Ying Yu

6436192, Aug 20, 2002

Jan 11, 2000

09/481055

Ling Chen - Sunnyvale CA
Joseph Yudovsky - Palo Alto CA
Ying Yu - Cupertino CA
Lawrence C. Lei - Milpitas CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118696, 118728, 118500

A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is introduced into the vacuum chamber on the support member, the pressure is increased to at least about one Torr, and the support member is lifted into a shadow ring that has a frustoconical inner cavity constructed to funnel the wafer to a centered, aligned position.

6586343, Jul 1, 2003

Jul 9, 1999

09/350817

Henry Ho - San Jose CA
Ying Yu - Cupertino CA
Steven A. Chen - Fremont CA

Applied Materials, Inc. - Santa Clara CA

H01L 2131

438758, 438778, 438786, 438787, 438791, 118719, 118900

A method and apparatus for directing a process gas through a processing apparatus, such as a vapor deposition chamber. The apparatus comprises a pumping plate for a processing chamber having an annular body member wherein said body member has a first portion and a second defining a circumferential edge and a central opening. The first portion comprises a sidewall of the circumferential edge having a plurality of circumferentially spaced through holes and the second portion has comprises a lateral portion that protrudes from the circumferential edge, such that, in a processing chamber, the first portion defines a first gas flow region comprising the central opening and a second gas flow region comprising the lateral portion of the second portion.

6645884, Nov 11, 2003

Jul 9, 1999

09/350810

Michael X. Yang - Fremont CA
Karl Littau - Palo Alto CA
Steven A. Chen - Fremont CA
Henry Ho - San Jose CA
Ying Yu - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

H01L 2102

438791, 438584, 438680, 438758, 438774, 438775

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

6797643, Sep 28, 2004

Oct 23, 2002

10/279367

Juan Carlos Rocha-Alvarez - Sunnyvale CA
Maosheng Zhao - Santa Clara CA
Ying Yu - Cupertino CA
Shankar Venkataraman - Santa Clara CA
Srinivas D. Nemani - Sunnyvale CA
Li-Qun Xia - Santa Clara CA

Applied Materials Inc. - Santa Clara CA

H01L 2131

438758, 438622, 438623, 438767, 438790, 438633

A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture to the deposition chamber, in which the gas mixture is comprised of one or more cyclic organosilicon compounds, one or more aliphatic compounds and one or more oxidizing gases. The method further includes reacting the gas mixture in the presence of an electric field to form the low dielectric constant film on the semiconductor substrate. The electric field is generated using a very high frequency power having a frequency in a range of about 20 MHz to about 100 MHz.

6820298, Nov 23, 2004

Apr 19, 2001

09/838959

John M White - Hayward CA
Ying Yu - Cupertino CA
Michael Sugarman - San Francisco CA

Applied Materials, Inc. - Santa Clara CA

B08B 104

15 77, 15 883, 15 211, 15179, 4033221, 403325

A brush mounting system for a wafer scrubbing device includes a brush mandrel and a mounting assembly on which the brush mandrel is mounted. The mounting assembly includes a mounting member adapted to be mounted to a wall of the wafer scrubbing device, and a bearing secured to the mounting member. A brush support is rotatably mounted on the bearing and has an outer end that includes a contact surface adapted to contact the brush mandrel. The contact surface has a spherical profile. The brush mandrel includes a corresponding contact surface having a spherical profile, so that the brush mandrel and the mounting assembly form a spherical joint at the point of contact.

7932402, Apr 26, 2011

Jul 15, 2008

12/218383

Pierre-Jean Colson - San Francisco CA, US
Ying Yu - Sunnyvale CA, US
Daniel D. Long - San Francisco CA, US
Ioanna Stergiades - San Francisco CA, US

Theravance, Inc. - San Francisco CA

C07D 209/52

548452

The invention provides an efficient method for preparing 3-endo-(8-azabicyclo[3. 2. 1]oct-3-yl)benzamide by hydrogenation, under controlled conditions, of an amino-protected 3-(8-azabicyclo[3. 2. 1]oct-2-en-3-yl)benzamide intermediate in which the amino-protecting group is removable by catalytic hydrogenation.

8106232, Jan 31, 2012

Dec 10, 2008

12/331659

Sean G. Trapp - San Francisco CA, US
Michael R. Leadbetter - San Leandro CA, US
Daniel D. Long - San Francisco CA, US
John R. Jacobsen - San Mateo CA, US
Priscilla Van Dyke - San Francisco CA, US
Pierre-Jean Colson - San Francisco CA, US
Miroslav Rapta - Sunnyvale CA, US
Ying Yu - Sunnyvale CA, US

Theravance, Inc. - South San Francisco CA

C07C 229/00
C07C 62/00
C07C 65/00

560 45, 562466

The invention provides 3-carboxypropyl-aminotetralin compounds of formula (I):.

8247559, Aug 21, 2012

Mar 14, 2011

13/047309

Pierre-Jean Colson - San Francisco CA, US
Ying Yu - Sunnyvale CA, US
Daniel D. Long - San Francisco CA, US
Ioanna Stergiades - San Francisco CA, US

Theravance, Inc. - South San Francisco CA

C07D 451/02

546124

The invention provides an efficient method for preparing 3-endo-(8-azabicyclo[3. 2. 1]oct-3-yl)benzamide by hydrogenation, under controlled conditions, of an amino-protected 3-(8-azabicyclo[3. 2. 1]oct-2-en-3-yl)benzamide intermediate in which the amino-protecting group is removable by catalytic hydrogenation.