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Udo C Pernisz

from Midland, MI
Age ~85
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Also known as:
Udo Perniss, Pernisz Udo
Phone and address:
406 Lingle Ln, Midland, MI 48640
(989) 832-7929
Related to:
Rosmarie C Perniss, 87Pamela M Pernisz, 50Janka H Perniss, 49Rosmari C Pernisz, 87Corvin Perniss, 44
Connected to:
Thessa S Pernitez, 71Beverly J Pernitzke, 71Joseph V Perno, 82Louise L Perno, 109Terri L Pernosky, 72Robert D Pernot, 84Clarica R Pernoud, 69Paula Perns, 55Brian G Pernula, 33Jonell M Pernula, 64

Udo Pernisz Phones & Addresses

  • 406 Lingle Ln, Midland, MI 48640 (989) 832-7929
  • Newark, DE
  • PO Box 2549, Midland, MI 48641

Work

Company: Michigan molecular institute Oct 2009 to Sep 2015 Position: Consultant

Education

School / High School: The University of Queensland 1974 to 1976 Specialities: Physics

Skills

Characterization • Photovoltaics • Materials Science • Physics • Thin Film Technology • Electronics • Laboratory • Experimental Physics • Technology Transfer • Optoelectronics • Mathematical Modeling • Ftir • Failure Analysis • R&D • Polymers • Innovation Management • Process Optimization • Spectroscopy • Coatings • Design of Experiments • Nanotechnology • Chemistry • Optics • Xps • Nanoparticles • Composites • Research and Development

Languages

English • German • French

Industries

Research

Resumes

Resumes

Udo Pernisz Photo 1

Owner

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Location:
Midland, MI
Industry:
Research
Work:
Michigan Molecular Institute Oct 2009 - Sep 2015
Consultant
Dow Corning Jul 2009 - Jun 2015
Scientist Emeritus
National Science Foundation Oct 2009 - Oct 2010
Expert, Condensed Matter Physics
Technoscience Consulting Oct 2009 - Oct 2010
Owner
Dow Corning Sep 12, 1983 - Apr 30, 2009
Research Scientist
Education:
The University of Queensland 1974 - 1976
University of Stuttgart 1959 - 1973
Doctorates, Doctor of Science, Doctor of Philosophy, Physics Technische Universität Berlin
Skills:
Characterization
Photovoltaics
Materials Science
Physics
Thin Film Technology
Electronics
Laboratory
Experimental Physics
Technology Transfer
Optoelectronics
Mathematical Modeling
Ftir
Failure Analysis
R&D
Polymers
Innovation Management
Process Optimization
Spectroscopy
Coatings
Design of Experiments
Nanotechnology
Chemistry
Optics
Xps
Nanoparticles
Composites
Research and Development
Languages:
English
German
French

Business Records

Name / Title
Company / Classification
Phones & Addresses
Udo Pernisz
Principal
Technoscience
Business Services at Non-Commercial Site
406 Lingle Ln, Midland, MI 48640

Publications

Us Patents

Modification Of Infrared Reflectivity Using Silicon Dioxide Thin Films Derived From Silsesquioxane Resins

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US Patent:
6572974, Jun 3, 2003
Filed:
Dec 6, 1999
Appl. No.:
09/455420
Inventors:
Mark Angelo Biscotte - Ann Arbor MI
Mark Monroe Banaszak Holl - Ann Arbor MI
Bradford Grant Orr - Ann Arbor MI
Udo C. Pernisz - Midland MI
Assignee:
The Regents of the University of Michigan - Ann Arbor MI
International Classification:
B32B 1504
US Classification:
428450, 428426, 428432, 428433, 428446, 428447, 428448, 428457, 428469, 428621, 428615, 428632, 428641, 428650, 428655, 428660, 428668, 428672, 428673, 428674, 428680, 428688, 428689, 428702, 427160, 4271631, 427164, 427165, 427166, 427167, 427168, 427169
Abstract:
Changes in the infrared reflection spectrum of a thin film of silica-like resinous material sandwiched between metal electrodes can be induced by applying an electric potential to a top electrode which is semitransparent. Characteristic infrared absorption lines change in proportion to a small electric current flowing through the material. These changes occur with response times of the order of seconds, and show time constants of the order of minutes to reach stationary values.

Impact Resistant Optical Waveguide And Method Of Manufacture Thereof

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US Patent:
7551830, Jun 23, 2009
Filed:
Dec 15, 2006
Appl. No.:
12/087433
Inventors:
Jon Degroot - Midland MI, US
Steven Evans - Freeland MI, US
Peter Lo - Midland MI, US
Udo Pernisz - Midland MI, US
Kai Su - Midland MI, US
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
G02B 6/00
US Classification:
385143, 385142
Abstract:
An impact resistant waveguide includes a clad surrounding a core. A reinforcing filler is incorporated in a curable silicone composition used to prepare the core, thereby imparting impact resistance to the core. A method of manufacture of the waveguide includes injecting the curable silicone composition into a clad made of silicone elastomeric tubing and thereafter curing the curable silicone composition.

