Inventors:
Chanh Q. Vo - Folsom CA, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 21/76
US Classification:
438423, 257349, 257347, 257E2132, 257E21561
Abstract:
Embodiments of the present invention relate to the fabrication of a buried bi-layer insulator of silicon oxide and silicon nitride in a microelectronic substrate, and to the buried silicon oxide/silicon nitride bi-layer insulator itself. The buried silicon oxide/silicon nitride bi-layer insulator may be formed by implanting oxygen ions and nitrogen ions into the silicon-containing microelectronic substrate and then annealing the silicon-containing microelectronic substrate to form silicon oxide and silicon nitride layers therein.