Verle Aebi Phones & Addresses
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220 Laurel St, Menlo Park, CA 94025 (650) 323-8135
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Portola Valley, CA
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Salem, OR
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Mountain View, CA
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McMinnville, OR
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Palo Alto, CA
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220 Laurel St, Menlo Park, CA 94025
Work
Position:
Professional/Technical
Education
Degree:
Graduate or professional degree
Publications
Us Patents
Electron Bombarded Passive Pixel Sensor Imaging
View pageUS Patent:
6657178, Dec 2, 2003
Filed:
Feb 14, 2001
Appl. No.:
09/784621
Inventors:
Verle W. Aebi - Menlo Park CA
Assignee:
Intevac, Inc. - Santa Clara CA
International Classification:
H01J 4014
US Classification:
250214VT, 313524
Abstract:
A low light level image directed to a photocathode in a vacuum causes release of electron which bombard a CMOS imager including passive pixel sensors which in turn generates an electronic image which is fed out of the vacuum and is used to create useful images corresponding to the low level input image. A camera and other low light imaging devices are described.
Low Energy Portable Low-Light Camera With Wavelength Cutoff
View pageUS Patent:
8421012, Apr 16, 2013
Filed:
Aug 31, 2010
Appl. No.:
12/873225
Inventors:
Verle W. Aebi - Menlo Park CA, US
Assignee:
Intevac, Inc. - Santa Clara CA
International Classification:
H01L 31/00
US Classification:
250332
Abstract:
A sensor for night vision applications is provided, wherein the sensor comprises a semiconductor absorption layer of composition that limits long wavelength response cutoff to between 1. 25 to 1. 4 μm wavelength. The selection of this cutoff frequency provides improved dark current performance, thereby requiring less cooling of the sensor. Consequently, energy consumption is reduced, as the sensor does not require active cooling, so that the sensor is particularly beneficial for mobile night vision applications where battery weight is of high importance.
Photocathode Structure And Operation
View pageUS Patent:
20070034987, Feb 15, 2007
Filed:
Jun 1, 2005
Appl. No.:
11/142805
Inventors:
Kenneth Costello - Union City CA, US
Verle Aebi - Menlo Park CA, US
Verle Aebi - Menlo Park CA, US
International Classification:
H01L 29/00
US Classification:
257532000
Abstract:
A novel photocathode employing a rectifying junction is described that permits color imaging extending applications for photocathodes in various instruments and night vision devices.
Backside-Thinned Image Sensor Using Al2O3 Surface Passivation
View pageUS Patent:
20130105928, May 2, 2013
Filed:
Sep 14, 2012
Appl. No.:
13/620476
Inventors:
Kenneth A. COSTELLO - Union City CA, US
Edward YIN - Cupertino CA, US
Michael Wayne PELCZYNSKI - Hayward CA, US
Verle W. AEBI - Menlo Park CA, US
Edward YIN - Cupertino CA, US
Michael Wayne PELCZYNSKI - Hayward CA, US
Verle W. AEBI - Menlo Park CA, US
Assignee:
INTEVAC, INC. - Santa Clara CA
International Classification:
H01L 31/0232
H01L 31/0216
H01L 31/0216
US Classification:
257432, 257437, 438 73, 257E31121, 257E31119
Abstract:
A structure and method of manufacture is disclosed for a backside thinned imager that incorporates a conformal, AlO, low thermal budget, surface passivation. This passivation approach facilitates fabrication of backside thinned, backside illuminated, silicon image sensors with thick silicon absorber layer patterned with vertical trenches that are formed by etching the exposed back surface of a backside-thinned image sensor to control photo-carrier diffusion and optical crosstalk. A method of manufacture employing conformal, AlO, surface passivation approach is shown to provide high quantum efficiency and low dark current while meeting the thermal budget constraints of a finished standard foundry-produced CMOS imager.
Transferred Electron Iii-V Semiconductor Photocathode
View pageUS Patent:
50478214, Sep 10, 1991
Filed:
Mar 15, 1990
Appl. No.:
7/494044
Inventors:
Kenneth A. Costello - Palo Alto CA
William E. Spicer - Stanford CA
Verle W. Aebi - Menlo Park CA
William E. Spicer - Stanford CA
Verle W. Aebi - Menlo Park CA
Assignee:
Intevac, Inc. - Santa Clara CA
International Classification:
H01L 2714
H01L 3100
H01L 29161
H01L 4500
H01L 3100
H01L 29161
H01L 4500
US Classification:
357 30
Abstract:
An improved transferred electron III-V semiconductor photocathode comprising an aluminum contact pad and an aluminum grid structure that improves quantum efficiency by removing a major obstacle to electrons escaping into the vacuum and controls dark spot blooming caused by overly bright photon emission sources.
Method Of Manufacturing A Feedback Limited Microchannel Plate
View pageUS Patent:
53911016, Feb 21, 1995
Filed:
Oct 12, 1993
Appl. No.:
8/135014
Inventors:
Verle W. Aebi - Menlo Park CA
Kenneth A. Costello - East Palo Alto CA
Kenneth A. Costello - East Palo Alto CA
Assignee:
Intevac, Inc. - Santa Clara CA
International Classification:
H01J 912
US Classification:
445 50
Abstract:
A method of manufacturing a low noise microchannel plate which limits feedback includes creating a conductive layer on the output side of the microchannel plate so that portions of the open areas in the output end are closed off.
Hybrid Photomultiplier Tube With High Sensitivity
View pageUS Patent:
53748263, Dec 20, 1994
Filed:
Jul 14, 1993
Appl. No.:
8/091764
Inventors:
Ross A. LaRue - Milpitas CA
Kenneth A. Costello - Union City CA
Verle W. Aebi - Menlo Park CA
Kenneth A. Costello - Union City CA
Verle W. Aebi - Menlo Park CA
Assignee:
Intevac, Inc. - Santa Clara CA
International Classification:
H01J 3130
US Classification:
250397
Abstract:
A focused electron/bombarded (FEB) ion detector comprising an MCP, focusing means, and a collection anode disposed in a detector body. The collector anode includes a diode for receiving the focused output electron beam from the MCP. The gain between the input ion current to the MCP and the detector output signal from the diode is on the order of 1-100 million, depending on the device configuration and applied biasing voltages. A hybrid photomultiplier tube includes a photocathode, a photodiode for collecting and multiplying electrons emitted by the photocathode and providing an output signal and electrodes for focusing the electrons on the photodiode. A vacuum envelope encloses a vacuum region between photocathode and the detector. A conductor disposed on or adjacent to a sidewall of the vacuum envelope reduces the effect of electrical charges on the inside wall of the vacuum envelope on the trajectories of the electrons.
Focused Electron-Bombarded Detector
View pageUS Patent:
53269780, Jul 5, 1994
Filed:
Dec 17, 1992
Appl. No.:
7/992430
Inventors:
Verle Aebi - Menlo Park CA
Ross A. LaRue - Milpitas CA
Kenneth Costello - Union City CA
Stephen J. Bartz - Foster City CA
Ross A. LaRue - Milpitas CA
Kenneth Costello - Union City CA
Stephen J. Bartz - Foster City CA
Assignee:
Intevac, Inc. - Santa Clara CA
International Classification:
H01J 37252
US Classification:
250397
Abstract:
A focused electron-bombarded (FEB) ion detector comprising an MCP, focusing means, and a collection anode disposed in a detector body. The collection anode includes a diode for receiving the focused output electron beam from the MCP. The gain between the input ion current to the MCP and the detector output signal from the diode is on the order of 1-100 million, depending on the device configuration and applied biasing voltages.