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Yusung Kim

from Portland, OR
Age ~43
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Also known as:
Youjung Kim, Kim Yu Sung, Sung Kim Yu, Kim Yusung, Kim Yusuk
Phone and address:
2090 NW 114Th Ave, Portland, OR 97229
Related to:
Rosa Kim, 43Kim Jung, 60Bumsoo Kim, 41Dan Kim, 41Ben TsaoChang Y Kim, 34Young Ok Kim, 44Suk C Kim, 68Juan Bang, 45Jung Chen Chun, 47Su Y Kim, 45Jung A Kim, 62Hyeyoung Kim, 41Kim C Suk
Connected to:
Abe Kim, 47Adrienne P Kim, 48Ae J KimAlana M Kim, 26Alissa A Kim, 32Allan H Kim, 54Alton Kim, 66Alvin U Kim, 52Analia Kim, 38Anatole S Kim, 66

Yusung Kim Phones & Addresses

  • 2090 NW 114Th Ave, Portland, OR 97229
  • West Lafayette, IN
  • Dallas, TX
  • Piscataway, NJ
  • W Lafayette, IN
  • Palisades Park, NJ

Resumes

Resumes

Yusung Kim Photo 1

Component Design Engineer

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Location:
Hillsboro, OR
Industry:
Semiconductors
Work:
Intel Corporation
Component Design Engineer
Purdue University Aug 2011 - Jul 2015
Graduate Research Assistant
Texas Instruments May 2012 - Aug 2012
Fram Designer
Purdue University Aug 2008 - Jul 2011
Graduate Teaching Assistant
Education:
Purdue University 2010 - 2015
Doctorates, Doctor of Philosophy, Computer Engineering, Philosophy Purdue University 2008 - 2010
Master of Science, Masters, Computer Engineering Rutgers University 1999 - 2007
Bachelors, Bachelor of Science, Computer Engineering
Skills:
Matlab
Simulations
Circuit Design
Vhdl
Very Large Scale Integration
Characterization
Vlsi
Latex
Perl
Perl Script
Cadence Virtuoso
Microsoft Excel
Microsoft Office
Languages:
Korean
English
Yusung Kim Photo 2

Yusung Kim

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Yusung Kim Photo 3

Yusung Kim

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Publications

Us Patents

Spin Orbit Torque Based Electronic Neuron

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US Patent:
20170330070, Nov 16, 2017
Filed:
Feb 28, 2017
Appl. No.:
15/445906
Inventors:
- West Lafayette IN, US
Sri Harsha Choday - San Diego CA, US
Yusung Kim - West Lafayette IN, US
Kaushik Roy - West Lafayette IN, US
Assignee:
Purdue Research Foundation - West Lafayette IN
International Classification:
G06N 3/063
H01L 27/22
G06F 7/58
G06N 3/04
H01L 43/08
H01L 43/06
Abstract:
An electronic neuron device that includes a thresholding unit which utilizes current-induced spin-orbit torque (SOT). A two-step switching scheme is implemented with the device. In the first step, a charge current through heavy metal (HM) places the magnetization of a nano-magnet along the hard-axis (i.e. an unstable point for the magnet). In the second step, the device receives a current (from an electronic synapse) which moves the magnetization from the unstable point to one of the two stable states. The polarity of the net synaptic current determines the final orientation of the magnetization. A resistive crossbar array may also be provided which functions as the synapse generating a bipolar current that is a weighted sum of the inputs of the device.
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Yusung Kim from Portland, OR, age ~43 Get Report