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Siamak S Salimian

from Los Altos, CA
Age ~70

Siamak Salimian Phones & Addresses

  • 594 Pinecrest Dr, Los Altos, CA 94024
  • Los Altos Hills, CA
  • 2351 Oberlin St, Palo Alto, CA 94306 (650) 561-4193
  • Cupertino, CA
  • 958 Gerber Ct, Sunnyvale, CA 94087 (408) 733-9307
  • Mountain View, CA
  • Menlo Park, CA
  • Santa Clara, CA

Publications

Us Patents

Correction Of Wafer Temperature Drift In A Plasma Reactor Based Upon Continuous Wafer Temperature Measurements Using And In-Situ Wafer Temperature Optical Probe

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US Patent:
6353210, Mar 5, 2002
Filed:
Apr 11, 2000
Appl. No.:
09/547359
Inventors:
Mike Welch - Livermore CA
Paul Luscher - Sunnyvale CA
Siamak Salimian - Sunnyvale CA
Brad Mays - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H05B 100
US Classification:
219497, 219390, 2194441, 21912143, 392416
Abstract:
The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an âexternalâ optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or âpuckâ temperature. These data bases are then employed during processing of a production wafer to control coolant pressure in such a manner as to minimize wafer temperature deviation from the desired temperature.

Electrostatic Or Mechanical Chuck Assembly Conferring Improved Temperature Uniformity Onto Workpieces Held Thereby, Workpiece Processing Technology And/Or Apparatus Containing The Same, And Method(S) For Holding And/Or Processing A Workpiece With The Same

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US Patent:
6373679, Apr 16, 2002
Filed:
Jul 2, 1999
Appl. No.:
09/347437
Inventors:
Jianmin Qiao - Fremont CA
James E. Nulty - San Jose CA
Paul Arleo - San Francisco CA
Siamak Salimian - Sunnyvale CA
Assignee:
Cypress Semiconductor Corp. - San Jose CA
International Classification:
H02N 1300
US Classification:
361230, 361233
Abstract:
An electrostatic or mechanical chuck assembly includes gas inlets only in an annulus-shaped peripheral portion and not in the central region of the chuck. The gas inlets are in fluid communication with one or more gas conduits and supply of the backside of a workpiece, such as a semiconductor wafer, with inert coolant gas or gases. The gas or gases supplied only to the peripheral region of the chuck effectively cool the central region of the chuck by at least two physical mechanisms, including the thermal conduction through the workpiece and diffusion of the gas or gases in the interstitial space(s) between the somewhat irregular facing surfaces of the chuck and of the backside of the workpiece.

Plasma Reactor Cooled Ceiling With An Array Of Thermally Isolated Plasma Heated Mini-Gas Distribution Plates

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US Patent:
6432259, Aug 13, 2002
Filed:
Dec 14, 1999
Appl. No.:
09/461682
Inventors:
Hamid Noorbakhsh - Fremont CA
Michael Welch - Livermore CA
Siamak Salimian - Sunnyvale CA
Paul Luscher - Sunnyvale CA
Hongching Shan - San Jose CA
Kaushik Vaidya - Sunnyvale CA
Jim Carducci - Sunnyvale CA
Evans Lee - Milpitas CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05H 100
US Classification:
15634533, 15634534, 15634544, 118724, 118723 E
Abstract:
A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.

Correction Of Wafer Temperature Drift In A Plasma Reactor Based Upon Continuous Wafer Temperature Measurements Using An In-Situ Wafer Temperature Optical Probe

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US Patent:
6575622, Jun 10, 2003
Filed:
Dec 7, 2001
Appl. No.:
10/013183
Inventors:
Mike Welch - Livermore CA
Paul Luscher - Sunnyvale CA
Siamak Salimian - Sunnyvale CA
Brad Mays - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
G01K 114
US Classification:
374141, 374131, 374 66, 219497
Abstract:
The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an âexternalâ optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or âpuckâ temperature. These data bases are then employed during processing of a production wafer to control coolant pressure in such a manner as to minimize wafer temperature deviation from the desired temperature.

Double Slit-Valve Doors For Plasma Processing

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US Patent:
6647918, Nov 18, 2003
Filed:
Nov 13, 2000
Appl. No.:
09/711191
Inventors:
Michael D. Welch - Livermore CA
Paul E. Luscher - Sunnyvale CA
Evans Y. Lee - Milpitas CA
James D. Carducci - Sunnyvale CA
Siamak Salimian - Sunnyvale CA
Assignee:
Applied Materials, Inc - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118723R, 118715, 118723 E, 118733, 15634531, 15634532, 15634543, 156916
Abstract:
In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

Dielectric Etch Chamber With Expanded Process Window

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US Patent:
6716302, Apr 6, 2004
Filed:
Sep 24, 2002
Appl. No.:
10/253496
Inventors:
James D Carducci - Sunnyvale CA
Hamid Noorbakhsh - Fremont CA
Evans Y Lee - Milpitas CA
Bryan Y Pu - San Jose CA
Hongching Shan - Cupertino CA
Claes Bjorkman - Mountain View CA
Siamak Salimian - Sunnyvale CA
Paul E Luscher - Sunnyvale CA
Michael D Welch - Pleasanton CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H05H 100
US Classification:
15634547, 15634529, 118723 E, 118715, 438710, 216 67
Abstract:
A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

Magnetic Barrier For Plasma In Chamber Exhaust

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US Patent:
6773544, Aug 10, 2004
Filed:
Jan 31, 2001
Appl. No.:
09/775173
Inventors:
James D. Carducci - Sunnyvale CA, 94086
Hamid Noorbakhsh - Fremont CA, 94539
Evans Y. Lee - Milpitas CA, 95035
Hongqing Shan - Cupertino CA, 95014
Siamak Salimian - Sunnyvale CA, 94087
Paul E. Luscher - Sunnyvale CA, 94087
Michael D. Welch - Pleasanton CA, 94566
International Classification:
H01L 21302
US Classification:
1563451, 15634529, 15634539, 15634542, 15634546, 15634549, 118723 E
Abstract:
The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.

Dielectric Etch Chamber With Expanded Process Window

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US Patent:
6797639, Sep 28, 2004
Filed:
Sep 24, 2002
Appl. No.:
10/254969
Inventors:
James D Carducci - Sunnyvale CA
Hamid Noorbakhsh - Fremont CA
Evans Y Lee - Milpitas CA
Bryan Y Pu - San Jose CA
Hongching Shan - Cupertino CA
Claes Bjorkman - Mountain View CA
Siamak Salimian - Sunnyvale CA
Paul E Luscher - Sunnyvale CA
Michael D Welch - Pleasanton CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 2100
US Classification:
438710, 216 67, 15634547, 15634529, 118723 E, 118715
Abstract:
A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
Siamak S Salimian from Los Altos, CA, age ~70 Get Report