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Ying Hui Phones & Addresses

  • West Sacramento, CA
  • San Francisco, CA
  • 683 27Th Ave, San Francisco, CA 94121

Resumes

Resumes

Ying Hui Photo 1

Registered Nurse

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Location:
San Francisco, CA
Industry:
Religious Institutions
Work:
Sojourn Chaplaincy / San Francisco General Hospital and Trauma Center
Registered Nurse
Education:
University of California, San Francisco 2011 - 2014
Masters
San Francisco State University 2009 - 2010
Master of Science, Masters, Nursing
University of California
Skills:
Bls
Pediatrics
Nursing
Pals
Healthcare
Clinical Research
Nursing Education
Hospitals
Acls
Medical/Surgical
Patient Advocacy
Acute Care
Ying Hui Photo 2

Ying Hui

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Ying Hui Photo 3

Ying Hui

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Publications

Us Patents

Method And Apparatus For Improving Sidewall Coverage During Sputtering In A Chamber Having An Inductively Coupled Plasma

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US Patent:
20050205414, Sep 22, 2005
Filed:
May 16, 2005
Appl. No.:
11/130493
Inventors:
Kenny Ngan - Fremont CA, US
Ying Hui - Fremont CA, US
Seshadri Ramaswami - San Jose CA, US
International Classification:
C23C014/00
C23C014/32
C25B011/00
C25B009/00
H01L021/4763
C25B013/00
US Classification:
204192150, 204298250
Abstract:
Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma. Consequently, it has been found that good sidewall coverage is achieved in the latter part of the deposition.

Method And Apparatus For Improving Sidewall Coverage During Sputtering In A Chamber Having An Inductively Coupled Plasma

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US Patent:
6899799, May 31, 2005
Filed:
Oct 2, 2002
Appl. No.:
10/263167
Inventors:
Kenny King-Tai Ngan - Fremont CA, US
Ying Yin Hui - Fremont CA, US
Seshadri Ramaswami - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C014/35
US Classification:
20429825, 20429803, 20429806
Abstract:
Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma. Consequently, it has been found that good sidewall coverage is achieved in the latter part of the deposition.
Ying Xie Hui from West Sacramento, CA, age ~59 Get Report