Resumes
Resumes
Wayne Babie Phones & Addresses
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13 Four Winds Dr, Poughkeepsie, NY 12603 (845) 462-0251
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Lagrangeville, NY
Publications
Us Patents
Unique Process Chemistry For Etching Organic Low-K Materials
View pageUS Patent:
6841483, Jan 11, 2005
Filed:
Feb 12, 2001
Appl. No.:
09/782185
Inventors:
Helen H. Zhu - Fremont CA, US
James R. Bowers - Brookfield CT, US
Ian J. Morey - Singapore, SG
Wayne Babie - Poughkeepsie NY, US
Michael Goss - Mendon MA, US
James R. Bowers - Brookfield CT, US
Ian J. Morey - Singapore, SG
Wayne Babie - Poughkeepsie NY, US
Michael Goss - Mendon MA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21302
US Classification:
438710, 438714, 438723
Abstract:
Method for etching a feature in an integrated circuit wafer with minimized effect of micromasking. The method introduces a flow of etchant gas including a fluorocarbon gas to the wafer, and uses the etchant gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to etch at least a portion of the feature in the wafer. Disassociation of the fluorocarbon into fluorine and hydrocarbon species performs two functions. The fluorine species prevents or significantly reduces sputtered hardmask components from depositing on the floor of the etched feature during etching. The hydrocarbon species acts to form a passivation layer on the sidewalls of the feature.
Selective Silicon Nitride Plasma Etching
View pageUS Patent:
51887045, Feb 23, 1993
Filed:
May 9, 1991
Appl. No.:
7/700871
Inventors:
Wayne T. Babie - Poughkeepsie NY
Kenneth L. Devries - Hopewell Junction NY
Bang C. Nguyen - Wappingers Falls NY
Chau-Hwa J. Yang - Hopewell Junction NY
Kenneth L. Devries - Hopewell Junction NY
Bang C. Nguyen - Wappingers Falls NY
Chau-Hwa J. Yang - Hopewell Junction NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B44C 122
C03C 1500
C03C 2506
C03C 1500
C03C 2506
US Classification:
156643
Abstract:
A two step method of etching a silicon nitride layer carrying a surface oxygen film from a substrate in a plasma reactor employs the steps of (1) a breakthrough step of employing a plasma of oxygen free etchant gases to break through and to remove the surface oxygen containing film from the surface of the silicon nitride layer, and (2) a main step of etching the newly exposed silicon nitride with etchant gases having high selectivity with respect to the silicon oxide underlying the silicon nitride. The plasma etching can be performed while employing magnetic-enhancement of the etching. The plasma etching is performed in a plasma reactor comprising a low pressure, single wafer tool. Plasma etching is performed while employing magnetic-enhancement of the etching. The etchant gases include a halide such as a bromide and a fluoride in the breakthrough step.
Selective Silicon Nitride Plasma Etching Process
View pageUS Patent:
54317720, Jul 11, 1995
Filed:
Oct 19, 1992
Appl. No.:
7/963890
Inventors:
Wayne T. Babie - Poughkeepsie NY
Kenneth L. Devries - Hopewell Junction NY
Bang C. Nguyen - Wappingers Falls NY
Chau-Hwa J. Yang - Hopewell Junction NY
Kenneth L. Devries - Hopewell Junction NY
Bang C. Nguyen - Wappingers Falls NY
Chau-Hwa J. Yang - Hopewell Junction NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B44C 122
C03C 1500
C03C 2506
C03C 1500
C03C 2506
US Classification:
1566431
Abstract:
A two step method of etching a silicon nitride layer carrying a surface oxygen film from a substrate in a plasma reactor employs the steps of (1) a breakthrough step of employing a plasma of oxygen free etchant gases to break through and to remove the surface oxygen containing film from the surface of the silicon nitride layer, and (2) a main step of etching the newly exposed silicon nitride with etchant gases having high selectivity with respect to the silicon oxide underlying the silicon nitride. The plasma etching can be performed while employing magnetic- enhancement of the etching. The plasma etching is performed in a plasma reactor comprising a low pressure, single wafer tool. Plasma etching is performed while employing magnetic-enhancement of the etching. The etchant gases include a halide such as a bromide and a fluoride in the breakthrough step.