Yingping Ping Zheng

7052959, May 30, 2006

Jan 8, 2004

10/752772

Gennadiy Nemtsev - Stoughton MA, US
Yingping Zheng - North Kingstown RI, US
Rajesh S. Nair - Chandler AZ, US

Semiconductor Components Industries, LLC - Phoenix AZ

H01L 21/336

438257, 438301

An EPROM cell includes a control gate and a control transistor. A portion of the control transistor is formed as a portion of the control gate.

7365383, Apr 29, 2008

Mar 27, 2006

11/389639

Gennadiy Nemtsev - Stoughton MA, US
Yingping Zheng - North Kingstown RI, US
Rajesh S. Nair - Chandler AZ, US

Semiconductor Components Industries, L.L.C. - Phoenix AZ

H01L 27/108
H01L 29/76
H01L 29/94
H01L 31/119

257296, 257 68, 257288, 257E21103, 257E21209, 257E21422, 257E21694

An EPROM cell includes a control gate and a control transistor. A portion of the control transistor is formed as a portion of the control gate.

8207037, Jun 26, 2012

Oct 31, 2007

11/931606

Hui Wang - East Greenwich RI, US
Gennadiy Nemtsev - Stoughton MA, US
Yingping Zheng - East Greenwich RI, US
Gordon M. Grivna - Mesa AZ, US

Semiconductor Components Industries, LLC - Phoenix AZ

H01L 21/8236

438268, 438270

A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A semiconductor material includes an epitaxial layer disposed on a semiconductor substrate. A trench having an upper portion and a lower portion is formed in the epitaxial layer. A portion of a field plate is formed in the lower portion of the trench, wherein the field plate is electrically isolated from trench sidewalls. A gate structure is formed in the upper portion of the trench, wherein a gate oxide is formed from opposing sidewalls of the trench. Gate electrodes are formed adjacent to the gate oxide formed from the opposing sidewalls and a dielectric material is formed adjacent to the gate electrode. Another portion of the field plate is formed in the upper portion of the trench and cooperates with the portion of the field plate formed in the lower portion of the trench to form the field plate.

20040245638, Dec 9, 2004

Jun 6, 2003

10/454870

Gennadiy Nemtsev - Stoughton MA, US
Hui Wang - North Kingstown RI, US
Yingping Zheng - North Kingstown RI, US
Rajesh Nair - Chandler AZ, US

Semiconductor Components Industries, LLC.

H01L023/48

257/758000

A transistor () is formed as a matrix of transistor cells () that have drain metal strips () for contacting drains () of the transistor cells and source metal strips () for contacting sources () of the transistor cells. An interconnect layer () overlying the matrix of transistor cells has first portions () that contact one the drain metal strips with first and second vias () and second portions () that contact one of the source metal strips with third and fourth vias ().

20090108343, Apr 30, 2009

Oct 31, 2007

11/931994

Gennadiy Nemtsev - Stoughton MA, US
Hui Wang - East Greenwich RI, US
Yingping Zheng - East Greenwich RI, US
Gordon M. Grivna - Mesa AZ, US

H01L 29/78
H01L 21/336

257330, 438270, 257E2141, 257E29262

A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A semiconductor material includes an epitaxial layer disposed on a semiconductor substrate. Field plate trenches extend into the semiconductor material and field plates are formed in the field plate trenches. A gate trench is formed between two adjacent field plate trenches and another gate trench is formed adjacent one of the field plate trenches. Gate structures are formed in the gate trenches, wherein each gate structure includes a gate oxide and a gate conductor. A conductor electrically couples the field plates together.