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Stephen Biellak Phones & Addresses

  • Cupertino, CA
  • 1672 Lachine Dr, Sunnyvale, CA 94087 (408) 733-7966
  • 388 Waverly St, Sunnyvale, CA 94086 (408) 733-7966
  • Palo Alto, CA
  • Mountain View, CA
  • Santa Clara, CA
  • 388 Waverly St, Sunnyvale, CA 94086 (408) 568-2900

Work

Position: Executive, Administrative, and Managerial Occupations

Education

Degree: Bachelor's degree or higher

Emails

s***k@worldnet.att.net

Publications

Us Patents

Systems And Methods For Determining A Characteristic Of A Specimen

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US Patent:
7463349, Dec 9, 2008
Filed:
Jun 2, 2006
Appl. No.:
11/421929
Inventors:
Stephen Biellak - Sunnyvale CA, US
David Shortt - Milpitas CA, US
Assignee:
KLA-Tencor Technologies Corp. - Milpitas CA
International Classification:
G01N 21/00
US Classification:
3562372, 3562375
Abstract:
Systems and methods for determining a characteristic of a specimen are provided. One system includes an illumination subsystem configured to direct light to a first set of spots on the specimen at a normal angle of incidence and to simultaneously direct light to a second set of spots on the specimen at an oblique angle of incidence. The system also includes a detection subsystem configured to detect light scattered from the first and second sets of spots simultaneously and to generate first output responsive to the light scattered from the first set of spots and second output responsive to the light scattered from the second set of spots. The first and second outputs can be used to determine the characteristic of the specimen.

Enhanced Simultaneous Multi-Spot Inspection And Imaging

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US Patent:
7489393, Feb 10, 2009
Filed:
Mar 2, 2005
Appl. No.:
11/071072
Inventors:
Stephen Biellak - Sunnyvale CA, US
David Shortt - Milpitas CA, US
Assignee:
KLA-Tencor Technologies Corporation - Milpitas CA
International Classification:
G01N 21/00
US Classification:
3562372, 3562374
Abstract:
A system and method for inspection is disclosed. The design includes focusing illumination beams of radiation at an optical axis to an array of illuminated elongated spots on the surface at oblique angle(s) of incidence to the surface, performing a linear scan along a linear axis, wherein the linear axis is offset from the optical axis by a not insubstantial angular quantity, and imaging scattered radiation from the spots onto an array of receivers so that each receiver in the array receives scattered radiation from a corresponding spot in the array of spots.

Methods And Systems For Inspection Of A Wafer

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US Patent:
7554656, Jun 30, 2009
Filed:
Oct 6, 2005
Appl. No.:
11/244451
Inventors:
David Shortt - Milpitas CA, US
Stephen Biellak - Sunnyvale CA, US
Alexander Belyaev - Mountain View CA, US
Assignee:
KLA-Tencor Technologies Corp. - Milpitas CA
International Classification:
G01N 21/00
US Classification:
3562375, 3562372
Abstract:
Methods and systems for inspection of a wafer are provided. One method includes illuminating the wafer with light at a first wavelength that penetrates into the wafer and light at a second wafer that does not substantially penetrate into the wafer. The method also includes generating output signals responsive to light from the wafer resulting from the illuminating step. In addition, the method includes detecting defects on the wafer using the output signals. The method further includes determining if the defects are subsurface defects or surface defects using the output signals.

Systems And Methods For Inspecting Wafers

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US Patent:
7623229, Nov 24, 2009
Filed:
Oct 7, 2008
Appl. No.:
12/246622
Inventors:
Mehdi Vaez-Iravani - Los Gatos CA, US
Stephen Biellak - Sunnyvale CA, US
Assignee:
KLA-Tencor Corporation - San Jose CA
International Classification:
G01N 21/88
US Classification:
3562375, 3562374, 356394
Abstract:
Systems and methods for inspecting wafers are provided. One system includes a detection subsystem configured to separately and simultaneously detect light scattered from different portions of a single spot obliquely, or normally, illuminated on a wafer and to separately generate output responsive to the separately detected light that can be used to detect defects on the wafer. The system can, therefore, effectively perform a multi-spot type of inspection of the wafer using only a single obliquely or normally illuminated spot on the wafer.

