US Patent:
20160343481, Nov 24, 2016
Inventors:
- Palo Alto CA, US
- Saitama, JP
Kentaro Ueda - Tokyo, JP
Jun Fujioka - Tokyo, JP
Yoshinori Tokura - Tokyo, JP
Zhixun Shen - Stanford CA, US
Robert B. Laughlin - Stanford CA, US
International Classification:
H01C 7/00
H01L 43/02
H01C 1/14
H01L 43/08
Abstract:
Control of electrical conductivity is provided via electrically conductive magnetic domain walls between magnetic domains. The magnetic domains are identical except for their magnetic configuration. Altering a configuration of the magnetic domains (e.g., by thermal treatment, application of a magnetic field, etc.) can alter the electrical resistance of a device. Such devices can be used as non-volatile information storage devices or as sensors.