Resumes
Resumes
Zeev Weinberg Phones & Addresses
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Palo Alto, CA
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Brooklyn, NY
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435 Central Park W APT 6H, New York, NY 10025
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65 Rio Robles E, San Jose, CA 95134
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12313 Miller Ave, Saratoga, CA 95070 (408) 725-2602
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Santa Clara, CA
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White Plains, NY
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Yorktown Heights, NY
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12313 Miller Ave, Saratoga, CA 95070 (619) 299-1079
Work
Position:
Production Occupations
Education
Degree:
High school graduate or higher
Publications
Us Patents
Rapid Thermal Annealing Of Silicon Dioxide For Reduced Electron Trapping
View pageUS Patent:
45669139, Jan 28, 1986
Filed:
Jul 30, 1984
Appl. No.:
6/636042
Inventors:
Marc H. Brodsky - Mt. Kisco NY
Zeev A. Weinberg - White Plains NY
Zeev A. Weinberg - White Plains NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21263
B23K 2700
B23K 2700
US Classification:
148 15
Abstract:
Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including decreased water content and reduced trapping of electrons, by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing inert gas, to heating radiation from a halogen lamp for a duration on the order of ten seconds to achieve annealing temperature in the range 600C. -800C.
Non-Volatile Memory Cell Using A Crystalline Storage Element With Capacitively Coupled Sensing
View pageUS Patent:
45353492, Aug 13, 1985
Filed:
Dec 31, 1981
Appl. No.:
6/336477
Inventors:
Zeev A. Weinberg - White Plains NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2978
G11C 1140
G11C 1140
US Classification:
357 236
Abstract:
The present invention relates to storage devices which utilize a floating single crystal electrode onto which elcetrons are injected to vary the capacitance of a device which includes capacitance contributions from a pair of insulator regions and that resulting from the uncharged floating single crystal electrode. The memory cell includes at least a pair of other electrodes one of which is utilized to provide two voltage levels to cause injection of electrons and provide an interrogation or read pulse. The other of the pair is utilized as a sense electrode which capacitively senses current when a read pulse is applied to the device via a control electrode. A second embodiment utilizes a pair of injector electrodes, a separate control electrode and a sense electrode in addition to the single crystal floating electrode. A memory array incorporating a device using the single crystal floating electrode is also disclosed.
Rapid Thermal Annealing Of Silicon Dioxide For Reduced Hole Trapping
View pageUS Patent:
45854920, Apr 29, 1986
Filed:
Jul 30, 1984
Appl. No.:
6/635391
Inventors:
Zeev A. Weinberg - White Plains NY
Donald R. Young - Ossining NY
Donald R. Young - Ossining NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21265
B23K 2700
B23K 2700
US Classification:
148 15
Abstract:
Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric breakdown of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing oxygen gas, to heating radiation from a halogen lamp for a duration on the order of 100 seconds to achieve annealing temperature on the order of 1000. degree. C. For reduced hole trapping, the ambient gas is oxygen and the annealing temperature is on the order of 1000. degree. C. for a duration on the order of 100 seconds, depending on the oxide thickness. Nitrogen, occurring at the silicon-silicon dioxide interface as a result of previous processing including a long anneal in nitrogen, increases the improvement of the silicon dioxide by the subsequent rapid thermal annealing in oxygen.