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Yury A Yuditsky

from Mountain View, CA
Age ~60

Yury Yuditsky Phones & Addresses

  • 49 Showers Dr, Mountain View, CA 94040 (650) 967-4849
  • 49 Showers Dr #272, Mountain View, CA 94040 (650) 917-9862
  • 1850 Ednamary Way, Mountain View, CA 94040 (650) 967-4849
  • Santa Clara, CA
  • Los Altos, CA
  • 49 Showers Dr APT N272, Mountain View, CA 94040

Work

Company: Kla-tencor 1994 Position: Ee

Education

Degree: Master of Science, Masters Specialities: Electronics

Skills

Semiconductors • Electronics • Semiconductor Industry • R&D • Sensors • Engineering Management • Product Development • Embedded Systems • Hardware Architecture • Cross Functional Team Leadership • Analog • Ic • Product Management • Mixed Signal • Optics • Thin Films • Integrated Circuits • Manufacturing • Research and Development • Algorithms • Soc • Verilog • Research and Development

Languages

English • Russian

Industries

Semiconductors

Resumes

Resumes

Yury Yuditsky Photo 1

Yury Yuditsky

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Kla-Tencor
Ee
Education:
Moscow State University of Transport (Miit) 1990 - 1993
Belarusian State University of Transport 1981 - 1986
Master of Science, Masters, Electronics Engineering
Skills:
Semiconductors
Electronics
Semiconductor Industry
R&D
Sensors
Engineering Management
Product Development
Embedded Systems
Hardware Architecture
Cross Functional Team Leadership
Analog
Ic
Product Management
Mixed Signal
Optics
Thin Films
Integrated Circuits
Manufacturing
Research and Development
Algorithms
Soc
Verilog
Research and Development
Languages:
English
Russian

Publications

Us Patents

Extended Defect Sizing Range For Wafer Inspection

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US Patent:
20130208269, Aug 15, 2013
Filed:
Feb 9, 2012
Appl. No.:
13/369294
Inventors:
Zhongping Cai - Fremont CA, US
Yury Yuditsky - Mountain View CA, US
Anatoly Romanovsky - Palo Alto CA, US
Alexander Slobodov - San Jose CA, US
Assignee:
KLA-TENCOR CORPORATION - Milpitas CA
International Classification:
G01N 21/88
US Classification:
3562375
Abstract:
Various embodiments for extended defect sizing range for wafer inspection are provided.

Wafer Inspection

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US Patent:
20130016346, Jan 17, 2013
Filed:
Jul 9, 2012
Appl. No.:
13/544954
Inventors:
Anatoly Romanovsky - Palo Alto CA, US
Ivan Maleev - Pleasanton CA, US
Daniel Kavaldjiev - San Jose CA, US
Yury Yuditsky - Mountain View CA, US
Dirk Woll - San Jose CA, US
Stephen Biellak - Sunnyvale CA, US
Assignee:
KLA-TENCOR CORPORATION - Milpitas CA
International Classification:
G01N 21/956
US Classification:
3562375, 2504581
Abstract:
Systems configured to inspect a wafer are provided.

Wafer Inspection

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US Patent:
20180164228, Jun 14, 2018
Filed:
Jan 29, 2018
Appl. No.:
15/882946
Inventors:
- Milpitas CA, US
Ivan Maleev - Pleasanton CA, US
Daniel Kavaldjiev - San Jose CA, US
Yury Yuditsky - Mountain View CA, US
Dirk Woll - San Jose CA, US
Stephen Biellak - Sunnyvale CA, US
Mehdi Vaez-Iravani - Los Gatos CA, US
Guoheng Zhao - Palo Alto CA, US
International Classification:
G01N 21/95
G01N 21/47
G01N 21/956
G01N 21/88
Abstract:
Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to direct pulses of light to an area on a wafer; a scanning subsystem configured to scan the pulses of light across the wafer; a collection subsystem configured to image pulses of light scattered from the area on the wafer to a sensor, wherein the sensor is configured to integrate a number of the pulses of scattered light that is fewer than a number of the pulses of scattered light that can be imaged on the entire area of the sensor, and wherein the sensor is configured to generate output responsive to the integrated pulses of scattered light; and a computer subsystem configured to detect defects on the wafer using the output generated by the sensor.

System And Method For Compensation Of Illumination Beam Misalignment

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US Patent:
20170336329, Nov 23, 2017
Filed:
Apr 3, 2017
Appl. No.:
15/477885
Inventors:
- Milpitas CA, US
Zhiwei Xu - Sunnyvale CA, US
Timothy Swisher - Hayward CA, US
Kwan Auyeung - Fremont CA, US
Yury Yuditsky - Mountain View CA, US
International Classification:
G01N 21/88
G01N 21/95
Abstract:
A system includes a beam steering assembly configured to adjust an incident beam to form a corrected beam; a beam monitoring assembly configured to generate monitoring data for the corrected beam including one or more offset parameters of the corrected beam; and a controller configured to store one or more zero parameters of the corrected beam, calculate at least one difference between the one or more zero parameters and the one or more offset parameters of the corrected beam, determine one or more beam position adjustments of the incident beam based on the at least one difference between the one or more zero parameters and the one or more offset parameters of the corrected beam, and direct the beam steering assembly via one or more motor drivers to actuate one or more motors to adjust the incident beam to form the corrected beam.

Wafer Inspection

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US Patent:
20150369753, Dec 24, 2015
Filed:
Aug 27, 2015
Appl. No.:
14/838194
Inventors:
- Milpitas CA, US
Ivan Maleev - Pleasanton CA, US
Daniel Kavaldjiev - San Jose CA, US
Yury Yuditsky - Mountain View CA, US
Dirk Woll - San Jose CA, US
Stephen Biellak - Sunnyvale CA, US
Mehdi Vaez-Iravani - Los Gatos CA, US
Guoheng Zhao - Palo Alto CA, US
International Classification:
G01N 21/88
G01N 21/95
Abstract:
Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to direct pulses of light to an area on a wafer; a scanning subsystem configured to scan the pulses of light across the wafer; a collection subsystem configured to image pulses of light scattered from the area on the wafer to a sensor, wherein the sensor is configured to integrate a number of the pulses of scattered light that is fewer than a number of the pulses of scattered light that can be imaged on the entire area of the sensor, and wherein the sensor is configured to generate output responsive to the integrated pulses of scattered light; and a computer subsystem configured to detect defects on the wafer using the output generated by the sensor.

Method And Apparatus For High Speed Acquisition Of Moving Images Using Pulsed Illumination

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US Patent:
20140158864, Jun 12, 2014
Filed:
Dec 4, 2013
Appl. No.:
14/096911
Inventors:
- Milpitas CA, US
Yung-Ho Chuang - Cupertino CA, US
Yury Yuditsky - Mountain View CA, US
Assignee:
KLA-Tencor Corporation - Milpitas CA
International Classification:
H04N 3/14
US Classification:
2502081
Abstract:
A method of operating an image sensor with a continuously moving object is described. In this method, a timed delay integration mode (TDI-mode) operation can be performed during an extended-time illumination pulse. During this TDI-mode operation, charges stored by pixels of the image sensor are shifted only in a first direction, and track the image motion. Notably, a split-readout operation is performed only during non-illumination. During this split-readout operation, first charges stored by first pixels of the image sensor are shifted in the first direction and second charges stored by second pixels of the image sensor are concurrently shifted in a second direction, the second direction being opposite to the first direction.
Yury A Yuditsky from Mountain View, CA, age ~60 Get Report