US Patent:
20230093450, Mar 23, 2023
Inventors:
- Santa Clara CA, US
Rui CHENG - Santa Clara CA, US
Karthik JANAKIRAMAN - San Jose CA, US
Zubin HUANG - Santa Clara CA, US
Diwakar KEDLAYA - Santa Clara CA, US
Meenakshi GUPTA - San Jose CA, US
Srinivas GUGGILLA - San Jose CA, US
Yung-chen LIN - Gardena CA, US
Hidetaka OSHIO - Tokyo, JP
Chao LI - Santa Clara CA, US
Gene LEE - San Jose CA, US
International Classification:
H01L 21/033
H01L 21/311
H01L 21/3213
Abstract:
The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.