01L 21/46

438462, 438114, 438465

Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a conformal layer of a water soluble nanopowder on a wafer, and then scribing the wafer.

7553386, Jun 30, 2009

May 22, 2008

12/125687

Daoqiang Lu - Chandler AZ, US
Eric J. Li - Chandler AZ, US

Intel Corporation - Santa Clara CA

C09K 11/06
G01N 21/64
C09J 9/00
C09J 133/12
C09J 133/08
B32B 37/14
B32B 43/00
B29C 63/48

156 64, 156 67, 156247, 1562722, 156344, 25230116, 25230134, 252960, 524 87, 524 88, 524 89, 524 90, 524110, 525351, 525374, 526 75, 526204, 526209, 526213, 526215, 526266, 526280, 526326, 526268, 526269, 526270, 526271

An adhesive adapted with particular optical properties, and its use to couple a substrate to a substrate holder during substrate processing are disclosed. After processing the substrate, the optical properties of the adhesive may be exploited to locate and/or remove adhesive residue that may be present on the substrate.

7611966, Nov 3, 2009

May 5, 2005

11/123675

Eric J. Li - Chandler AZ, US
Sergei L. Voronov - Chandler AZ, US
Christopher L. Rumer - Chandler AZ, US

Intel Corporation - Santa Clara CA

H01L 21/00

438460, 257E23194

A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser melts portions of the workpiece prior to a second laser ablating the portions of the workpiece.

7767563, Aug 3, 2010

Mar 21, 2007

11/726284

Eric J. Li - Chandler AZ, US

Intel Corporation - Santa Clara CA

H01L 21/28
H01L 21/44
H01L 21/336

438572, 438612, 438614

A semiconducting structure includes a thinned silicon substrate (), a silicide layer () over the thinned silicon substrate, a metal layer () over the silicide layer, a solder interface layer () over the metal layer, and a cap layer () over the solder interface layer. The thinned silicon substrate is no thicker than approximately 500 micrometers. The silicide layer is formed using a rapid thermal processing procedure that locally heats the interface between the metal layer and the silicon substrate but causes no more than negligible thermal impact to other areas of the silicon wafer.

7807573, Oct 5, 2010

Sep 17, 2008

12/284094

Eric Li - Chandler AZ, US
Sergei Voronov - Chandler AZ, US

Intel Corporation - Santa Clara CA

H01L 21/44

438680, 438106, 438681, 257E21006, 257E2117, 257E21324, 257E21327, 257E21328, 257E21347, 257E21475, 257E21547

Methods of forming a microelectronic structure are described. Embodiments of those methods include forming an identification mark on a portion of a backside of an individual die of a wafer by utilizing laser assisted CVD, wherein the formation of the identification mark is localized to a focal spot of the laser.