Resumes
Resumes
Tom Dorsh Phones & Addresses
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14851 Hidden Hills Rd, McMinnville, OR 97128
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1901 Nobili Ave, Santa Clara, CA 95051
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3351 Alma St, Palo Alto, CA 94306
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Sunnyvale, CA
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Spokane Valley, WA
Publications
Us Patents
Plasma Activated Conformal Film Deposition
View pageUS Patent:
20110256726, Oct 20, 2011
Filed:
Apr 11, 2011
Appl. No.:
13/084399
Inventors:
Adrien LaVoie - Portland OR, US
Shankar Swaminathan - Hillsboro CA, US
Hu Kang - Tualatin OR, US
Ramesh Chandrasekharan - Portland OR, US
Tom Dorsh - McMinnville OR, US
Dennis M. Hausmann - Lake Oswego OR, US
Jon Henri - West Linn OR, US
Thomas Jewell - Wilsonville OR, US
Ming Li - West Linn OR, US
Bryan Schlief - Tualatin OR, US
Antonio Xavier - West Linn OR, US
Thomas W. Mountsier - San Jose CA, US
Bart J. van Schravendijk - Sunnyvale CA, US
Easwar Srinivasan - Beaverton OR, US
Mandyam Sriram - Beaverton OR, US
Shankar Swaminathan - Hillsboro CA, US
Hu Kang - Tualatin OR, US
Ramesh Chandrasekharan - Portland OR, US
Tom Dorsh - McMinnville OR, US
Dennis M. Hausmann - Lake Oswego OR, US
Jon Henri - West Linn OR, US
Thomas Jewell - Wilsonville OR, US
Ming Li - West Linn OR, US
Bryan Schlief - Tualatin OR, US
Antonio Xavier - West Linn OR, US
Thomas W. Mountsier - San Jose CA, US
Bart J. van Schravendijk - Sunnyvale CA, US
Easwar Srinivasan - Beaverton OR, US
Mandyam Sriram - Beaverton OR, US
International Classification:
H01L 21/311
H01L 21/31
H01L 21/306
C23F 1/02
B05C 5/00
B32B 38/08
H01L 21/31
H01L 21/306
C23F 1/02
B05C 5/00
B32B 38/08
US Classification:
438702, 118704, 1562755, 15634526, 438778, 257E2124, 257E21249
Abstract:
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
Pvd Deposition Process For Enhanced Properties Of Metal Films
View pageUS Patent:
7037830, May 2, 2006
Filed:
Sep 29, 2000
Appl. No.:
09/675627
Inventors:
Michael Rumer - Santa Clara CA, US
Jack Griswold - San Jose CA, US
Tom Dorsh - Santa Clara CA, US
Michael Kwok Leung Ng - Daly City CA, US
David E. Reedy - Fremont CA, US
Paul D. Healey - Newton MA, US
Michal Danek - Sunnyvale CA, US
Reed W. Rosenberg - Gilroy CA, US
Jack Griswold - San Jose CA, US
Tom Dorsh - Santa Clara CA, US
Michael Kwok Leung Ng - Daly City CA, US
David E. Reedy - Fremont CA, US
Paul D. Healey - Newton MA, US
Michal Danek - Sunnyvale CA, US
Reed W. Rosenberg - Gilroy CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/441
H01L 21/445
H01L 21/445
US Classification:
438656, 438683, 438688
Abstract:
A physical vapor deposition sputtering process for enhancing the preferred orientation of a titanium layer uses hydrogen before or during the deposition process. Using the oriented titanium layer as a base layer for a titanium, titanium nitride, aluminum interconnect stack results in formation of an aluminum layer with predominant crystallographic orientation which provides enhanced resistance to electromigration. In one process, a mixture of an inert gas, usually argon, and hydrogen is used as the sputtering gas for PVD deposition of titanium in place of pure argon. Alternatively, titanium is deposited in a two-step process in which an initial burst of hydrogen is introduced into the reaction chamber in a separate, first step. Pure argon is used as the sputtering gas for the titanium deposition in a second step. The method is broadly applicable to the deposition of metallization layers.
Plasma Activated Conformal Film Deposition
View pageUS Patent:
20140209562, Jul 31, 2014
Filed:
Mar 31, 2014
Appl. No.:
14/231554
Inventors:
- Fremont CA, US
Shankar Swaminathan - Beaverton OR, US
Hu Kang - Tualatin OR, US
Ramesh Chandrasekharan - Portland OR, US
Tom Dorsh - McMinnville OR, US
Dennis M. Hausmann - Lake Oswego OR, US
Jon Henri - West Linn OR, US
Thomas Jewell - Wilsonville OR, US
Ming Li - West Linn OR, US
Bryan Schlief - Tualatin OR, US
Antonio Xavier - West Linn OR, US
Thomas W. Mountsier - San Jose CA, US
Bart J. van Schravendijk - Cupertino CA, US
Easwar Srinivasan - Beaverton OR, US
Mandyam Sriram - Beaverton OR, US
Shankar Swaminathan - Beaverton OR, US
Hu Kang - Tualatin OR, US
Ramesh Chandrasekharan - Portland OR, US
Tom Dorsh - McMinnville OR, US
Dennis M. Hausmann - Lake Oswego OR, US
Jon Henri - West Linn OR, US
Thomas Jewell - Wilsonville OR, US
Ming Li - West Linn OR, US
Bryan Schlief - Tualatin OR, US
Antonio Xavier - West Linn OR, US
Thomas W. Mountsier - San Jose CA, US
Bart J. van Schravendijk - Cupertino CA, US
Easwar Srinivasan - Beaverton OR, US
Mandyam Sriram - Beaverton OR, US
Assignee:
Novellus Systems, Inc. - Fremont CA
International Classification:
H01L 21/02
C23C 16/04
C23C 16/455
C23C 16/04
C23C 16/455
US Classification:
216 2, 427569, 118697
Abstract:
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.