Resumes
Resumes
Yibin Gao Phones & Addresses
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Milpitas, CA
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Union City, CA
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San Jose, CA
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Columbus, OH
Publications
Us Patents
Thermoelectric Figure Of Merit Enhancement By Modification Of The Electronic Density Of States
View pageUS Patent:
20110248209, Oct 13, 2011
Filed:
Mar 11, 2011
Appl. No.:
13/045998
Inventors:
John Androulakis - Evanston IL, US
Yibin Gao - Columbus OH, US
Steven N. Girard - Chicago IL, US
Joseph Heremans - Upper Arlington OH, US
Christopher Jaworski - Columbus OH, US
Mercouri G. Kanatzidis - Wilmette IL, US
Yibin Gao - Columbus OH, US
Steven N. Girard - Chicago IL, US
Joseph Heremans - Upper Arlington OH, US
Christopher Jaworski - Columbus OH, US
Mercouri G. Kanatzidis - Wilmette IL, US
Assignee:
NORTHWESTERN UNIVERSITY - Evanston IL
THE OHIO STATE UNIVERSITY - Columbus OH
THE OHIO STATE UNIVERSITY - Columbus OH
International Classification:
H01B 1/02
C09K 5/14
C09K 5/14
US Classification:
252 71
Abstract:
A thermoelectric material and a method of using a thermoelectric material is provided. The thermoelectric material can include at least one compound. For example, the at least one compound may be a Group IV-VI compound such as lead telluride. The at least one compound may further include one or more dopants such as sodium, potassium, and thallium. The method of using a thermoelectric material can include exposing at least one portion of the at least one compound to a temperature greater than about 700 K.
High Temperature Hall Sensor For Magnetic Position Sensing
View pageUS Patent:
20140266159, Sep 18, 2014
Filed:
Mar 14, 2014
Appl. No.:
14/211990
Inventors:
- Columbus OH, US
Roberto C. Myers - Columbus OH, US
Yibin Gao - Columbus OH, US
Zihao Yang - Columbus OH, US
Roberto C. Myers - Columbus OH, US
Yibin Gao - Columbus OH, US
Zihao Yang - Columbus OH, US
International Classification:
G01R 33/00
G01R 33/07
G01R 33/07
US Classification:
3242072
Abstract:
A position sensor comprises a group III-nitride Hall effect sensor arranged to measure magnetic field from a magnet wherein the group III-nitride Hall effect sensor and the magnet are arranged to move relative to one another in response to movement of an element whose motion is to be monitored. The electrically conductive layer of the group III-nitride Hall effect sensor may comprise a two-dimensional electron gas (2DEG) defined by an AlGaN/GaN interface where x>0 and in some embodiments x=1 (i.e. an A1N/GaN interface). Disclosed position measurement methods comprise measuring position or speed of the element being monitored using such a position sensor in an environment at a temperature of at least 300 C., and in some embodiments at least 350 C.