Search

Tillmann Kubis

from West Lafayette, IN
Get Report
Also known as:
Tillman Kubis
Phone and address:
3229 Edgerton St, Lafayette, IN 47906
(765) 743-3570
Related to:
Gertraud Kubis
Connected to:
Deborah A Kubis, 73Jan Kubis, 71Jessica Kubis, 38Patrick M Kubis, 57Hannah Kubisak, 32James R Kubishak, 53Michael Kubishen, 111Julie A Kubisiak, 69Mark A Kubisiak, 68Mark Kubisky, 59

Tillmann Kubis Phones & Addresses

  • 3229 Edgerton St, W Lafayette, IN 47906 (765) 743-3570
  • 400 River Rd, West Lafayette, IN 47906 (765) 743-3570
  • W Lafayette, IN

Work

Company: Purdue university Feb 2010 Position: Postdoc

Education

Degree: Dr. rer. nat. School / High School: Technische Universität München 2004 to 2009 Specialities: Physik

Skills

Nanotechnology • Physics • Simulations • Semiconductors • Numerical Analysis • Materials Science • Nanomaterials • Fortran • Thin Films • Scientific Computing • Optoelectronics • Mathematical Modeling • C++

Languages

German • English

Interests

Astronomie • Degenfechten • Bienenzucht

Industries

Higher Education

Resumes

Resumes

Tillmann Kubis Photo 1

Research Assistant Public Relations

View page
Location:
Lafayette, IN
Industry:
Higher Education
Work:
Purdue University since Feb 2010
Postdoc
Walter Schottky Institute, Technische Universitat Munchen Feb 2004 - Dec 2009
Dr. rer. nat.
Technische Universität München Feb 2004 - Dec 2009
wissenschaftlicher Angestellter
Education:
Technische Universität München 2004 - 2009
Dr. rer. nat., Physik
Skills:
Nanotechnology
Physics
Simulations
Semiconductors
Numerical Analysis
Materials Science
Nanomaterials
Fortran
Thin Films
Scientific Computing
Optoelectronics
Mathematical Modeling
C++
Interests:
Astronomie
Degenfechten
Bienenzucht
Languages:
German
English

Publications

Us Patents

Light Emitting Device And Method Of Making The Same

View page
US Patent:
20210057606, Feb 25, 2021
Filed:
May 1, 2020
Appl. No.:
16/865205
Inventors:
- West Lafauette IN, US
Tillmann Kubis - West Lafayette IN, US
Assignee:
Purdue Research Foundation - West Lafayette IN
International Classification:
H01L 33/06
H01L 33/38
H01L 27/15
H01L 33/44
Abstract:
A light emitting device includes a first light emitting diode (LED). The first LED includes a first metallic layer. The first LED additionally includes a p-doped semiconductor layer over the first metallic layer. Additionally, the first LED includes a multi quantum well (MQW) semiconductor layer over the p-doped semiconductor layer. Moreover, the first LED includes an n-doped semiconductor layer over the MQW semiconductor layer. Next, the first LED includes a second metallic layer over the n-doped semiconductor layer. The light emitting device also includes a second LED over the first LED. Further, the light emitting device includes a third LED over the second LED.

Semiconductor Device And Method Of Making The Same

View page
US Patent:
20200203572, Jun 25, 2020
Filed:
Dec 18, 2019
Appl. No.:
16/718482
Inventors:
- West Lafayette IN, US
Tillmann Christoph Kubis - West Lafayette IN, US
Assignee:
Purdue Research Foundation - West Lafayette IN
International Classification:
H01L 33/32
H01L 33/06
H01L 33/40
Abstract:
A light emitting diode (LED) including a first contact. The LED further includes a first semiconductor layer over the first contact. The first semiconductor layer comprises hexagonal Boron Nitride. Additionally, the LED includes a second semiconductor layer over the first semiconductor layer. The second semiconductor layer comprises at least one hexagonal Boron Nitride quantum well and at least one hexagonal Boron Nitride quantum barrier. Moreover, the LED includes a third semiconductor layer over the second semiconductor layer. The third semiconductor layer comprises hexagonal Boron Nitride. Further, the LED includes a second contact over the third semiconductor layer.

Physical Modeling Of Electronic Devices/Systems

View page
US Patent:
20180373826, Dec 27, 2018
Filed:
Aug 28, 2018
Appl. No.:
16/115459
Inventors:
- West Lafayette IN, US
Mykhailo Povolotskyi - West Lafayette IN, US
Tillmann C Kubis - West Lafayette IN, US
Ganesh Hegde - Austin TX, US
Assignee:
Purdue Research Foundation - West Lafayette IN
International Classification:
G06F 17/50
Abstract:
A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model

Method And System For Realistic And Efficient Simulation Of Light Emitting Diodes Having Multi-Quantum-Wells

View page
US Patent:
20180336302, Nov 22, 2018
Filed:
May 22, 2018
Appl. No.:
15/986337
Inventors:
- West Lafayette IN, US
Tillmann Kubis - West Lafayette IN, US
Junzhe Geng - West Lafayette IN, US
International Classification:
G06F 17/50
H01L 33/00
Abstract:
The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.

System And Methods Of Processing Liquid Therein

View page
US Patent:
20180290106, Oct 11, 2018
Filed:
Apr 3, 2018
Appl. No.:
15/944776
Inventors:
- West Lafayette IN, US
Tillmann C. Kubis - West Lafayette IN, US
Assignee:
Purdue Research Foundation - West Lafayette IN
International Classification:
B01D 61/42
B01D 71/02
B01D 69/06
Abstract:
A system includes a plurality of nanoporous filtering media, wherein each nanoporous filtering media of the plurality of nanoporous filtering media includes a plurality of nanopores, wherein the plurality of nanoporous filtering media are stacked over each other. The system further includes a voltage source connected to a nanoporous filtering media of the plurality of nanoporous filtering media, wherein the voltage source is configured to provide a voltage to the nanoporous filtering media of the plurality of nanoporous media, wherein the voltage source is configured to establish an electrostatic charge within a circumference of each nanopore of the plurality of nanopores of the nanoporous filtering media.

Physical Modeling Of Electronic Devices/Systems

View page
US Patent:
20180121583, May 3, 2018
Filed:
Dec 31, 2017
Appl. No.:
15/859610
Inventors:
- West Lafayette IN, US
Mykhailo Povolotskyi - West Lafayette IN, US
Tillmann C. Kubis - West Lafayette IN, US
Ganesh Hegde - Austin TX, US
Assignee:
Purdue Research Foundation - West Lafayette IN
International Classification:
G06F 17/50
Abstract:
A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model

Physical Modeling Of Electronic Devices/Systems

View page
US Patent:
20150120259, Apr 30, 2015
Filed:
Oct 24, 2014
Appl. No.:
14/523135
Inventors:
- West Lafayette IN, US
Mykhailo Povolotskyi - Lafayette IN, US
Tillmann Christoph Kubis - Lafayette IN, US
Ganesh Hegde - Austin TX, US
International Classification:
G06F 17/50
US Classification:
703 2
Abstract:
A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.
Control profile
Tillmann Kubis from West Lafayette, IN Get Report