Systems Configured To Inspect A Wafer

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US Patent:
7746459, Jun 29, 2010
Filed:
Aug 10, 2007
Appl. No.:
11/837220
Inventors:
Azmi Kadkly - Cupertino CA, US
Stephen Biellak - Sunnyvale CA, US
Mehdi Vaez-Iravani - Los Gatos CA, US
Assignee:
KLA-Tencor Technologies Corp. - Milpitas CA
International Classification:
G01N 21/00
US Classification:
3562372, 3562374
Abstract:
Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to illuminate an area on the wafer by directing light to the wafer at an oblique angle of incidence. The system also includes a collection subsystem configured to simultaneously collect light scattered from different spots within the illuminated area and to focus the light collected from the different spots to corresponding positions in an image plane. In addition, the system includes a detection subsystem configured to separately detect the light focused to the corresponding positions in the image plane and to separately generate output responsive to the light focused to the corresponding positions in the image plane. The output can be used to detect defects on the wafer.

Defect Detection

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US Patent:
7796805, Sep 14, 2010
Filed:
Sep 26, 2005
Appl. No.:
11/234974
Inventors:
Michael D. Kirk - Los Altos CA, US
Stephen A. Biellak - Sunnyvale CA, US
David W. Shortt - Milpitas CA, US
Assignee:
KLA-Tencor Corporation - Milpitas CA
International Classification:
G06K 9/00
US Classification:
382149, 382100, 382141, 382145, 3562372, 3562373, 3562375
Abstract:
A wafer having improved inspection sensitivity to foreign matter on a top-most surface of the wafer, as detected with a surface scanning optical inspection system that uses an inspection wavelength. The wafer includes a substantially homogenous first layer at the top-most surface of the wafer, the first layer having a first thickness. The first layer is at least partially transparent to the inspection wavelength. A substantially homogenous second layer immediately underlies the first layer, the second layer having a second thickness. The second layer is at least partially transparent to the inspection wavelength. A substrate immediately underlies the second layer. The first thickness and the second thickness are set in a combination that produces a local minimum of an electric field at the top-most surface and a local maximum of an electric field within one hundred nanometers above the top-most surface.

Systems And Methods For Determining Two Or More Characteristics Of A Wafer

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US Patent:
7912658, Mar 22, 2011
Filed:
May 28, 2008
Appl. No.:
12/128426
Inventors:
Stephen Biellak - Sunnyvale CA, US
Daniel Kavaldjiev - San Jose CA, US
Assignee:
KLA-Tencor Corp. - San Jose CA
International Classification:
G06F 19/00
US Classification:
702 40, 3562375
Abstract:
Systems and methods for determining two or more characteristics of a wafer are provided. The two or more characteristics include a characteristic of the wafer that is spatially localized in at least one dimension and a characteristic of the wafer that is not spatially localized in two dimensions.

Segmented Polarizer For Optimizing Performance Of A Surface Inspection System

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US Patent:
8169613, May 1, 2012
Filed:
Nov 13, 2009
Appl. No.:
12/618620
Inventors:
Stephen Biellak - Sunnyvale CA, US
Daniel Kavaldjiev - San Jose CA, US
Assignee:
KLA-Tencor Corp. - San Jose CA
International Classification:
G01J 4/00
US Classification:
356369, 3562372, 3562375
Abstract:
A polarizing device may be used with sample inspection system having one or more collection systems that receive scattered radiation from a region on a sample surface and direct it to a detector. The polarizing device disposed between the collection system(s) and the detector. The polarizing device may include a plurality of polarizing sections. The sections may be characterized by different polarization characteristics. The polarizing device is configured to transmit scattered radiation from defects to the detector and to block noise from background sources that do not share characteristics with scattered radiation from the defects from reaching the detector while, maximizing a capture rate for the defects the detector at a less than optimal signal-to-noise ratio.
Stephen A Biellak from Cupertino, CA, age ~57 Get Report