Vuong Tan Nguyen

6423947, Jul 23, 2002

Jun 29, 2001

09/896525

Jeffrey D. Womack - Pleasanton CA
Vuong P. Nguyen - San Jose CA
Devendra Kumar - Los Altos CA
Jack S. Kasahara - Los Gatos CA
Sokol Ibrani - Pleasanton CA

FSI International, Inc. - Chaska MN

H05B 514

219390, 219405, 219411, 392416, 118724, 118725

A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.

6838115, Jan 4, 2005

Jul 11, 2001

09/903114

Devendra Kumar - Los Altos CA, US
Jeffrey D. Womack - Lake Oswego OR, US
Vuong P. Nguyen - Allen TX, US
Jack S. Kasahara - Los Gatos CA, US
Sokol Ibrani - Pleasanton CA, US

FSI International, Inc. - Chaska MN

B05D 512
B05D 302

427 58, 427240, 4273722, 4273741, 427379, 4273855, 4273984, 427350

Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

20040047993, Mar 11, 2004

Sep 5, 2003

10/656640

Devendra Kumar - Los Altos CA, US
Jeffrey Womack - Lake Oswego OR, US
Vuong Nguyen - Allen TX, US
Jack Kasahara - Los Gatos CA, US
Sokol Ibrani - Pleasanton CA, US

B05D003/12
B05D003/02
B32B031/00

427/294000, 427/374100, 427/372200, 427/350000, 156/272200, 156/273300, 118/300000

Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

54278201, Jun 27, 1995

Jul 16, 1993

8/092728

Michael B. Biche - Union City CA
Vuong P. Nguyen - San Jose CA

Semiconductor Systems, Inc. - Fremont CA

B05B 312
B67D 562
B05C 1302

427240

An apparatus and method for dispensing liquid at a controlled temperature in a spin coating or developer machine are disclosed. The apparatus is a thermal control line that has an inner core wall that encloses at least one conduit for a liquid dispense line and an outer annular wall that encloses at least one chamber for circulation of coolant. The inner core wall and the outer annular wall are formed of such materials as to permit efficient heat exchange between the coolant and the liquid. The coolant is circulated in the annular chamber at a rate sufficient to maintain the dispensed liquid at a desired temperature.

63071843, Oct 23, 2001

Jul 12, 1999

9/351586

Jeffrey D. Womack - Pleasanton CA
Vuong P. Nguyen - San Jose CA
Devendra Kumar - Los Altos CA
Jack S. Kasahara - Los Gatos CA
Sokol Ibrani - Pleasanton CA

FSI International, Inc. - Chaska MN

F27B 514

219390

A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.

20220334985, Oct 20, 2022

Apr 16, 2021

17/232944

- Singapore, SG
Kenny Wu - San Jose CA, US
Ravi Shenoy - San Jose CA, US
Gregorio Gervasio, JR. - San Jose CA, US
Lalit Chhabra - San Jose CA, US
Mark Karnowski - Irvine CA, US
James Winston Smart - Irvine CA, US
Vuong Cao Nguyen - Irvine CA, US

G06F 13/16
G06F 13/28
G06F 12/1009
G06F 12/0806

Systems and methods relate to a bus adapter for a storage network. The bus adaptor includes a context memory comprising a first storage for uncacheable exchange resource indicators (XRI) and a second storage for cacheable XRI. The bus adapter also includes a host backing store unit configured to provide access to the different tier memories present locally or externally in the host memory extension using several caching sub-units and with the capability of an optional pinning operation for the cacheable XRI based upon at least one of input/output phase, first in line up to a limit, a region of a virtual context address associated with the cacheable XRI indicators, a protocol associated with the cacheable XRI, a size of a transaction, or work queue information.