Resumes
Resumes
Zachary Gemmill Phones & Addresses
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1514 Mount Palomar Dr, San Jose, CA 95127
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1571 El Camino Real, Mountain View, CA 94040
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Portland, OR
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Gresham, OR
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Gresham, OR
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Big Oak Flat, CA
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Hayward, CA
Publications
Us Patents
E-Beam Voltage Potential Circuit Performance Library
View pageUS Patent:
6952106, Oct 4, 2005
Filed:
Oct 8, 2003
Appl. No.:
10/681544
Inventors:
William Ng - San Jose CA, US
Kevin Weaver - San Jose CA, US
Zachary Joshua Gemmill - Mountain View CA, US
Kevin Weaver - San Jose CA, US
Zachary Joshua Gemmill - Mountain View CA, US
Assignee:
National Semiconductor Corporation - Santa Clara CA
International Classification:
G01R031/307
US Classification:
324751, 324765
Abstract:
Point-by-point image contrast values are generated from secondary electron collection during unbiased electron or ion beam bombardment of an integrated circuit (IC) in a vacuum environment to quantify the physical and electrical integrity of connections within the device. These values are stored for each type of circuit cell under standard conditions to quantify and check the performance of individual cells on the device.
Built-In Design Edit Structures
View pageUS Patent:
7470553, Dec 30, 2008
Filed:
May 12, 2005
Appl. No.:
11/128409
Inventors:
Kevin Weaver - San Jose CA, US
Zachary J. Gemmill - Mountain View CA, US
Zachary J. Gemmill - Mountain View CA, US
Assignee:
National Semiconductor Corporation - Santa Clara CA
International Classification:
H01L 21/00
US Classification:
438 4, 438637, 438675, 257E21577
Abstract:
In an IC structure and method for debugging or adjusting the parameters of an IC circuitry, edit structures are formed in the IC device and are connected to desired portions of the IC circuitry buy forming vias through the passivation layer overlying the top metal layer and forming metal interconnects.
Vacuum Chamber Ac/Dc Probe
View pageUS Patent:
7659742, Feb 9, 2010
Filed:
Aug 17, 2007
Appl. No.:
11/893761
Inventors:
Steven Jacobson - Dublin CA, US
Duc huu Nguyen - San Jose CA, US
Zachary Gemmill - Mountain View CA, US
Duc huu Nguyen - San Jose CA, US
Zachary Gemmill - Mountain View CA, US
Assignee:
National Semiconductor Corporation - Santa Clara CA
International Classification:
G01R 31/26
US Classification:
324765
Abstract:
Features of non-vacuum AC/DC probe systems are combined with features of the DC vacuum chamber testers to provide an AC/DC probe system that can be used in a vacuum environment, such as a SEM vacuum chamber. Features of the DC vacuum chamber tester are modified to include new op-amp circuitry that provides the AC/DC testing functionality of the non-vacuum chamber systems, resulting in an AC/DC probe system that can be used in a vacuum environment.
Method Of Reducing The Time Required To Perform A Passive Voltage Contrast Test
View pageUS Patent:
7848562, Dec 7, 2010
Filed:
Sep 26, 2005
Appl. No.:
11/235794
Inventors:
Steven Jacobson - Dublin CA, US
Duc Huu Nguyen - San Jose CA, US
William Ng - San Jose CA, US
Zachary Joshua Gemmill - Mountain View CA, US
Usharani Bhimavarapu - San Jose CA, US
Kevin Weaver - San Jose CA, US
Duc Huu Nguyen - San Jose CA, US
William Ng - San Jose CA, US
Zachary Joshua Gemmill - Mountain View CA, US
Usharani Bhimavarapu - San Jose CA, US
Kevin Weaver - San Jose CA, US
Assignee:
National Semiconductor Corporation - Santa Clara CA
International Classification:
G06K 9/00
US Classification:
382145
Abstract:
The time required to perform a passive voltage contrast test of an area of interest of a layer of interest is substantially reduced by digitizing a passive voltage contrast image to form contrast data that represents the image, and comparing the contrast data to computer aided design (CAD) data that defines the semiconductor device.
Non-Destructive Method Of Measuring The Thickness Of A Semiconductor Wafer
View pageUS Patent:
6937351, Aug 30, 2005
Filed:
Nov 4, 2002
Appl. No.:
10/287326
Inventors:
Kevin Weaver - San Jose CA, US
Zachary Joshua Gemmill - Mountain View CA, US
Steven Jacobson - Dublin CA, US
Zachary Joshua Gemmill - Mountain View CA, US
Steven Jacobson - Dublin CA, US
Assignee:
National Semiconductor Corporation - Santa Clara CA
International Classification:
G01B011/06
US Classification:
356630, 356614
Abstract:
The thickness of a semiconductor wafer is non-destructively measured using infrared (IR) microscopy. The wafer is placed on a stage. A distance between the stage and a detector is then varied so that a first image of the wafer is focused on the detector. When focused, a first separation distance is measured. The distance between the stage and the detector is again varied so that a second image is focused on the detector. When again focused, a second separation distance is measured. The difference between the first and second separation distances is then determined and multiplied by the refractive index of light in silicon.