Modification Of Infrared Reflectivity Using Silicon Dioxide Thin Films Derived From Silsesquixane Resins

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US Patent:
20030134136, Jul 17, 2003
Filed:
Jan 30, 2003
Appl. No.:
10/354289
Inventors:
Mark Biscotto - Ann Arbor MI, US
Mark Banaszak Holl - Ann Arbor MI, US
Bradford Orr - Ann Arbor MI, US
Udo Pernisz - Midland MI, US
Assignee:
The Regents of the University of Michigan - Ann Arbor MI
International Classification:
B32B009/00
US Classification:
428/472000, 428/209000, 428/336000
Abstract:
Changes in the infrared reflection spectrum of a thin film of silica-like resinous material sandwiched between metal electrodes can be induced by applying an electric potential to a top electrode which is semitransparent. Characteristic infrared absorption lines change in proportion to a small electric current flowing through the material. These changes occur with response times of the order of seconds, and show time constants of the order of minutes to reach stationary values.

Method Of Preparing A Metal-Silicone Rubber Composite

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US Patent:
20070003702, Jan 4, 2007
Filed:
Aug 26, 2004
Appl. No.:
10/573622
Inventors:
Fumito Nishida - Midland MI, US
Timothy Lauer - Freeland MI, US
Udo Pernisz - Midland MI, US
International Classification:
B05D 1/36
US Classification:
427402000, 427487000, 264259000
Abstract:
A method of preparing a metal-silicone rubber composite, the method comprising the steps of (i) depositing a layer of gold on a surface of a mold; (ii) depositing a primer layer of a metal on the layer of gold, wherein the metal is selected from aluminum, chromium, titanium, and copper, (iii) applying a radiation-curable silicone composition on the primer layer, (iv) curing the silicone composition with radiation to form a silicone rubber, and (v) removing the silicone rubber from the mold, whereby the layer of gold and the primer layer are transferred to the silicone rubber.

Method Of Metallizing A Silicone Rubber Substrate

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US Patent:
20070082133, Apr 12, 2007
Filed:
Aug 26, 2004
Appl. No.:
10/573623
Inventors:
Fumito Nishida - Midland MI, US
Timothy Lauer - Freeland MI, US
Udo Pernisz - Midland MI, US
International Classification:
B05D 3/00
US Classification:
427299000
Abstract:
A method of metallizing a silicone rubber substrate, the method comprising the steps of (i) depositing a primer layer of aluminum on a surface of a silicone rubber substrate, and (ii) depositing a layer of a ductile metal on the primer layer of aluminum, wherein the ductile metal is selected from gold, platinum, palladium, copper, silver, aluminum, and indium.

Electronic Article And Method Of Forming

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US Patent:
20130187185, Jul 25, 2013
Filed:
Sep 22, 2010
Appl. No.:
13/825514
Inventors:
David Deshazer - Bay City MI, US
Udo Pernisz - Midland MI, US
Ludmil Zambov - Midland MI, US
Assignee:
DOW CORNING CORPORATION - Midland MI
International Classification:
H01L 31/0232
H01L 33/58
US Classification:
257 98, 438 29, 438 69, 257432
Abstract:
An electronic article includes an optoelectronic semiconductor having a refractive index of 3.72 and a dielectric layer disposed on the optoelectronic semiconductor. The dielectric layer has a thickness of at least 50 μm and a refractive index of 1.40.1. The electronic article includes a gradient refractive index coating (GRIC) that is disposed on the optoelectronic semiconductor and that has a thickness of from 50 to 400 nm. The refractive index of the GRIC varies along the thickness from 2.70.7 to 1.50.1. The GRIC also includes a gradient of a carbide and an oxycarbide along the thickness. The carbide and the oxycarbide each independently include at least one silicon or germanium atom. The article is formed by continuously depositing the GRIC using plasma-enhanced chemical vapor deposition in a dual frequency configuration and subsequently disposing the dielectric layer on the GRIC.

Luminescent Ceramic Coating Compositions

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US Patent:
55412483, Jul 30, 1996
Filed:
Jun 2, 1995
Appl. No.:
8/459862
Inventors:
Loren A. Haluska - Midland MI
Keith W. Michael - Midland MI
Udo C. Pernisz - Midland MI
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
C08K 330
C08L 8305
US Classification:
524420
Abstract:
A coating composition comprising hydrogen silsesquioxane resin and a phosphor filler diluted in a solvent. These compositions are used to form luminescent coatings on substrates.

Photoluminescent Material From Hydrogen Silsesquioxane Resin

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US Patent:
60180021, Jan 25, 2000
Filed:
Feb 6, 1998
Appl. No.:
9/019603
Inventors:
Udo C. Pernisz - Midland MI
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
C04B 3556
B05D 302
US Classification:
5253265
Abstract:
A photoluminescent material is prepared by burning hydrogen silsesquioxane resin powder in a crucible in oxygen or ammonia atmosphere at a temperature above 400. degree. C. for about two hours. The photoluminescent material has a smooth compact surface surrounding a porous and loosely packed interior, the smooth compact surface exhibiting blue photoluminescence when irradiated with ultraviolet light, and the interior portion exhibits photoluminescence at longer wavelengths when irradiated under the same conditions with ultraviolet light.
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Udo C Pernisz from Midland, MI, age ~85 Get Report