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Zhixun Z Shen

from Stanford, CA
Age ~62

Zhixun Shen Phones & Addresses

  • 685 San Juan St, Stanford, CA 94305 (650) 323-7259
  • 310 Charleston Rd, Palo Alto, CA 94306
  • Carmel, CA
  • Mountain View, CA
  • Santa Clara, CA

Publications

Us Patents

Photon Enhanced Thermionic Emission

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US Patent:
20100139771, Jun 10, 2010
Filed:
Oct 16, 2009
Appl. No.:
12/589122
Inventors:
Jared Schwede - Menlo Park CA, US
Nicholas Melosh - Menlo Park CA, US
Zhixun Shen - Stanford CA, US
International Classification:
H01L 31/00
US Classification:
136261
Abstract:
Photon Enhanced Thermionic Emission (PETE) is exploited to provide improved efficiency for radiant energy conversion. A hot (greater than 200 C.) semiconductor cathode is illuminated such that it emits electrons. Because the cathode is hot, significantly more electrons are emitted than would be emitted from a room temperature (or colder) cathode under the same illumination conditions. As a result of this increased electron emission, the energy conversion efficiency can be significantly increased relative to a conventional photovoltaic device. In PETE, the cathode electrons can be (and typically are) thermalized with respect to the cathode. As a result, PETE does not rely on emission of non-thermalized electrons, and is significantly easier to implement than hot-carrier emission approaches.

Microwave Impedance Microscopy Using A Tuning Fork

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US Patent:
20170299525, Oct 19, 2017
Filed:
Apr 5, 2017
Appl. No.:
15/479657
Inventors:
Yongtao Cui - Riverside CA, US
Yue Ma - Stanford CA, US
Zhixun Shen - Stanford CA, US
Assignee:
The Board of Trustees of the Leland Stanford Junior University - Stanford CA
International Classification:
G01N 22/00
G01N 27/02
Abstract:
A microwave impedance microscope including a tuning fork having a high-aspect ratio etched metal tip electrode extending transversely to one tine of the fork and having a high aspect ratio to thereby reduce parasitic capacitance. The metal tip may be electrochemically etched from a wire, then bonded to the tine. The fork is slightly inclined from the surface of the sample and the tip electrode projects transversely to the fork. A microwave signal is impressed on the tip. Microwave circuitry receives microwave signals reflected from the sample back into the tip and demodulates the reflected signal according to the impressed signal. Further circuitry further demodulates the reflected signal according to the lower-frequency signal causing the fork to oscillate at its mechanically resonant frequency. A multi-wavelength matching circuit interposed between the microwave circuitry and the probe includes a coaxial cable of length half a fundamental microwave wavelength.

Metallic-Magnetic-Domain-Wall-Based Nonvolatile Tunable Resistor For Memory And Sensor Applications

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US Patent:
20160343481, Nov 24, 2016
Filed:
May 20, 2016
Appl. No.:
15/160914
Inventors:
- Palo Alto CA, US
- Saitama, JP
Kentaro Ueda - Tokyo, JP
Jun Fujioka - Tokyo, JP
Yoshinori Tokura - Tokyo, JP
Zhixun Shen - Stanford CA, US
Robert B. Laughlin - Stanford CA, US
International Classification:
H01C 7/00
H01L 43/02
H01C 1/14
H01L 43/08
Abstract:
Control of electrical conductivity is provided via electrically conductive magnetic domain walls between magnetic domains. The magnetic domains are identical except for their magnetic configuration. Altering a configuration of the magnetic domains (e.g., by thermal treatment, application of a magnetic field, etc.) can alter the electrical resistance of a device. Such devices can be used as non-volatile information storage devices or as sensors.
Zhixun Z Shen from Stanford, CA, age ~62 Get Report