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Vasudev Venkatesan

from San Jose, CA
Age ~57
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Also known as:
Vasudev Vankatesan, Vasudey Venkatesan, Vasudev Vasudev, Basudev Venkatesah
Phone and address:
7030 Apple Grove Ct, San Jose, CA 95135
(480) 961-7803
Related to:
Milind VasudevAruna Vasudev, 51
Connected to:
Anitha Venkatesh, 50Ashwin T Venkateswaran, 40Balasubramanian Venkatesan, 62Balasubramanian Venkateswaran, 50Bharathi Venkatesh, 54Chaitali Venkatesh, 50Chandrase Venkatesan, 55Ganesan Venkatesan, 38Geeta Venkatesh, 53Gomathi Venkatesan, 79

Vasudev Venkatesan Phones & Addresses

  • 7030 Apple Grove Ct, San Jose, CA 95135 (480) 961-7803
  • 1267 Lakeside Dr, Sunnyvale, CA 94085 (408) 720-9733
  • 4855 Buffalo St, Chandler, AZ 85226 (480) 961-7803
  • Phoenix, AZ
  • 5300 5Th St, Pgh, PA 15232 (412) 681-4893
  • Pittsburgh, PA
  • Raleigh, NC
  • 4855 W Buffalo St, Chandler, AZ 85226 (480) 861-0640

Work

Position: Precision Production Occupations

Education

Degree: High school graduate or higher

Emails

v***[email protected]

Resumes

Resumes

Vasudev Venkatesan Photo 1

Senior Director, Service Marketing

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Applied Materials Feb 2012 - Aug 2015
Director, Product Management
Veeco Instruments Feb 2012 - Aug 2015
Senior Director, Service Marketing
Kla-Tencor 2005 - 2011
Product Marketing Manager
Motorola 1993 - 2003
Device and Process Integration Engineering
Education:
Carnegie Mellon University 2005
Master of Business Administration, Masters Carnegie Mellon University 2003 - 2005
Master of Business Administration, Masters North Carolina State University 1993 - 1993
Doctorates, Doctor of Philosophy, Materials Science, Engineering, Philosophy Indian Institute of Technology (Banaras Hindu University), Varanasi 1988 - 1988
Bachelors, Bachelor of Technology, Metallurgical Engineering
Skills:
Semiconductors
Semiconductor Industry
Product Management
Metrology
Product Marketing
Yield
Process Integration
Product Engineering
Design of Experiments
Ic
Silicon
Thin Films
Optics
Technical Marketing
Product Lifecycle Management
Cvd
Failure Analysis
Vasudev Venkatesan Photo 2

Vasudev Venkatesan

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Publications

Us Patents

Bipolar Transistor With Improved Reverse Breakdown Characteristics

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US Patent:
6383885, May 7, 2002
Filed:
Oct 27, 1999
Appl. No.:
09/427824
Inventors:
Vasudev Venkatesan - Chandler AZ
Patrice Parris - Phoenix AZ
Assignee:
Motorola, Inc. - Schumburg IL
International Classification:
H01L 218238
US Classification:
438309, 257565
Abstract:
A bipolar transistor ( ) in an IC includes a semiconductor wafer defining a collector area ( ) with a first conductivity type, a base area ( ) with a second conductivity type formed in the collector area ( ), and an emitter formed in the base area. A field oxide is positioned on the surface of the semiconductor wafer surrounding the emitter ( ) and substantially covering the base area ( ) and an implant of the second conductivity type is positioned in the base area ( ) between and spaced from the emitter ( ) and the outer periphery of the base area ( ). The implant further has a heavier concentration of the second conductivity type than the base area to compensate for loss of the second conductivity type under the field oxide and to separate the transistor current path from the breakdown path, which improves the collector to emitter breakdown voltage (BVCEO) while still maintaining a high beta.

Etch-Resistant Coating On Sensor Wafers For In-Situ Measurement

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US Patent:
20120074514, Mar 29, 2012
Filed:
Sep 28, 2010
Appl. No.:
12/892841
Inventors:
ANDREW NGUYEN - San Jose CA, US
FARHAT QULI - Hayward CA, US
MEI SUN - Los Altos CA, US
VASUDEV VENKATESAN - San Jose CA, US
Assignee:
KLA-Tencor Corporation - Milpitas CA
International Classification:
H01L 31/058
H01L 21/50
US Classification:
257467, 438 55, 257E21499, 257E31001
Abstract:
A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating.

Diamond-Based Chemical Sensors

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US Patent:
53629752, Nov 8, 1994
Filed:
Jul 8, 1993
Appl. No.:
8/089170
Inventors:
Jesko von Windheim - Raleigh NC
Vasudev Venkatesan - Phoenix AZ
Assignee:
Kobe Steel USA - Research Triangle Park NC
International Classification:
H01L 2966
US Classification:
257 76
Abstract:
A chemical sensor includes a diode or a transistor fabricated in diamond. A diamond-based diode chemical sensor includes a first diamond layer of first conductivity type and a second diamond or non-diamond layer of second conductivity type. A relatively highly doped region is formed in the first diamond layer, adjacent an electrical contact to reduce the frequency dependance of the sensor's capacitance/voltage characteristic. A diamond-based transistor sensor includes a controlling electrode such as a gate which is configured to allow a chemical external to the transistor to alter the characteristics of the transistor. Relatively highly doped regions are formed adjacent the transistor's controlling electrodes, such as the source and drain. A heater is thermally coupled to the sensor for heating the sensor to a predetermined operating temperature. A temperature monitor is also coupled to the sensor for monitoring the sensor temperature.

Latch Resistant Insulated Gate Semiconductor Device

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US Patent:
56545622, Aug 5, 1997
Filed:
Mar 3, 1995
Appl. No.:
8/398265
Inventors:
William L. Fragale - Scottsdale AZ
Paul J. Groenig - Chandler AZ
Vasudev Venkatesan - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 29749
US Classification:
257164
Abstract:
An insulated gate semiconductor device (10) is fabricated by providing at least one ballast resistor (40) having a sheet resistance of at least one square. The ballast resistor (40) is formed in the emitter region (17) between two adjacent portions of the base region (26) at the top surface of the semiconductor body in which the device (10) is fabricated. The ballast resistor (40) improves the latch resistance of the device (10) in overload conditions.
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Vasudev Venkatesan from San Jose, CA, age ~57 Get Report